公开(公告)号：EP1269702B1

公开(公告)日：2013-01-23

申请号：EP01917192.5

申请日：2001-03-20

Applicant: Gemalto SA ,  STMicroelectronics S.A.

Inventor： DELL'OVA, Francis ,  RIZZO, Pierre

IPC: H04L25/06 ,  G06K7/10 ,  H03K5/08 ,  H03D1/10 ,  G06K7/00 ,  G06K19/07

CPC classification number: G06K19/0701 ,  G06K7/0008 ,  G06K19/0723 ,  H03D1/10 ,  H03K5/082 ,  H04L25/061

公开(公告)号：EP1269702A1

公开(公告)日：2003-01-02

申请号：EP01917192.5

申请日：2001-03-20

Applicant: GEMPLUS ,  STMicroelectronics S.A.

Inventor： DELL'OVA, Francis ,  RIZZO, Pierre

IPC: H04L25/06 ,  G06K7/10 ,  H03K5/08 ,  H03D1/10

CPC classification number: G06K19/0701 ,  G06K7/0008 ,  G06K19/0723 ,  H03D1/10 ,  H03K5/082 ,  H04L25/061

Abstract: The invention concerns a demodulator of an amplitude-modulated signal (Vdb), characterised in that it comprises a peak detecting cell (DCR) capable of extracting the reference modulating signal (Vpeak1) of the modulated signal (Vdb); a first demodulator (FE) adapted to detect the peak of the reference modulating signal (Vpeak1) to generate a high comparison threshold and locate the start of the modulation, a second demodulator (RE) adapted to detect a trough of the reference modulating signal (Vpeak1) to generate a low comparison threshold and locate the end of the modulation; a logic processing unit capable of supplying the demodulated signal (Vdemod).

公开(公告)号：EP1264338A1

公开(公告)日：2002-12-11

申请号：EP01913999.7

申请日：2001-03-13

Applicant: GEMPLUS ,  STMicroelectronics S.A.

Inventor： DELL'OVA, Francis ,  RIZZO, Pierre ,  LHERMET, Frank ,  POIROT, Dominique ,  RAYON, Stéphane ,  GOMEZ, Bertrand ,  LESSOILE, Nicole

IPC: H01L21/66 ,  H01L23/66

CPC classification number: H01L22/14 ,  H01L22/20 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention concerns a method for making an integrated electronic component arranged on a substrate wafer comprising at least two metallising steps. The invention is characterised in that the value of an electrical parameter of the component is determined after a metallising step, and one of the following metallising processes is carried out with an adjusting mask selected among n predefined masks to obtain a desired value of the parameter, the selection of the adjusting mask being performed in accordance with the predetermined value of the electrical parameter.