公开(公告)号：US20220415846A1

公开(公告)日：2022-12-29

申请号：US17897086

申请日：2022-08-26

Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY

Inventor： Yu ZHANG ,  Chengqiang CUI ,  Peilin LIANG ,  Jin TONG ,  Guannan YANG

IPC: H01L23/00

Abstract: This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

公开(公告)号：US20190355587A1

公开(公告)日：2019-11-21

申请号：US16383885

申请日：2019-04-15

Applicant: Guangdong University of Technology

Inventor： Xin CHEN ,  Yun CHEN ,  Dachuang SHI ,  Xun CHEN ,  Qiang LIU ,  Jian GAO ,  Chengqiang CUI

IPC: H01L21/308 ,  H01L21/306

Abstract: A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.

公开(公告)号：US20240117209A1

公开(公告)日：2024-04-11

申请号：US18543147

申请日：2023-12-18

Applicant: Guangdong University of Technology

Inventor： Yu ZHANG ,  Kai YANG ,  Guannan YANG ,  Chengqiang CUI

IPC: C09D11/52 ,  C09D17/00

CPC classification number: C09D11/52 ,  C09D17/006

Abstract: A method for preparing a nano metal paste, including the following steps. (S1) An organic metallic salt and an organic reducing agent are added into water or an organic solvent to obtain a first mixture. (S2) The first mixture is reacted under heating to obtain a second mixture containing metal nanoparticles. (S3) The second mixture is concentrated to obtain a nano metal paste containing 20-95% by weight of the metal nanoparticles. A conductive paste and A conductive ink prepared by using the nano metal paste as filler are also provided.

公开(公告)号：US20210219476A1

公开(公告)日：2021-07-15

申请号：US17218367

申请日：2021-03-31

Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY

Inventor： Xin CHEN ,  Yunbo HE ,  Xiquan MAI ,  Chengqiang CUI ,  Qiang LIU ,  Jian GAO ,  Zhijun YANG ,  Xun CHEN ,  Yun CHEN ,  Kai ZHANG ,  Hui TANG ,  Yu ZHANG

IPC: H05K13/04 ,  H01L33/00 ,  H01L33/62

Abstract: A variable pitch electronic component mass transfer apparatus is disclosed. A die-bond transfer head is disposed below each of the die-bond brackets. The die-bond connecting rod is provided with die-bond movable nodes arranged equidistantly. Each of the die-bond movable node is hinged to one of the die-bond brackets. An output end of the die-bond linear motor drives the die-bond connecting rod to move telescopically. A flip-chip transfer head is disposed below each of the flip-chip brackets. The flip-chip connecting rod is provided with flip-chip movable nodes arranged equidistantly. Each of the flip-chip movable nodes is hinged to one of the flip-chip brackets. An output end of the flip-chip linear motor drives the flip-chip connecting rod to move telescopically. An output end of the connecting rod rotating motor is connected to the flip-chip rail, and is configured to turn over the flip-chip rail.

公开(公告)号：US20240113068A1

公开(公告)日：2024-04-04

申请号：US18500714

申请日：2023-11-02

Applicant: Guangdong University of Technology

Inventor： Yu ZHANG ,  Ranyuan ZHANG ,  Junyu HE ,  Wenjun HUANG ,  Chengqiang CUI ,  Guannan YANG

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L2224/81011 ,  H01L2224/81098 ,  H01L2224/81205 ,  H01L2224/8184 ,  H01L2924/01029

Abstract: A method for forming an ultrafine-pitch all-copper interconnect structure is provided. Nano-copper particles are mixed with a solvent, a dispersant and a viscosity modifier to prepare a nano-copper paste. A chip with a preset number of copper pillars having a preset diameter and a substrate are selected, cleaned and pretreated. The chip is sucked and flipped by a bonding machine to make the copper pillars face outward. The chip is sucked through a suction nozzle of the bonding machine and dipped in the nano-copper paste. A protective gas is fed, and the copper pillars are aligned with copper pads on the substrate through an optical system of the bonding machine, bonded with the substrate at a preset pressure and temperature under ultrasonication, and cooled at room temperature to obtain the interconnect structure. An ultrafine-pitch all-copper interconnect structure fabricated by the method is also provided.

公开(公告)号：US20210176865A1

公开(公告)日：2021-06-10

申请号：US17110501

申请日：2020-12-03

Applicant: Guangdong University of Technology

Inventor： Chengqiang CUI ,  Guannan YANG ,  Guangdong XU ,  Yu ZHANG ,  Xin CHEN

IPC: H05K3/22 ,  H05K3/26

Abstract: A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.

公开(公告)号：US20190352789A1

公开(公告)日：2019-11-21

申请号：US16383852

申请日：2019-04-15

Applicant: Guangdong University of Technology

Inventor： Yun CHEN ,  Xin CHEN ,  Dachuang SHI ,  Xun CHEN ,  Qiang LIU ,  Jian GAO ,  Chengqiang CUI

IPC: C25D5/02 ,  C25D7/12 ,  C25D3/38 ,  C25D17/00 ,  H01L21/288 ,  H01L21/768

Abstract: A method for synchronous electroplating filling of differential vias and an electroplating device. Laser irradiation is adopted as an external energy field to assist synchronous electroplating filling of differential vias. A mask or digital maskless technology is used to precisely heat the vias with different positions and different sizes. The filling rate of different regions varies with the temperature difference, thereby realizing the synchronous electroplating filling of differential vias in one step. In the processes of immersion pre-wetting by the electroplating liquid and electroplating filling copper, the laser is used for preheating the wafer processed with vias. In these two steps, the laser needs to locally and precisely heat upper surfaces of the micro vias on the wafer through the mask corresponding to the micro vias on the wafer.