公开(公告)号：EP4195278A1

公开(公告)日：2023-06-14

申请号：EP22203178.3

申请日：2022-10-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shank, Steven M. ,  Ngu, Yves T. ,  Zierak, Michael J. ,  Adusumilli, Siva P.

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/13 ,  H03K17/687 ,  H01L29/786

Abstract: A structure, comprising: a field effect transistor stack including a plurality of transistors over a buried insulator layer; a polysilicon isolation region in a substrate below the field effect transistor stack and the buried insulator layer; and a resistor network in the polysilicon isolation region, the resistor network having a different resistivity than the polysilicon isolation region.

公开(公告)号：EP4300590A1

公开(公告)日：2024-01-03

申请号：EP22198916.3

申请日：2022-09-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jain, Vibhor ,  Raghunathan, Uppili S. ,  Liu, Qizhi ,  Ngu, Yves T. ,  Raman, Ajay ,  Krishnasamy, Rajendran ,  Joseph, Alvin J.

IPC: H01L29/732 ,  H01L21/331 ,  H01L29/08 ,  H01L29/06

Abstract: A structure comprising: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.