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公开(公告)号：US20240117209A1
公开(公告)日：2024-04-11
申请号：US18543147
申请日：2023-12-18
Applicant: Guangdong University of Technology
Inventor： Yu ZHANG , Kai YANG , Guannan YANG , Chengqiang CUI
CPC classification number: C09D11/52 , C09D17/006
Abstract: A method for preparing a nano metal paste, including the following steps. (S1) An organic metallic salt and an organic reducing agent are added into water or an organic solvent to obtain a first mixture. (S2) The first mixture is reacted under heating to obtain a second mixture containing metal nanoparticles. (S3) The second mixture is concentrated to obtain a nano metal paste containing 20-95% by weight of the metal nanoparticles. A conductive paste and A conductive ink prepared by using the nano metal paste as filler are also provided.
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2.发明申请公开(公告)号：US20220415846A1
公开(公告)日：2022-12-29
申请号：US17897086
申请日：2022-08-26
Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY
Inventor： Yu ZHANG , Chengqiang CUI , Peilin LIANG , Jin TONG , Guannan YANG
IPC: H01L23/00
Abstract: This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.
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公开(公告)号：US20240113068A1
公开(公告)日：2024-04-04
申请号：US18500714
申请日：2023-11-02
Applicant: Guangdong University of Technology
Inventor： Yu ZHANG , Ranyuan ZHANG , Junyu HE , Wenjun HUANG , Chengqiang CUI , Guannan YANG
IPC: H01L23/00
CPC classification number: H01L24/81 , H01L2224/81011 , H01L2224/81098 , H01L2224/81205 , H01L2224/8184 , H01L2924/01029
Abstract: A method for forming an ultrafine-pitch all-copper interconnect structure is provided. Nano-copper particles are mixed with a solvent, a dispersant and a viscosity modifier to prepare a nano-copper paste. A chip with a preset number of copper pillars having a preset diameter and a substrate are selected, cleaned and pretreated. The chip is sucked and flipped by a bonding machine to make the copper pillars face outward. The chip is sucked through a suction nozzle of the bonding machine and dipped in the nano-copper paste. A protective gas is fed, and the copper pillars are aligned with copper pads on the substrate through an optical system of the bonding machine, bonded with the substrate at a preset pressure and temperature under ultrasonication, and cooled at room temperature to obtain the interconnect structure. An ultrafine-pitch all-copper interconnect structure fabricated by the method is also provided.
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公开(公告)号：US20210176865A1
公开(公告)日：2021-06-10
申请号：US17110501
申请日：2020-12-03
Applicant: Guangdong University of Technology
Inventor： Chengqiang CUI , Guannan YANG , Guangdong XU , Yu ZHANG , Xin CHEN
Abstract: A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.
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