公开(公告)号：JP2005086175A

公开(公告)日：2005-03-31

申请号：JP2003320121

申请日：2003-09-11

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： UCHIYAMA SHOICHI ,  SUGIURA RYUJI ,  KAWASHIMA TATSU

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/20 ,  B23K26/40 ,  B23K101/40 ,  B28D5/00 ,  H01L21/301 ,  H01L21/302 ,  H01L21/78

CPC classification number: B28D5/0011 ,  B23K26/0057 ,  B23K26/0087 ,  B23K26/0624 ,  B23K26/0861 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/172 ,  B23K2203/50 ,  H01L21/78 ,  H01L21/7813 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor thin film, capable of dicing a semiconductor thin film in a comparatively short time and forming the cut surface comparatively smoothly, and to provide a semiconductor thin film, a semiconductor thin-film chip, an electron tube provided with the semiconductor thin film and a light detector. SOLUTION: When dicing in a chip form a Si substrate 10, having a diamond thin film 12 formed on the surface 10a thereof, regions having modified properties are formed by means of a multiphoton absorption process, by locating a light focusing point P in the interior of the substrate 10 and the diamond thin film 12 and irradiating with a laser light L, thereby forming dicing start regions 8a, 8b along scheduled dice lines with the modified-property regions. Next, the Si substrate 10 and the diamond thin film 12 are cut along the dicing start regions 8a and 8b. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：为了提供半导体薄膜的制造方法，其能够在较短时间内对半导体薄膜进行切割，并且相对平滑地形成切割面，并且提供半导体薄膜，半导体薄膜 薄膜芯片，设置有半导体薄膜的电子管和光检测器。 解决方案：当芯片中的切割形成具有形成在其表面10a上的金刚石薄膜12的Si基板10时，通过多光子吸收工艺形成具有改进特性的区域，通过将聚光点P 在基板10的内部和金刚石薄膜12中，并用激光L照射，从而沿着具有改性特性区域的预定切割线形成切割开始区域8a，8b。 接下来，沿着切割开始区域8a和8b切割Si衬底10和金刚石薄膜12。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001319565A

公开(公告)日：2001-11-16

申请号：JP2000138775

申请日：2000-05-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OBA KOICHIRO ,  KINOSHITA MASAO ,  YAMABE SHIRO ,  KAWASHIMA TATSU

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of easily and effectively improving quantum efficiency on a photoelectric face. SOLUTION: The photocathode comprises a ferroelectric substrate 12 and a photoelectric face 11 formed on the ferroelectric substrate 12. This also specifies that the vicinity of the interface between the ferroelectric substrate 12 and the photoelectric face 11 becomes a negative potential by polarizing the ferroelectric substrate 12 so that the photoelectric face side of the ferroelectric substrate 12 be a negative pole. As the result, potential inclination can be easily and effectively formed inside the photoelectric face. Also, the photoelectron excited inside the photoelectric face is at a position to easily go in the direction of the emitting face to improved the quantum efficiency.