公开(公告)号：US20250031457A1

公开(公告)日：2025-01-23

申请号：US18223780

申请日：2023-07-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sagar Premnath Karalkar ,  . Ajay ,  Souvick Mitra ,  Kyong Jin Hwang

IPC: H01L27/02

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a semiconductor substrate including a well, a field-effect transistor including a gate, a source having a doped region in the well, and a drain, and a silicon-controlled rectifier including a doped region in the well.

公开(公告)号：US20240079482A1

公开(公告)日：2024-03-07

申请号：US17901015

申请日：2022-09-01

Applicant: GlobalFoundries U.S. Inc.

Inventor： Prantik Mahajan ,  . Ajay ,  Souvick Mitra ,  Robert J. Gauthier

IPC: H01L29/74 ,  H01L29/06

CPC classification number: H01L29/7432 ,  H01L29/0692 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/0653

Abstract: Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.