公开(公告)号：EP0645476A2

公开(公告)日：1995-03-29

申请号：EP94306449.3

申请日：1994-09-01

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Scott, Curtis Edward ,  Levinson, Lionel Monty ,  Maxwell, Randolph E. ,  Kaliszewski, Mary Sue

IPC: C30B29/20 ,  C30B1/02

CPC classification number: C30B1/02 ,  C30B29/20

Abstract: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.

Abstract translation: 通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度，已经实现了将致密多晶陶瓷体大量转化成单晶体的固态方法。 由于该方法是固态工艺，因此不需要熔化陶瓷体以将其转化为单晶。 该方法已被用于通过将PCA加热至高于1100℃但低于2050℃的温度将氧化铝含量低于100wppm的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），氧化铝的熔点 。

公开(公告)号：EP0625594B1

公开(公告)日：2000-04-05

申请号：EP94303398.5

申请日：1994-05-11

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Maxwell, Randolph E. ,  Scott, Curtis Edward ,  Kaliszewski, Mary Sue ,  Jones, Marshall Gordon ,  Levinson, Lionel Monty ,  Erikson, Carl Edward

IPC: C30B1/02 ,  C30B29/20

CPC classification number: C30B13/06 ,  C30B1/00 ,  C30B1/08 ,  C30B13/00 ,  C30B29/20 ,  Y10S117/904

Abstract: Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800 DEG C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.

公开(公告)号：EP0691419A1

公开(公告)日：1996-01-10

申请号：EP95303594.6

申请日：1995-05-26

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Sproul, William D. ,  Parham, Thomas Gene ,  Maxwell, Randolph E. ,  Graham, Michael Evans ,  Bergman, Rolf Sverre

IPC: C23C14/35 ,  C23C14/06 ,  C23C14/08

CPC classification number: H01J9/20 ,  C23C14/0021 ,  C23C14/352

Abstract: A process for forming multi-layer optical quality films by sputtering at least a first and second material with at least two unbalanced DC magnetron sputtering devices. During sputtering, an effective negative radio frequency or alternating current bias is applied to the substrate and an arc suppression device is operated to reduce arcing on the sputtering devices. In addition, a controlled partial pressure of a reactive gas is maintained in the sputtering chamber to provide a sufficient amount of reactive gas to form the desired compound on the substrate without substantially poisoning the target.

Abstract translation: 通过用至少两个不平衡DC磁控溅射装置至少溅射第一和第二材料来形成多层光学质量膜的方法。 在溅射期间，将有效的负射频或交流偏压施加到衬底，并且操作消弧装置以减少溅射装置上的电弧。 此外，在溅射室中保持反应气体的受控分压，以提供足够量的反应气体，以在基板上形成所需化合物，而基本上不会中毒靶。 $$

公开(公告)号：EP0625594A3

公开(公告)日：1996-04-03

申请号：EP94303398.5

申请日：1994-05-11

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Maxwell, Randolph E. ,  Scott, Curtis Edward ,  Kaliszewski, Mary Sue ,  Jones, Marshall Gordon ,  Levinson, Lionel Monty ,  Erikson, Carl Edward

IPC: C30B1/02 ,  C30B29/20

CPC classification number: C30B13/06 ,  C30B1/00 ,  C30B1/08 ,  C30B13/00 ,  C30B29/20 ,  Y10S117/904

Abstract: A process for bulk conversion of a solid polycrystalline ceramic body to a single crystal body which comprises heating only a portion of said polycrystalline ceramic body with a localized energy source, without melting the entire said polycrystalline ceramic body, at a temperature and for a time sufficient to convert said polycrystalline ceramic body to said single crystal body. In one embodiment of the invention, a dense polycrystalline alumina (PCA) article is converted to sapphire via a solid state conversion process. A CO₂ laser energy source has been successfully employed as a localized energy source.

公开(公告)号：EP0645476B1

公开(公告)日：2001-04-04

申请号：EP94306449.3

申请日：1994-09-01

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Scott, Curtis Edward ,  Levinson, Lionel Monty ,  Maxwell, Randolph E. ,  Kaliszewski, Mary Sue

IPC: C30B29/20 ,  C30B1/02

CPC classification number: C30B1/02 ,  C30B29/20

Abstract: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100 DEG C but below 2050 DEG C, the melting point of alumina.

公开(公告)号：EP0645476A3

公开(公告)日：1996-04-03

申请号：EP94306449.3

申请日：1994-09-01

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Scott, Curtis Edward ,  Levinson, Lionel Monty ,  Maxwell, Randolph E. ,  Kaliszewski, Mary Sue

IPC: C30B29/20 ,  C30B1/02

CPC classification number: C30B1/02 ,  C30B29/20

Abstract: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.

公开(公告)号：EP0625594A2

公开(公告)日：1994-11-23

申请号：EP94303398.5

申请日：1994-05-11

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Maxwell, Randolph E. ,  Scott, Curtis Edward ,  Kaliszewski, Mary Sue ,  Jones, Marshall Gordon ,  Levinson, Lionel Monty ,  Erikson, Carl Edward

IPC: C30B1/02 ,  C30B29/20

CPC classification number: C30B13/06 ,  C30B1/00 ,  C30B1/08 ,  C30B13/00 ,  C30B29/20 ,  Y10S117/904

Abstract: A process for bulk conversion of a solid polycrystalline ceramic body to a single crystal body which comprises heating only a portion of said polycrystalline ceramic body with a localized energy source, without melting the entire said polycrystalline ceramic body, at a temperature and for a time sufficient to convert said polycrystalline ceramic body to said single crystal body.
In one embodiment of the invention, a dense polycrystalline alumina (PCA) article is converted to sapphire via a solid state conversion process.
A CO₂ laser energy source has been successfully employed as a localized energy source.

Abstract translation: 多晶氧化铝体已通过其中的局部能量源用于只是身体的一部分加热到使用激光以上1800℃的温度下作为能量源导致转换成兰宝石的固态转化方法转化为蓝宝石 在不到一个小时。 的多晶氧化铝体有氧化镁含量低于50wppm的，低于100微米的平均晶粒尺寸，并且密度大于3.97克/立方厘米。