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公开(公告)号:CH708791A8
公开(公告)日:2015-06-30
申请号:CH16062014
申请日:2014-10-20
Applicant: GEN ELECTRIC
Inventor: WANG LIMIN , ZHONG DALONG , ZHOU HONG , KOOL LAWRENCE BERNARD , ZHANG LIMING , THOMPSON CHRISTOPHER EDWARD
Abstract: Eine Gasturbinenkomponente (100) enthält ein Substrat (102), das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht (106). Die korrosionsbeständige Schicht (106) ist inert für geschmolzene Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel M x V y O z , worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z=x+2,5y oder z=1,5x+2,5y oder z=2x+2,5y ist.
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公开(公告)号:AU2011226902A1
公开(公告)日:2012-04-19
申请号:AU2011226902
申请日:2011-09-27
Applicant: GEN ELECTRIC
Inventor: ZHONG DALONG , PARTHASARATHY GAUTAM , NARDI JR RICHARD ARTHUR
Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a method to make a film. The method includes 5 providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the pulsed direct current plasma to eject a material comprising cadmium and sulfur into the plasma; and depositing a film comprising the material onto a substrate. The target includes a semiconductor material that comprises semiconductor 0 material comprises cadmium and sulfur. CdS ------ CdS:O (20%) ........-. CdS:O (20%) - Annealed --- CdS:O (10%) - CdS:O (10%) - Annealed - 0.6 c 0.5 300 350 400 450 500 550 600 650 700 750 800 850 900 Wavelength (nm) y 200 nm Microcrystalline Amorphous
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公开(公告)号:AU2010201233A1
公开(公告)日:2010-10-14
申请号:AU2010201233
申请日:2010-03-26
Applicant: GEN ELECTRIC
Inventor: KOREVAAR BASTIAAN ARIE , JOHNSON JAMES NEIL , ZHONG DALONG , XI YANGANG ANDREW , AHMAD FAISAL RAZI
IPC: H01L31/0248
Abstract: A photovoltaic device 100 is provided comprising an absorber layer 416, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer 416 comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains 412 has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains 412 and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer 416 is also disclosed.
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公开(公告)号:DE102012100259A1
公开(公告)日:2012-07-19
申请号:DE102012100259
申请日:2012-01-12
Applicant: GEN ELECTRIC
Inventor: ZHONG DALONG , NARDI RICHARD ARTHUR JR , PARTHASARATHY GAUTAM
Abstract: Ein Aspekt der vorliegenden Erfindung stellt ein Verfahren zum Herstellen eines Filmes bereit. Das Verfahren schließt das Bereitstellen eines ein Sulfid umfassenden Targets in einer sauerstofffreien Umgebung, das Anwenden einer Vielzahl von Gleichstromimpulsen auf das Target zum Erzeugen eines impulsförmigen Gleichstromplasmas, das Zerstäuben des Sulfidtargets mit dem impulsförmigen DC-Plasma zum Auswerfen eines Schwefel umfassenden Materials in das Plasma und das Abscheiden eines das ausgeworfene Material umfassenden Films auf einem Träger ein. Ein anderer Aspekt der vorliegenden Erfindung umfasst ein Verfahren zum Herstellen einer photovoltaischen Vorrichtung.
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公开(公告)号:DE102008002840A1
公开(公告)日:2008-11-13
申请号:DE102008002840
申请日:2008-05-05
Applicant: GEN ELECTRIC
Inventor: QIU LIANGHENG , ROGERS CAREY S , PETERSON MYLES STANDISH , ZHONG DALONG
Abstract: A bearing assembly mounted in an x-ray tube includes a bearing race and a plurality of bearing balls positioned adjacent to the bearing race. The plurality of bearing balls are positioned within a bearing cage. The bearing cage is configured to evenly space the bearing balls within the bearing cage and prevent contact between adjacent bearing balls, thereby eliminating the problems of skidding wear and dynamic impact load between adjacent bearing balls in the bearing assembly.
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公开(公告)号:DE102014115032A1
公开(公告)日:2015-04-30
申请号:DE102014115032
申请日:2014-10-16
Applicant: GEN ELECTRIC
Inventor: WANG LIMIN , ZHOU HONG , ZHANG LIMING , ZHONG DALONG , KOOL LAWRENCE BERNARD , THOMPSON CHRISTOPHER EDWARD
IPC: C23F11/12
Abstract: Eine Gasturbinenkomponente enthält ein Substrat, das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht. Die korrosionsbeständige Schicht ist inert für die geschmolzenen Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel MxVyOz, worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z = x + 2,5y oder z = 1,5x + 2,5y oder z = 2x + 2,5y ist.
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公开(公告)号:AU2011226881A1
公开(公告)日:2012-04-19
申请号:AU2011226881
申请日:2011-09-26
Applicant: GEN ELECTRIC
Inventor: ZHONG DALONG , PARTHASARATHY GAUTAM , NARDI JR RICHARD ARTHUR
IPC: H01L31/02 , H01L31/0272 , H01L31/18
Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device. Placing a substrate/superstrate in the deposition environment 12 Placing a target within an environment of oxygen 14 Applying a plurality of direct current pulses to the target 16 to obtain a pulsed direct current plasma Sputtering the target with the a pulsed direct current plasma 18 to eject a material comprising cadmium and sulfur into the plasma Depositing a film of the material comprising cadmium 20 and sulfur on to the substrate/superstrate
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公开(公告)号:CA2680495A1
公开(公告)日:2010-04-03
申请号:CA2680495
申请日:2009-09-24
Applicant: GEN ELECTRIC
Inventor: VARANASI KRIPA KIRAN , BHATE NITIN , CARROLL MICHAEL DAVID , GHASRIPOOR FARSHAD , KULKARNI AMBARISH JAYANT , ROSENZWEIG LARRY STEVEN , SCHELL JERRY DONALD , ZHONG DALONG
Abstract: A turbine engine component (10) includes at least one treated surface (14) wherein the treated surface has a surface roughness (Ra) of less than 12 microinches; and a hard coating (16) disposed on the treated surface, wherein the hard coating (16) is a nitride and/or a carbide material at a thickness of less than 50 microns formed using electron beam physical vapor deposition, cathodic arc evaporation, or magnetron sputtering. Also disclosed are methods for substantially preventing micropitting on a surface of a turbine engine component (10).
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公开(公告)号:MY166589A
公开(公告)日:2018-07-17
申请号:MYPI2014001824
申请日:2012-12-14
Applicant: GEN ELECTRIC
Inventor: CAO JINBO , ROJO JUAN CARLOS , DALAKOS GEORGE THEODORE , YAKIMOV AHARON , ZHONG DALONG , KOREVAAR BASTIAAN ARIE , FELDMAN-PEABODY SCOOT D
IPC: H01L31/0296 , H01L21/477 , H01L31/0392 , H01L31/18
Abstract: A METHOD OF MANUFACTURING SEMICONDUCTOR ASSEMBLIES IS PROVIDED. THE MANUFACTURING METHOD INCLUDES THERMALLY PROCESSING A FIRST SEMICONDUCTOR ASSEMBLY (100) COMPRISING A FIRST SEMICONDUCTOR LAYER (110) DISPOSED ON A FIRST SUPPORT (120) AND THERMALLY PROCESSING A SECOND SEMICONDUCTOR ASSEMBLY (200) COMPRISING A SECOND SEMICONDUCTOR LAYER (210) DISPOSED ON A SECOND SUPPORT (220). THE FIRST AND SECOND SEMICONDUCTOR ASSEMBLIES (100, 200) ARE THERMALLY PROCESSED SIMULTANEOUSLY, AND THE FIRST AND SECOND SEMICONDUCTOR ASSEMBLIES (100, 200) ARE ARRANGED SUCH THAT THE FIRST SEMICONDUCTOR LAYER (110) FACES THE SECOND SEMICONDUCTOR LAYER (210) DURING THE THERMAL PROCESSING. THE MOST SUITABLE DRAWING:
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公开(公告)号:CH708791A2
公开(公告)日:2015-04-30
申请号:CH16062014
申请日:2014-10-20
Applicant: GEN ELECTRIC
Inventor: WANG LIMIN , ZHONG DALONG , ZHOU HONG , KOOL LAUWRENCE BERNARD , ZHANG LIMING , THOMPSON CHRISTOPHER EDWARD
Abstract: Eine Gasturbinenkomponente (100) enthält ein Substrat (102), das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht (106). Die korrosionsbeständige Schicht (106) ist inert für geschmolzene Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel M x V y O z , worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z=x+2,5y oder z=1,5x+2,5y oder z=2x+2,5y ist.
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