公开(公告)号：AU2013216698A1

公开(公告)日：2014-03-20

申请号：AU2013216698

申请日：2013-08-19

Applicant: GEN ELECTRIC

Inventor： FOUST DONALD FRANKLIN ,  CAO HONGBO ,  CLARK LAURA ANNE ,  GARBER ROBERT ANDREW ,  FELDMAN-PEABODY SCOTT DANIEL ,  METZGER WYATT KEITH ,  SHAN YINGHUI ,  SHUBA ROMAN

IPC: H01L31/04 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/0336

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Forming a chalcogen-rich region by contacting at least a portion of the semiconductor material with a chemical agent, 31 wherein the chemical agent comprises iodine Introducing a dopant into the chalcogen-rich region ~32 Contacting at least a portion of the semiconductor material 41 with a chemical agent, wherein the chemical agent comprises iodine Contacting at least a portion of the 42 semiconductor material with copper

公开(公告)号：SG2013062914A

公开(公告)日：2014-03-28

申请号：SG2013062914

申请日：2013-08-19

Applicant: GEN ELECTRIC

Inventor： FOUST DONALD FRANKLIN ,  GARBER ROBERT ANDREW ,  METZGER WYATT KEITH ,  SHUBA ROMAN ,  CAO HONGBO ,  FELDMAN-PEABODY SCOTT DANIEL ,  CLARK LAURA ANNE ,  SHAN YINGHUI

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

公开(公告)号：MY162202A

公开(公告)日：2017-05-31

申请号：MYPI2013002828

申请日：2013-07-29

Applicant: GEN ELECTRIC

Inventor： FOUST DONALD FRANKLIN ,  GARBER ROBERT ANDREW ,  METZGER WYATT KEITH ,  SHUBA ROMAN ,  CAO HONGBO ,  FELDMAN-PEABODY SCOTT DANIEL ,  CLARK LAURA ANNE ,  SHAN YINGHUI

IPC: H01L21/00 ,  H01L21/02 ,  H01L31/073

Abstract: Methods for treating a semiconductor layer (110, 210) including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region (112, 212) in the semiconductor layer (110, 210) by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region (114, 214) in the semiconductor layer (110, 210), the second region (114, 214) including a dopant, wherein an average atomic concentration of the dopant in the second region (114, 214) is greater than an average atomic concentration of the dopant in the first region (112, 212). Photovoltaic devices (100) are also presented.

公开(公告)号：DE102013109202A1

公开(公告)日：2014-03-06

申请号：DE102013109202

申请日：2013-08-26

Applicant: GEN ELECTRIC

Inventor： FOUST DONALD FRANKLIN ,  METZGER WYATT KEITH ,  CAO HONGBO ,  GARBER ROBERT ANDREW ,  SHUBA ROMAN ,  FELDMAN-PEABODY SCOTT DANIEL ,  CLARK LAURA ANNE ,  SHAN YINGHUI

IPC: H01L31/18 ,  H01L21/34

Abstract: Es werden Verfahren zur Behandlung einer Halbleiterschicht, die ein Halbleitermaterial beinhaltet, vorgelegt. Ein Verfahren beinhaltet das Inkontaktbringen zumindest eines Teils des Halbleitermaterials mit einem Passivierungsmittel. Das Verfahren beinhaltet ferner das Ausbilden einer ersten Region in der Halbleiterschicht durch Einführen eines Dotierungsmittels in das Halbleitermaterial; und das Ausbilden einer chalkogenreichen Region. Das Verfahren beinhaltet ferner das Ausbilden einer zweiten Region in der Halbleiterschicht, wobei die zweite Region ein Dotierungsmittel aufweist, wobei die durchschnittliche Atomkonzentration des Dotierungsmittels in der zweiten Region größer ist als eine durchschnittliche Atomkonzentration des Dotierungsmittels in der ersten Region. Es werden außerdem photovoltaische Vorrichtungen vorgelegt.