公开(公告)号：EP4369408A1

公开(公告)日：2024-05-15

申请号：EP23198686.0

申请日：2023-09-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： PANDEY, Shesh M. ,  KRISHNASAMY, Rajendran ,  HOLT, Judson R. ,  TAN, Chung Foong

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/407 ,  H01L29/0653 ,  H01L29/7835 ,  H01L29/404

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a metal field plate contact and methods of manufacture. The structure includes: a gate structure (14) on a semiconductor substrate (12); a shallow trench isolation structure (18) within the semiconductor substrate; and a contact (22) extending from the gate structure and into the shallow trench isolation structure.

公开(公告)号：EP4369396A1

公开(公告)日：2024-05-15

申请号：EP23198688.6

申请日：2023-09-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： PANDEY, Shesh M. ,  KRISHNASAMY, Rajendran ,  JAIN, Vibhor

IPC: H01L23/525 ,  G11C17/16 ,  H01L23/34 ,  H10B20/25

CPC classification number: H01L23/5256 ,  H10B20/25 ,  G11C17/16 ,  H01L23/345

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an e-fuse with metal fill structures and methods of manufacture. The structure includes: an insulator material; an e-fuse structure on the insulator material; a plurality of heaters on the insulator material and positioned on sides of the e-fuse structure; and conductive fill material within a space between the e-fuse structure and the plurality of heaters.