公开(公告)号：EP4421849A1

公开(公告)日：2024-08-28

申请号：EP23201754.1

申请日：2023-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhao, Zhixing ,  Kleimaier, Dominik M. ,  Duenkel, Stefan

IPC: H01L21/28 ,  G11C11/22 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78 ,  H10B51/30

CPC classification number: H10B51/30 ,  H01L29/516 ,  H01L29/513 ,  H01L29/42368 ,  H01L29/6684 ,  H01L29/7833 ,  H01L29/78391 ,  H01L29/40111 ,  G11C11/223 ,  G11C11/5657 ,  G11C11/2273 ,  G11C11/2275

Abstract: A ferroelectric memory device (100) includes a substrate (110) including a source region (120) and a drain region (130), and a gate structure (140) disposed over the substrate. The gate structure includes a gate electrode (146) including a plurality of electrode portions (146', 146'') arranged in a first direction parallel to a top surface of the substrate, an oxide layer (142) including a plurality of oxide portions (142', 142'') corresponding respectively to the plurality of electrode portions, and a ferroelectric layer (144) disposed between the gate electrode and the oxide layer along a second direction perpendicular to the first direction and including a plurality of ferroelectric portions (144', 144'') corresponding respectively to the plurality of oxide portions. A least one of the plurality of oxide portions and at least one of the plurality of ferroelectric portions have different thicknesses along the second direction.

公开(公告)号：EP4398701A1

公开(公告)日：2024-07-10

申请号：EP23195307.6

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pritchard, David ,  Yu, Hong ,  Zhao, Zhixing

IPC: H10N97/00

CPC classification number: H01L28/91

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure.