公开(公告)号：HK63397A

公开(公告)日：1997-05-23

申请号：HK63397

申请日：1997-05-15

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J JR ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：DE69307716T2

公开(公告)日：1997-06-12

申请号：DE69307716

申请日：1993-09-24

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：DE69307716D1

公开(公告)日：1997-03-06

申请号：DE69307716

申请日：1993-09-24

Applicant: HOECHST CELANESE CORP ,  IBM

Inventor： LU PING-HUNG ,  DAMMEL RALPH R ,  EIB NICHOLAS KISER ,  FICNER STANLEY A ,  KHANNA DINESH N ,  KLOFFENSTEIN THOMAS J ,  LYONS CHRISTOPHER F ,  PLAT MARINA ,  RAHMAN M DALIL

IPC: C08L61/04 ,  C08L61/06 ,  G03F7/023 ,  H01L21/027

Abstract: The present invention provides a photoresist composition containing a photosensitive component, a mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0, and a suitable solvent and a method for producing such a photoresist. The present invention also provides semiconductor devices produced using such a photoresist composition and a method for producing such semiconductor devices.

公开(公告)号：SG48719A1

公开(公告)日：1998-05-18

申请号：SG1996000480

申请日：1993-12-20

Applicant: HOECHST CELANESE CORP

Inventor： DURHAM DANA L ,  AUBIN DANIEL P ,  RAHMAN M DALIL ,  DAMMEL RALPH R

IPC: C08G8/00 ,  C08G8/08 ,  C08G8/10 ,  G03F7/023

Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.

公开(公告)号：SG43753A1

公开(公告)日：1997-11-14

申请号：SG1996000568

申请日：1994-02-15

Applicant: HOECHST CELANESE CORP

Inventor： EVANS OWEN B ,  DAMMEL RALPH R

IPC: C08F8/00 ,  C08F257/00 ,  C08L61/10 ,  G03F7/023 ,  G03F7/033 ,  G03F7/004

Abstract: The present invention relates to a novel matrix resin for high-temperature stable photoimageable compositions, in the form of a graft copolymer of monomeric or lower oligomeric hydroxyphenyl units grafted onto a polymer backbone containing reactive sites, to a process for its production and to its use as a matrix resin in photoimageable compositions either in a pure form or in admixture with other polymeric materials.