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公开(公告)号：WO9723808A3
公开(公告)日：1997-08-07
申请号：PCT/US9619953
申请日：1996-12-17
Applicant: HOECHST CELANESE CORP
Inventor： WANAT STANLEY F , RAHMAN M DALIL , KHANNA DINESH N , AUBIN DANIEL P , DIXIT SUNIT S
IPC: G03F7/004 , G03F7/022 , G03F7/023 , H01L21/027 , G03C
CPC classification number: G03F7/0048 , G03F7/022 , G03F7/0236
Abstract: A positive working photosensitive composition suitable for use as a photoresist, which comprises an admixture of at least one water insoluble, aqueous alkali soluble, film forming novolak resin; at least one o-diazonaphthoquinone photosensitizer; and a photoresist solvent mixture comprising a propylene glycol alkyl ether acetate and 3-methyl-3-methoxy butanol and process for producing such a composition.
Abstract translation: 适合用作光致抗蚀剂的光敏正性感光性组合物，其包含至少一种不溶于水的碱溶性水溶性成膜酚醛清漆树脂的混合物; 至少一种邻二氮萘醌光敏剂; 以及包含丙二醇烷基醚乙酸酯和3-甲基-3-甲氧基丁醇的光致抗蚀剂溶剂混合物及其制备方法。
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公开(公告)号：SG52770A1
公开(公告)日：1998-09-28
申请号：SG1996009254
申请日：1992-07-10
Applicant: HOECHST CELANESE CORP
Inventor： DURHAM DANA L , RAHMAN M DALIL
IPC: G03F7/09 , G03F7/11 , H01L21/027
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公开(公告)号：HK63397A
公开(公告)日：1997-05-23
申请号：HK63397
申请日：1997-05-15
Applicant: HOECHST CELANESE CORP , IBM
Inventor： LU PING-HUNG , DAMMEL RALPH R , EIB NICHOLAS KISER , FICNER STANLEY A , KHANNA DINESH N , KLOFFENSTEIN THOMAS J JR , LYONS CHRISTOPHER F , PLAT MARINA , RAHMAN M DALIL
IPC: C08L61/04 , C08L61/06 , G03F7/023 , H01L21/027
Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.
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公开(公告)号：HK117497A
公开(公告)日：1997-09-05
申请号：HK117497
申请日：1997-06-26
Applicant: HOECHST CELANESE CORP
Inventor： RAHMAN M DALIL , DURHAM DANA L
IPC: G03F7/09 , G03F7/11 , H01L21/027
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公开(公告)号：DE69307716T2
公开(公告)日：1997-06-12
申请号：DE69307716
申请日：1993-09-24
Applicant: HOECHST CELANESE CORP , IBM
Inventor： LU PING-HUNG , DAMMEL RALPH R , EIB NICHOLAS KISER , FICNER STANLEY A , KHANNA DINESH N , KLOFFENSTEIN THOMAS J , LYONS CHRISTOPHER F , PLAT MARINA , RAHMAN M DALIL
IPC: C08L61/04 , C08L61/06 , G03F7/023 , H01L21/027
Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.
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Patent Agency Ranking
公开(公告)号：DE69307716D1
公开(公告)日：1997-03-06
申请号：DE69307716
申请日：1993-09-24
Applicant: HOECHST CELANESE CORP , IBM
Inventor： LU PING-HUNG , DAMMEL RALPH R , EIB NICHOLAS KISER , FICNER STANLEY A , KHANNA DINESH N , KLOFFENSTEIN THOMAS J , LYONS CHRISTOPHER F , PLAT MARINA , RAHMAN M DALIL
IPC: C08L61/04 , C08L61/06 , G03F7/023 , H01L21/027
Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.
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公开(公告)号：SG48902A1
公开(公告)日：1998-05-18
申请号：SG1996003596
申请日：1992-12-15
Applicant: HOECHST CELANESE CORP
Inventor： RAHMAN M DALIL , DURHAM DANA L
IPC: C08G8/00 , C08G8/08 , C08G8/10 , G03F7/023 , H01L21/027
Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
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公开(公告)号：SG48719A1
公开(公告)日：1998-05-18
申请号：SG1996000480
申请日：1993-12-20
Applicant: HOECHST CELANESE CORP
Inventor： DURHAM DANA L , AUBIN DANIEL P , RAHMAN M DALIL , DAMMEL RALPH R
Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
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公开(公告)号：HK70897A
公开(公告)日：1997-06-06
申请号：HK70897
申请日：1997-05-29
Applicant: HOECHST CELANESE CORP
Inventor： RAHMAN M DALIL , DURHAM DANA L
IPC: G03F7/32 , H01L21/027
Abstract: The present invention provides a process for producing a developer containing a surfactant which contains a very low level of metal ions and a process for developing light sensitive photoresist compositions, using such a developer, to produce semiconductor devices.
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公开(公告)号：SG48944A1
公开(公告)日：1998-05-18
申请号：SG1996003934
申请日：1993-02-25
Applicant: HOECHST CELANESE CORP
Inventor： RAHMAN M DALIL , DURHAM DANA L
Abstract: The present invention provides methods for producing photoresist compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such photoresist compositions.
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