公开(公告)号：EP4394464A1

公开(公告)日：2024-07-03

申请号：EP23204763.9

申请日：2023-10-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Silverstein, Laura J. ,  Shank, Steven M. ,  Holt, Judson R. ,  Bian, Yusheng

IPC: G02B6/122 ,  G02B6/30

CPC classification number: G02B6/305 ,  G02B6/122

Abstract: Disclosed are a structure with a substrate-embedded waveguide and a method of forming the structure. The waveguide includes cladding material lining a trench in a substrate, a core in the trench on the cladding material, and at least one cavity within the core. Each cavity extends from one end of the core toward the opposite end and contains a low refractive index material or is under vacuum so the waveguide is an arrow waveguide. An insulator layer is on the substrate and extends laterally over the waveguide and a semiconductor layer is on the insulator layer. Additionally, depending upon the embodiment, an additional waveguide can be aligned above the substrate-embedded waveguide either on the isolation region or on a waveguide extender that extends at least partially through the isolation region and the insulator layer to the waveguide.

公开(公告)号：EP4235242A1

公开(公告)日：2023-08-30

申请号：EP22199632.5

申请日：2022-10-04

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bian, Yusheng ,  Polomoff, Nicholas ,  Donegan, Keith ,  Liu, Qizhi ,  Shank, Steven M.

IPC: G02B6/42 ,  G02B6/122

Abstract: Structures including an edge coupler, and methods of fabricating a structure that includes an edge coupler. The structure (10) includes an edge coupler having a waveguide core (12) with an end surface (14) and a longitudinal axis (18). The end surface (14) defines a plane tilted in a first direction at a first acute angle relative to the longitudinal axis (18) and tilted in a second direction at a second acute angle relative to the longitudinal axis (18). The second direction differs from the first direction.

公开(公告)号：EP4220254A1

公开(公告)日：2023-08-02

申请号：EP22197933.9

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bian, Yusheng ,  Shank, Steven M. ,  Hirokawa, Takako

IPC: G02B6/12

Abstract: Structures including an edge coupler (11) and methods of fabricating a structure including an edge coupler. The structure includes an edge coupler (11) having a longitudinal axis, a first ring resonator (14), and a second ring resonator (15). The first ring resonator (14) has a first center point that is spaced from the longitudinal axis of the edge coupler (11) by a first perpendicular distance. The second ring resonator (15) has a second center point that is spaced from the longitudinal axis of the edge coupler (11) by a second perpendicular distance.

公开(公告)号：EP4376092A1

公开(公告)日：2024-05-29

申请号：EP23201745.9

申请日：2023-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Lydon-Nuhfer, Megan ,  Shank, Steven M. ,  Vallett, Aaron L. ,  Abou-Khalil, Michel ,  McTaggart, Sarah A. ,  Krishnasamy, Rajendran

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/306 ,  H01L29/04

CPC classification number: H01L29/78 ,  H01L29/4236 ,  H01L29/045 ,  H01L21/30608 ,  H01L29/66621

Abstract: An integrated circuit (IC) structure includes a V-shaped cavity in a semiconductor substrate. A source region and a drain region are on opposing sides of the V-shaped cavity. A gate structure includes a gate dielectric layer, spacers, and a gate electrode on the gate dielectric layer between the spacers. The gate structure is fully within the V-shaped cavity. The IC structure provides a switch that finds advantageous application as part of a low noise amplifier. The IC structure provides a smaller gate width, decreased capacitance, increased gain and increased radio frequency (RF) performance compared to planar devices or devices without the gate structure fully within V-shaped cavity.

公开(公告)号：EP4235240A1

公开(公告)日：2023-08-30

申请号：EP22202066.1

申请日：2022-10-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Bian, Yusheng ,  Shank, Steven M. ,  Holt, Judson

IPC: G02B6/136

Abstract: A photonics structure comprising an optical component; a substrate including a cavity and a first dielectric material in the cavity; and a first dielectric layer positioned in a vertical direction between the optical component and the cavity, wherein the optical component is positioned in a lateral direction to overlap with the cavity in the substrate.

公开(公告)号：EP4195278A1

公开(公告)日：2023-06-14

申请号：EP22203178.3

申请日：2022-10-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shank, Steven M. ,  Ngu, Yves T. ,  Zierak, Michael J. ,  Adusumilli, Siva P.

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/13 ,  H03K17/687 ,  H01L29/786

Abstract: A structure, comprising: a field effect transistor stack including a plurality of transistors over a buried insulator layer; a polysilicon isolation region in a substrate below the field effect transistor stack and the buried insulator layer; and a resistor network in the polysilicon isolation region, the resistor network having a different resistivity than the polysilicon isolation region.