公开(公告)号：JP2001319565A

公开(公告)日：2001-11-16

申请号：JP2000138775

申请日：2000-05-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OBA KOICHIRO ,  KINOSHITA MASAO ,  YAMABE SHIRO ,  KAWASHIMA TATSU

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of easily and effectively improving quantum efficiency on a photoelectric face. SOLUTION: The photocathode comprises a ferroelectric substrate 12 and a photoelectric face 11 formed on the ferroelectric substrate 12. This also specifies that the vicinity of the interface between the ferroelectric substrate 12 and the photoelectric face 11 becomes a negative potential by polarizing the ferroelectric substrate 12 so that the photoelectric face side of the ferroelectric substrate 12 be a negative pole. As the result, potential inclination can be easily and effectively formed inside the photoelectric face. Also, the photoelectron excited inside the photoelectric face is at a position to easily go in the direction of the emitting face to improved the quantum efficiency.