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Patent Agency Ranking
公开(公告)号：EP2309529A4
公开(公告)日：2015-06-03
申请号：EP08874613
申请日：2008-11-07
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MATSUI TOSHIKAZU , HAMANA YASUMASA , NAKAMURA KIMITSUGU , ISHIGAMI YOSHIHIRO , OGURI DAIJIRO
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公开(公告)号：JPH0668840A
公开(公告)日：1994-03-11
申请号：JP22414392
申请日：1992-08-24
Applicant: HAMAMATSU PHOTONICS KK
Inventor： TAMAGAWA HIROYUKI , OGURI DAIJIRO , SUZUKI SEIJI
Abstract: PURPOSE:To improve the quantum efficiency of a UV-ray photoelectric surface. CONSTITUTION:A photoelectric surface or a photomultiplier tube is provided with a window material to transmit incidental light, a substrate film including aluminum formed on the window material, and a photo-electron emission film including tellurium and alkali metal formed on the substrate film. Compared to a constitution using Cr for the substrate film, or compared to a constitution using Au or Ag for the substrate film, a favorable quantum efficiency can be realized in a UV-ray zone. As above alkali metal, Cs, Rb, or K-Cs can be used, and a similar result can be achieved in either case.
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公开(公告)号：JP2009301905A
公开(公告)日：2009-12-24
申请号：JP2008155777
申请日：2008-06-13
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： MATSUI TOSHIKAZU , HAMANA YASUMASA , NAKAMURA KOJI , ISHIGAMI YOSHIHIRO , OGURI DAIJIRO
Abstract: PROBLEM TO BE SOLVED: To provide a photocathode which can make various characteristics improved.
SOLUTION: In the photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and is equipped with a function of emitting photoelectrons outside by incident light. In the photoelectron emitting layer 18, Bi of 32 mol% or less relative to Sb and Bi is contained.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供可以改善各种特性的光电阴极。 解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子发射层18含有Sb和Bi，并且配备有 通过入射光在外部发射光电子的功能。 在光电子发射层18中，含有相对于Sb和Bi为32摩尔％以下的Bi。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2014044960A
公开(公告)日：2014-03-13
申请号：JP2013229037
申请日：2013-11-05
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： MATSUI TOSHIKAZU , HAMANA YASUMASA , NAKAMURA KOJI , ISHIGAMI YOSHIHIRO , OGURI DAIJIRO
Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of improving various characteristics.SOLUTION: In a photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and comprises a function for emitting photoelectrons outside by incident light. The photoelectron emitting layer 18 contains the Bi of 6.9 mol% or more and 32 mol% or less to SbBi.
Abstract translation: 要解决的问题：提供能够改善各种特性的光电阴极。解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子 发光层18含有Sb和Bi，并且包括通过入射光在外部发射光电子的功能。 光电子发射层18含有对SbBi为6.9摩尔％以上且32摩尔％以下的Bi。
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公开(公告)号：JP2013016509A
公开(公告)日：2013-01-24
申请号：JP2012204735
申请日：2012-09-18
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： MATSUI TOSHIKAZU , HAMANA YASUMASA , NAKAMURA KOJI , ISHIGAMI YOSHIHIRO , OGURI DAIJIRO
IPC: H01J1/34
Abstract: PROBLEM TO BE SOLVED: To provide a photocathode which can improve various characteristics.SOLUTION: In a photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and comprises a function of emitting photoelectrons outside by incident light. The photoelectron emitting layer 18 contains the Bi of 32 mol% or less relative to SbBi.
Abstract translation: 要解决的问题：提供可以改善各种特性的光电阴极。 解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子发射层18包含Sb和Bi，并且包括功能 通过入射光在外部发射光电子。 光电子发射层18含有相对于SbBi为32摩尔％以下的Bi。 版权所有（C）2013，JPO＆INPIT
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