Photovoltaic device and method for making

    公开(公告)号:AU2011226902A1

    公开(公告)日:2012-04-19

    申请号:AU2011226902

    申请日:2011-09-27

    Applicant: GEN ELECTRIC

    Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a method to make a film. The method includes 5 providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the pulsed direct current plasma to eject a material comprising cadmium and sulfur into the plasma; and depositing a film comprising the material onto a substrate. The target includes a semiconductor material that comprises semiconductor 0 material comprises cadmium and sulfur. CdS ------ CdS:O (20%) ........-. CdS:O (20%) - Annealed --- CdS:O (10%) - CdS:O (10%) - Annealed - 0.6 c 0.5 300 350 400 450 500 550 600 650 700 750 800 850 900 Wavelength (nm) y 200 nm Microcrystalline Amorphous

    Layer for thin film photovoltaics and a solar cell made therefrom

    公开(公告)号:AU2010201233A1

    公开(公告)日:2010-10-14

    申请号:AU2010201233

    申请日:2010-03-26

    Applicant: GEN ELECTRIC

    Abstract: A photovoltaic device 100 is provided comprising an absorber layer 416, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer 416 comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains 412 has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains 412 and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer 416 is also disclosed.

    Verfahren zum Erzeugen eines halbleitenden Films und Photovoltaikvorrichtung

    公开(公告)号:DE102012100259A1

    公开(公告)日:2012-07-19

    申请号:DE102012100259

    申请日:2012-01-12

    Applicant: GEN ELECTRIC

    Abstract: Ein Aspekt der vorliegenden Erfindung stellt ein Verfahren zum Herstellen eines Filmes bereit. Das Verfahren schließt das Bereitstellen eines ein Sulfid umfassenden Targets in einer sauerstofffreien Umgebung, das Anwenden einer Vielzahl von Gleichstromimpulsen auf das Target zum Erzeugen eines impulsförmigen Gleichstromplasmas, das Zerstäuben des Sulfidtargets mit dem impulsförmigen DC-Plasma zum Auswerfen eines Schwefel umfassenden Materials in das Plasma und das Abscheiden eines das ausgeworfene Material umfassenden Films auf einem Träger ein. Ein anderer Aspekt der vorliegenden Erfindung umfasst ein Verfahren zum Herstellen einer photovoltaischen Vorrichtung.

    5.
    发明专利
    未知

    公开(公告)号:DE102008002840A1

    公开(公告)日:2008-11-13

    申请号:DE102008002840

    申请日:2008-05-05

    Applicant: GEN ELECTRIC

    Abstract: A bearing assembly mounted in an x-ray tube includes a bearing race and a plurality of bearing balls positioned adjacent to the bearing race. The plurality of bearing balls are positioned within a bearing cage. The bearing cage is configured to evenly space the bearing balls within the bearing cage and prevent contact between adjacent bearing balls, thereby eliminating the problems of skidding wear and dynamic impact load between adjacent bearing balls in the bearing assembly.

    Photovoltaic device and method for making

    公开(公告)号:AU2011226881A1

    公开(公告)日:2012-04-19

    申请号:AU2011226881

    申请日:2011-09-26

    Applicant: GEN ELECTRIC

    Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device. Placing a substrate/superstrate in the deposition environment 12 Placing a target within an environment of oxygen 14 Applying a plurality of direct current pulses to the target 16 to obtain a pulsed direct current plasma Sputtering the target with the a pulsed direct current plasma 18 to eject a material comprising cadmium and sulfur into the plasma Depositing a film of the material comprising cadmium 20 and sulfur on to the substrate/superstrate

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