-
公开(公告)号：EP4398701A1
公开(公告)日：2024-07-10
申请号：EP23195307.6
申请日：2023-09-05
Applicant: GlobalFoundries U.S. Inc.
Inventor： Pritchard, David , Yu, Hong , Zhao, Zhixing
IPC: H10N97/00
CPC classification number: H01L28/91
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure.
Search Results
1
records
(took 0.019 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
