公开(公告)号：EP2309529A4

公开(公告)日：2015-06-03

申请号：EP08874613

申请日：2008-11-07

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MATSUI TOSHIKAZU ,  HAMANA YASUMASA ,  NAKAMURA KIMITSUGU ,  ISHIGAMI YOSHIHIRO ,  OGURI DAIJIRO

IPC: H01J1/34 ,  H01J31/26 ,  H01J40/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J31/26

公开(公告)号：JP2013225503A

公开(公告)日：2013-10-31

申请号：JP2013060938

申请日：2013-03-22

Applicant: Sanken Electric Co Ltd ,  サンケン電気株式会社 ,  Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： FUKUYA TOSHIRO ,  MATSUO TETSUJI ,  ISHIGAMI YOSHIHIRO ,  FUTAHASHI TOKUAKI

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01J31/38

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J9/025 ,  H01J9/12 ,  H01J31/26 ,  H01J31/507

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photocathode capable of improving quantum efficiency as compared with the conventional GaN photocathode, and a method for manufacturing the semiconductor photocathode.SOLUTION: When Xrepresents a minimum value for a composition ratio X in an intermediate region 1M, and Xrepresents a minimum value for a composition ratio X in a second region 12, in a first region 11, 0≤g(x)≤Xis satisfied, in the intermediate region 1M, g(x) is a monotone decreasing function and g(x)≤Xis satisfied, in the second region 12, g(x) is a monotone decreasing function or a constant value, in a case where g(x) in the second region 12 is a monotone decreasing function, a thickness D1 of the first region 11 is 18 (nm) or more, and in a case where g(x) in the second region 12 is a constant value, the thickness D1 of the first region 11 is 31 (nm) or more.

Abstract translation: 要解决的问题：提供与常规GaN光电阴极相比能够提高量子效率的半导体光电阴极以及制造半导体光电阴极的方法。解决方案：当X表示中间区域1M中的组成比X的最小值时， X表示第二区域12中的组成比X的最小值，在第一区域11中满足0≤g（x）≤Xis的情况下，在中间区域1M中，g（x）为单调递减函数，g x）≤Xs在第二区域12中满足g（x）是单调递减函数或常数值，在第二区域12中的g（x）是单调递减函数的情况下， 第一区域11为18（nm）以上，在第二区域12的g（x）为一定值的情况下，第一区域11的厚度D1为31nm以上。

公开(公告)号：JP2009301905A

公开(公告)日：2009-12-24

申请号：JP2008155777

申请日：2008-06-13

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： MATSUI TOSHIKAZU ,  HAMANA YASUMASA ,  NAKAMURA KOJI ,  ISHIGAMI YOSHIHIRO ,  OGURI DAIJIRO

IPC: H01J1/34 ,  H01J40/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J31/26

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode which can make various characteristics improved.
SOLUTION: In the photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and is equipped with a function of emitting photoelectrons outside by incident light. In the photoelectron emitting layer 18, Bi of 32 mol% or less relative to Sb and Bi is contained.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供可以改善各种特性的光电阴极。 解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子发射层18含有Sb和Bi，并且配备有 通过入射光在外部发射光电子的功能。 在光电子发射层18中，含有相对于Sb和Bi为32摩尔％以下的Bi。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2014044960A

公开(公告)日：2014-03-13

申请号：JP2013229037

申请日：2013-11-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： MATSUI TOSHIKAZU ,  HAMANA YASUMASA ,  NAKAMURA KOJI ,  ISHIGAMI YOSHIHIRO ,  OGURI DAIJIRO

IPC: H01J1/34 ,  H01J9/12

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of improving various characteristics.SOLUTION: In a photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and comprises a function for emitting photoelectrons outside by incident light. The photoelectron emitting layer 18 contains the Bi of 6.9 mol% or more and 32 mol% or less to SbBi.

Abstract translation: 要解决的问题：提供能够改善各种特性的光电阴极。解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子 发光层18含有Sb和Bi，并且包括通过入射光在外部发射光电子的功能。 光电子发射层18含有对SbBi为6.9摩尔％以上且32摩尔％以下的Bi。

公开(公告)号：JP2013016509A

公开(公告)日：2013-01-24

申请号：JP2012204735

申请日：2012-09-18

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： MATSUI TOSHIKAZU ,  HAMANA YASUMASA ,  NAKAMURA KOJI ,  ISHIGAMI YOSHIHIRO ,  OGURI DAIJIRO

IPC: H01J1/34

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode which can improve various characteristics.SOLUTION: In a photocathode 10, an intermediate layer 14, an underlying layer 16, and a photoelectron emitting layer 18 are formed in this order on a substrate 12. The photoelectron emitting layer 18 contains Sb and Bi, and comprises a function of emitting photoelectrons outside by incident light. The photoelectron emitting layer 18 contains the Bi of 32 mol% or less relative to SbBi.

Abstract translation: 要解决的问题：提供可以改善各种特性的光电阴极。 解决方案：在光电阴极10中，中间层14，下层16和光电子发射层18依次形成在基板12上。光电子发射层18包含Sb和Bi，并且包括功能 通过入射光在外部发射光电子。 光电子发射层18含有相对于SbBi为32摩尔％以下的Bi。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JPH1083961A

公开(公告)日：1998-03-31

申请号：JP23702796

申请日：1996-09-06

Applicant: HAMAMATSU PHOTONICS KK

Inventor： UCHIYAMA SHOICHI ,  ISHIGAMI YOSHIHIRO ,  SUGA HIROBUMI ,  OTA MASASHI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To improve the characteristics of a GaN-system compound semiconductor layer, by forming an AlN layer containing Mg on a substrate, and forming the GaN-system compound semiconductor layer on the AlN layer at a specified temperature. SOLUTION: A saphire substrate 1 is maintained at, e.g. 1,000 deg.C, NH3 is introduced into a growing chamber and the surface of the substrate 1 is nitrided. Then, the temperature of the substrate 1 is lowered to, e.g. 600 deg.C, trimethyl aluminum and NH3 are introduced, bis(ethyl cyclopentadienyl) Mg is introduced and a capped AlN layer 2 is formed. After the AlN layer 2, wherein Mg is added, is formed on the substrate 1, the substrate 1 is heated. With the temperature of the substrate 1 being maintained at, e.g. 950 deg.C, trimethyl gallium and NH3 are introduced into the growing chamber, and a P-type GaN layer 3 is formed. When the GaN layer 3 is formed, Mg in the AlN layer 2 is diffused in the GaN layer 3 and made active, and the P-type GaN layer 3 is formed.