公开(公告)号：WO2002089167A2

公开(公告)日：2002-11-07

申请号：PCT/US2002/012257

申请日：2002-04-16

Applicant: HEWLETT-PACKARD COMPANY

Inventor： CHEN, Zhizhang ,  REGAN, Michael J. ,  BOLF, Brian E. ,  NOVET, Thomas ,  BENNING, Paul ,  JOHNSTONE, Mark Alan ,  RAMAMOORTHI, Sriram

IPC: H01J1/312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射极（50,100）具有形成在电子供给层上的电子供给层（10）和隧穿层（20）。 可选地，在电子供给层上形成绝缘体层（78），并且在其内形成有形成有隧道层的开口。 在隧穿层上形成阴极层（14）以提供电子（16）和/或光子（18）的能量发射（22）的表面。 优选地，对发射极进行退火处理（120,122），从而增加从电子供给层隧穿到阴极层的电子的供应。

公开(公告)号：EP1384244A2

公开(公告)日：2004-01-28

申请号：EP02723897.1

申请日：2002-04-16

Applicant: Hewlett-Packard Company

Inventor： CHEN, Zhizhang ,  REGAN, Michael J. ,  BOLF, Brian E. ,  NOVET, Thomas ,  BENNING, Paul ,  JOHNSTONE, Mark Alan ,  RAMAMOORTHI, Sriram

IPC: H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

公开(公告)号：EP1384244B1

公开(公告)日：2004-10-27

申请号：EP02723897.1

申请日：2002-04-16

Applicant: Hewlett-Packard Company

Inventor： CHEN, Zhizhang ,  REGAN, Michael J. ,  BOLF, Brian E. ,  NOVET, Thomas ,  BENNING, Paul ,  JOHNSTONE, Mark Alan ,  RAMAMOORTHI, Sriram

IPC: H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射器（50,100）具有形成在电子供应层上的电子供应层（10）和隧穿层（20）。 可选地，绝缘体层（78）形成在电子供应层上并且具有在其内形成隧穿层的开口。 在隧穿层上形成阴极层（14）以提供用于电子（16）和/或光子（18）的能量发射（22）的表面。 优选地，发射体经历退火过程（120,122），由此增加从电子供应层隧穿到阴极层的电子供应。