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    THERMAL INKJET PRINTHEAD STACK WITH AMORPHOUS THIN METAL PROTECTIVE LAYER
    2.
    发明申请
    THERMAL INKJET PRINTHEAD STACK WITH AMORPHOUS THIN METAL PROTECTIVE LAYER 审中-公开
    热熔喷头与非晶金属保护层堆叠

    公开(公告)号：WO2015005933A1

    公开(公告)日：2015-01-15

    申请号：PCT/US2013/050203

    申请日：2013-07-12

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： ABBOTT, JR., James Elmer ,  AGARWAL, Arun K. ,  PUGLIESE, Roberto A. ,  LONG, Greg Scott ,  HORVATH, Stephen ,  KESZLER, Douglas A. ,  WAGER, John ,  OLSEN, Kristopher ,  MCGLONE, John

    IPC: B41J2/335 ,  B41J2/345

    CPC classification number: B41J2/14112 ,  B41J2/14016 ,  B41J2/14088 ,  B41J2/14129 ,  B41J2/164 ,  B41J2/1646 ,  B41J2/1648 ,  B41J2202/03 ,  B41J2202/11

    Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.

    Abstract translation: 本公开涉及具有非晶金属保护层的热喷墨打印头堆叠，其包括绝缘基板，施加到绝缘基板的电阻器，施加到电阻器的电阻器钝化层以及施加到电阻器的非晶薄金属保护层 电阻钝化层。 非晶态金属保护层可以包含5原子％至90原子％的碳，硅或硼准金属。 该膜还可以包括第一和第二金属，每个包含5原子％至90原子％的钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱， 或铂金。 第二金属与第一金属不同，并且准金属，第一金属和第二金属占非晶金属保护层的至少70原子％。

    WEAR RESISTANT COATING
    5.
    发明申请
    WEAR RESISTANT COATING 审中-公开
    耐磨涂层

    公开(公告)号：WO2016018312A1

    公开(公告)日：2016-02-04

    申请号：PCT/US2014/048917

    申请日：2014-07-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： ABBOTT JR., James Elmer ,  LONG, Greg Scott ,  PUGLIESE, Roberto A.

    IPC: C23C26/00

    CPC classification number: C22C45/10 ,  B41J2/14032 ,  C09D5/38 ,  C22C45/00 ,  C23C26/00 ,  C23C30/00

    Abstract: A wear resistant coating may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and a metalloid. An amorphous metal may comprise at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and a metalloid. A coating may comprise at least one refractory metal, at least two elements selected from periods 4, 5, 6, 9, and 10, and silicon. In some examples, the amorphous metal is TaWSi. In one example, the refractory metals may comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

    Abstract translation: 耐磨涂层可以包括包含至少一种难熔金属，至少两种选自时段4,5,6,9和10的元素的无定形金属和类金属。 无定形金属可以包含至少一种难熔金属，选自周期4,5,6,9和10的至少两种元素，以及准金属。 涂层可以包括至少一种难熔金属，选自时段4,5,6,9和10的至少两种元素，以及硅。 在一些实例中，非晶态金属是TaWSi。 在一个实例中，难熔金属可以包括铌，钼，钽，钨，铼或其组合。

    DETECTING PASSAGE OF A PARTICLE INTO A TARGET LOCATION
    7.
    发明申请
    DETECTING PASSAGE OF A PARTICLE INTO A TARGET LOCATION 审中-公开

    公开(公告)号：WO2021257069A1

    公开(公告)日：2021-12-23

    申请号：PCT/US2020/038156

    申请日：2020-06-17

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： NIELSEN, Jeffrey A. ,  SHKOLNIKOV, Viktor ,  MIDTTVEIT, Erica ,  PUGLIESE, Roberto A. ,  SMITH, Matthew D. ,  DAY, Michael J. ,  HAMMERSTAD, Diane R.

    IPC: B01L3/00 ,  B81B1/00

    Abstract: A method of detecting passage of a particle into a target location includes receiving a sample on a die including a microfluidic chamber, the microfluidic chamber including a microfluidic path coupling a reservoir to a foyer, and moving the sample from the reservoir to the foyer by firing a nozzle fluidically coupled to the foyer. The method further includes detecting passage of a particle of the sample from the reservoir to the foyer via a first sensor disposed within the microfluidic path, and detecting passage of the particle into the target location via a second sensor disposed between the first sensor and the nozzle. The method includes recording in a dispense map, an indication of whether the target location includes a single particle or multiple particles based on signals measured by the first sensor and the second sensor.

    AMORPHOUS THIN FILM STACK
    9.
    发明申请
    AMORPHOUS THIN FILM STACK 审中-公开
    非晶薄膜堆叠

    公开(公告)号：WO2017222547A1

    公开(公告)日：2017-12-28

    申请号：PCT/US2016/039189

    申请日：2016-06-24

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  THE STATE OF OREGON

    Inventor： ABBOTT JR., James Elmer ,  MCGLONE, John M. ,  OLSEN, Kristopher ,  PUGLIESE, Roberto A. ,  LONG, Greg Scott ,  WAGER, John ,  KESZLER, Douglas ,  JOHNSON, T. Stafford ,  STICKLE, William F.

    IPC: B32B15/04

    Abstract: An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at% to 90 at% of a metalloid; 5 at% to 90 at% of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at% of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.

    Abstract translation: 非晶薄膜堆叠可以包括第一层，所述第一层包含组合的金属或准金属，所述金属或准金属包括：5原子％至90原子％的准金属; 5原子％至90原子％的独立选自钛，钒，铬，铁，钴，镍，铌，钼，钌，铑，钯，钽，钨，锇，铱或铂的第一金属和第二金属 。 这三种元素可以占非晶薄膜叠层的至少70原子％。 堆叠可以进一步包括形成在第一层的表面上的第二层。 第二层可以是氧化物层，氮化物层或其组合。 第二层可以具有10埃至200微米的平均厚度，并且厚度变化不大于第二层的平均厚度的15％。

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