Abstract:
In one example in accordance with the present disclosure, a method includes mapping, using post-package repair, an address associated with a first memory row of a computing device to a spare memory row of the computing device, wherein the spare memory row has a memory failure pattern, and reading data from the spare memory row.
Abstract:
In one example in accordance with the present disclosure, a system for backup of a physical memory region of volatile memory. The system may include: a non-volatile memory, a volatile memory, at least one processor to: execute an application that indicates a virtual memory region stored in the volatile memory, wherein the virtual memory region is associated with an application, determine a corresponding physical memory region of the volatile memory for backup based on the indicated virtual memory region, and at least one memory controller to: receive a backup signal for the physical memory region of the volatile memory, and responsive to receiving the backup signal, backup up the physical memory region of the volatile memory to a memory region of the non-volatile memory.
Abstract:
A memory device includes a storage array, a first differential interface coupled to the storage array and including a first bidirectional signal channel to facilitate communication with an upstream device, and a second differential interface coupled to the first differential interface and including a second bidirectional signal channel to facilitate communication with a downstream device.
Abstract:
A volatile memory device includes a memory array of volatile charge storage cells, a counter to track a time since the volatile memory device has received a read/write command and a control element to automatically change the volatile memory device to a lower power state based on the time tracked by the counter.
Abstract:
A memory device includes storage locations to store data, and an internal controller to perform scrubbing of a portion of the data stored by at least one storage location of the storage locations. The memory device also includes an interface to communicate non-deterministically over a communication bus with a memory controller.
Abstract:
Addresses of memory cells that have errors corrected by error correction operations are evaluated to identify a failed row of memory. A post package repair is implemented on the failed row with a method comprising obtaining indications of the error correction operations, logging addresses of memory cells having errors corrected by the error correction operations, evaluating the addresses to identify the failed row, and implementing the post package repair operation on the failed row.
Abstract:
A technique includes determining that a row of memory has been activated at a threshold rate. Upon reaching the threshold rate, a refresh rate for the row of memory and an adjacent row of memory may be increased. Subsequent to the increase, the refresh rate may be returned to a default rate.
Abstract:
Example implementations relate to using a spare memory on a memory module. In example implementations, a memory module may have a plurality of memories, including default memories and a spare memory. A plurality of data buffers on the memory module may select data nibbles from the plurality of memories such that when a default memory is identified as defective, a data nibble is selected from the spare memory and not from the defective default memory. A data nibble selected from the default memory may be in a first position in an output of the memory module when the default memory is functional. A data nibble selected from the spare memory may be in a second position in the output of the memory module.