公开(公告)号：US20220415846A1

公开(公告)日：2022-12-29

申请号：US17897086

申请日：2022-08-26

Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY

Inventor： Yu ZHANG ,  Chengqiang CUI ,  Peilin LIANG ,  Jin TONG ,  Guannan YANG

IPC: H01L23/00

Abstract: This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.