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    Tunneling emitter and forming method
    1.
    发明专利
    Tunneling emitter and forming method 审中-公开
    隧道发射和形成方法

    公开(公告)号：JP2005135930A

    公开(公告)日：2005-05-26

    申请号：JP2005038982

    申请日：2005-02-16

    Applicant: Hewlett Packard Co ,  ヒューレット・パッカード・カンパニーHewlett−Packard Company

    Inventor： RAMAMOORTHI SRIRAM ,  CHEN ZHIZANG

    IPC: H01J1/30 ,  G11C11/23 ,  H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J21/10 ,  H01J29/04 ,  H01J31/12

    CPC classification number: B82Y10/00 ,  G11C11/23 ,  H01J1/312 ,  H01J9/025

    Abstract: PROBLEM TO BE SOLVED: To provide a flat emitter having a high energy current density and operating with high reliability in an environment of a low degree of vacuum. SOLUTION: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within a region in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供具有高能量电流密度并且在低真空度的环境中以高可靠性运行的平坦发射体。 解决方案：发射极具有形成在电子供应层上的电子供应层和隧道层。 可选地，在电子供应层上形成绝缘体层，并且在形成隧道层的区域内形成开口。 在隧道层上形成阴极层。 导电层部分地设置在阴极层上，部分地设置在绝缘体层上，如果存在的话。 导电层限定一个开口以提供用于电子和/或光子的能量发射的表面。 优选但是可选地，对发射极进行退火处理，从而增加从电子供给层向阴极层隧穿的电子的供应。 版权所有（C）2005，JPO＆NCIPI

    TUNNEL EMITTING DEVICE AND FORMING METHOD
    2.
    发明专利
    TUNNEL EMITTING DEVICE AND FORMING METHOD 审中-公开

    公开(公告)号：JP2003141984A

    公开(公告)日：2003-05-16

    申请号：JP2002304828

    申请日：2002-10-18

    Applicant: HEWLETT PACKARD CO

    Inventor： RAMAMOORTHI SRIRAM ,  CHEN ZHIZANG

    IPC: H01J1/30 ,  G11C11/23 ,  H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J21/10 ,  H01J29/04 ,  H01J31/12

    Abstract: PROBLEM TO BE SOLVED: To provide a flat emitting device having a high energy current density that is capable of operating with high reliability in the environment of low degree of vacuum. SOLUTION: The emitting device comprises an electron supply layer and a tunnel layer formed on the electron supply layer. As an option, an insulating layer is formed on the electron supply layer and the insulating layer has an opening part that is demarcated in the region in which the tunnel layer is formed. A cathode layer is formed on the tunnel layer. A conductive layer is arranged partially on the cathode layer and partially, if there exists, on the insulating layer. The conductive layer demarcates an opening part for providing a surface for emitting energy of electron and/or photons. As an option, it is desirable that the emitting device is put to an annealing process and thereby the supply quantity of electrons that penetrate from the electron supply layer through the cathode layer is increased.

    5.
    发明专利
    未知

    公开(公告)号：DE60201748D1

    公开(公告)日：2004-12-02

    申请号：DE60201748

    申请日：2002-04-16

    Applicant: HEWLETT PACKARD CO

    Inventor： CHEN ZHIZHANG ,  REGAN MICHAEL J ,  BOLF BRIAN E ,  NOVET THOMAS ,  BENNING PAUL ,  JOHNSTONE MARK ALAN ,  RAMAMOORTHI SRIRAM

    IPC: H01J31/12 ,  H01J1/312 ,  H01J9/02 ,  H01J21/06

    Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

    TUNNELING EMITTER
    8.
    发明申请
    TUNNELING EMITTER 审中-公开
    隧道式发射机

    公开(公告)号：WO02089167A3

    公开(公告)日：2003-05-01

    申请号：PCT/US0212257

    申请日：2002-04-16

    Applicant: HEWLETT PACKARD CO

    Inventor： CHEN ZHIZHANG ,  REGAN MICHAEL J ,  BOLF BRIAN E ,  NOVET THOMAS ,  BENNING PAUL ,  JOHNSTONE MARK ALAN ,  RAMAMOORTHI SRIRAM

    IPC: H01J31/12 ,  H01J1/312 ,  H01J9/02 ,  H01J21/06

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

    Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

    Abstract translation: 发射极（50,100）具有形成在电子供给层上的电子供给层（10）和隧穿层（20）。 可选地，在电子供给层上形成绝缘体层（78），并且在其内形成有形成有隧道层的开口。 在隧穿层上形成阴极层（14）以提供电子（16）和/或光子（18）的能量发射（22）的表面。 优选地，对发射极进行退火处理（120,122），从而增加从电子供给层隧穿到阴极层的电子的供应。

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