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    EMISSION LAYER FORMED BY RAPID THERMAL FORMATION PROCESS
    2.
    发明申请
    EMISSION LAYER FORMED BY RAPID THERMAL FORMATION PROCESS 审中-公开
    由快速热形成过程形成的排放层

    公开(公告)号：WO2003073480A2

    公开(公告)日：2003-09-04

    申请号：PCT/US2003/005405

    申请日：2003-02-21

    Applicant: HEWLETT-PACKARD COMPANY

    Inventor： CHEN, Zhizhang ,  RAMAMOORTHI, Sriram

    IPC: H01L21/00

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025

    Abstract: An emitter has a rapid thermal process (RTP) formed emission layer (14) of SiO 2 , SiO x N y or combinations thereof. The emission layer formed by rapid thermal processing does not require electro-forming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

    Abstract translation: 发射极具有快速热处理RTP形成的SiO 2，SiO x N y的发射层14或其组合。 通过快速热处理形成的发射层不需要电成形来稳定膜。 RTP生长的膜是稳定的并且从器件到器件表现出均匀的特性。

    EMITTER AND METHOD OF MAKING
    3.
    发明申请
    EMITTER AND METHOD OF MAKING 审中-公开
    发射体和制造方法

    公开(公告)号：WO2003065425A2

    公开(公告)日：2003-08-07

    申请号：PCT/US2003/002955

    申请日：2003-01-30

    Applicant: HEWLETT-PACKARD COMPANY

    Inventor： CHEN, Zhizhang ,  BENNING, Paul, J. ,  RAMAMOORTHI, Sriram ,  NOVET, Thomas

    IPC: H01L21/00

    CPC classification number: B82Y10/00 ,  G11C11/23 ,  H01J1/312 ,  H01J9/025

    Abstract: An emitter (50,100) includes an electron supply (60) and a tunneling layer (20) disposed on the electron supply. A cathode layer (14) is disposed on the tunneling layer. A conductive electrode (53) has multiple layers of conductive material (52,54). The multiple layers include a protective layer (54) disposed on the cathode layer. The conductive electrode has been etched to define an opening (26) thereby exposing a portion of the cathode layer.

    Abstract translation: 发射极（50,100）包括设置在电子源上的电子源（60）和隧穿层（20）。 阴极层（14）设置在隧道层上。 导电电极（53）具有多层导电材料（52,54）。 多层包括设置在阴极层上的保护层（54）。 已经蚀刻导电电极以限定开口（26），从而暴露阴极层的一部分。

    EMITTER AND METHOD OF MAKING
    5.
    发明申请
    EMITTER AND METHOD OF MAKING 审中-公开

    公开(公告)号：WO2003065425A3

    公开(公告)日：2003-08-07

    申请号：PCT/US2003/002955

    申请日：2003-01-30

    Applicant: HEWLETT-PACKARD COMPANY

    Inventor： CHEN, Zhizhang ,  BENNING, Paul, J. ,  RAMAMOORTHI, Sriram ,  NOVET, Thomas

    IPC: H01J1/312

    Abstract: An emitter (50,100) includes an electron supply (60) and a tunneling layer (20) disposed on the electron supply. A cathode layer (14) is disposed on the tunneling layer. A conductive electrode (53) has multiple layers of conductive material (52,54). The multiple layers include a protective layer (54) disposed on the cathode layer. The conductive electrode has been etched to define an opening (26) thereby exposing a portion of the cathode layer.

    TUNNELING EMITTER
    6.
    发明申请
    TUNNELING EMITTER 审中-公开
    隧道式发射机

    公开(公告)号：WO2002089167A2

    公开(公告)日：2002-11-07

    申请号：PCT/US2002/012257

    申请日：2002-04-16

    Applicant: HEWLETT-PACKARD COMPANY

    Inventor： CHEN, Zhizhang ,  REGAN, Michael J. ,  BOLF, Brian E. ,  NOVET, Thomas ,  BENNING, Paul ,  JOHNSTONE, Mark Alan ,  RAMAMOORTHI, Sriram

    IPC: H01J1/312

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

    Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

    Abstract translation: 发射极（50,100）具有形成在电子供给层上的电子供给层（10）和隧穿层（20）。 可选地，在电子供给层上形成绝缘体层（78），并且在其内形成有形成有隧道层的开口。 在隧穿层上形成阴极层（14）以提供电子（16）和/或光子（18）的能量发射（22）的表面。 优选地，对发射极进行退火处理（120,122），从而增加从电子供给层隧穿到阴极层的电子的供应。

    TUNNELING EMITTER
    7.
    发明授权
    TUNNELING EMITTER 有权
    隧道发射器

    公开(公告)号：EP1384244B1

    公开(公告)日：2004-10-27

    申请号：EP02723897.1

    申请日：2002-04-16

    Applicant: Hewlett-Packard Company

    Inventor： CHEN, Zhizhang ,  REGAN, Michael J. ,  BOLF, Brian E. ,  NOVET, Thomas ,  BENNING, Paul ,  JOHNSTONE, Mark Alan ,  RAMAMOORTHI, Sriram

    IPC: H01J1/312 ,  H01J9/02

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

    Abstract: An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

    Abstract translation: 发射器（50,100）具有形成在电子供应层上的电子供应层（10）和隧穿层（20）。 可选地，绝缘体层（78）形成在电子供应层上并且具有在其内形成隧穿层的开口。 在隧穿层上形成阴极层（14）以提供用于电子（16）和/或光子（18）的能量发射（22）的表面。 优选地，发射体经历退火过程（120,122），由此增加从电子供应层隧穿到阴极层的电子供应。

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