公开(公告)号：US20250031457A1

公开(公告)日：2025-01-23

申请号：US18223780

申请日：2023-07-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sagar Premnath Karalkar ,  . Ajay ,  Souvick Mitra ,  Kyong Jin Hwang

IPC: H01L27/02

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a semiconductor substrate including a well, a field-effect transistor including a gate, a source having a doped region in the well, and a drain, and a silicon-controlled rectifier including a doped region in the well.

公开(公告)号：US20240429227A1

公开(公告)日：2024-12-26

申请号：US18213442

申请日：2023-06-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sagar Premnath Karalkar ,  Vishal Ganesan ,  Kyong Jin Hwang ,  Souvick Mitra

IPC: H01L27/02

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises adjacent first and second gates over a semiconductor substrate, a source adjacent to the first gate, and a drain adjacent to the second gate. The source includes a first well in the semiconductor substrate, a second well in the semiconductor substrate, and a doped region. The first well and the doped region have a first conductivity type, and the second well has a second conductivity type opposite from the first conductivity type. The doped region has a first portion that overlaps with the first well, and the doped region has a second portion that overlaps with the second well.