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    RESIN COMPOSITIONS FOR PHOTORESIST APPLICATIONS
    1.
    发明申请
    RESIN COMPOSITIONS FOR PHOTORESIST APPLICATIONS 审中-公开
    用于光电子应用的树脂组合物

    公开(公告)号：WO1997034197A1

    公开(公告)日：1997-09-18

    申请号：PCT/US1996008202

    申请日：1996-05-31

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  LU, Ping-Hung ,  KOKINDA, Elaine, G. ,  RAHMAN, M., Dalil ,  DAMMEL, Ralph, R. ,  VICARI, Richard ,  SOUNIK, James, R. ,  FICNER, Stanley, A.

    IPC: G03F07/023

    CPC classification number: G03F7/023 ,  G03F7/0233

    Abstract: The invention relates to the use of a mixture of film forming water-insoluble and alkali-soluble novolak resin and thermally stable, alkali-soluble and water-insoluble polyalkylated resin in photosensitive compositions where the polyalkylated resin is a reaction product of a carboxylic acid and at least one substituted phenyl carbinol. The present invention also relates to a method for producing a semiconductor device by coating, imaging and developing the photosensitive composition containing a mixture of novolak resin and the polyalkylated resin of this invention.

    Abstract translation: 本发明涉及在光敏组合物中使用成膜非水溶性和碱溶性酚醛清漆树脂和热稳定的碱溶性和水不溶性多烷基化树脂的混合物，其中多烷基化树脂是羧酸和 至少一种取代的苯甲醇。 本发明还涉及通过涂布，成像和显影含有本发明的酚醛清漆树脂和多烷基化树脂的混合物的感光组合物来制造半导体器件的方法。

    ISOLATION OF NOVOLAK RESIN WITHOUT HIGH TEMPERATURE DISTILLATION AND PHOTORESIST COMPOSITION THEREFROM
    2.
    发明申请
    ISOLATION OF NOVOLAK RESIN WITHOUT HIGH TEMPERATURE DISTILLATION AND PHOTORESIST COMPOSITION THEREFROM 审中-公开
    没有高温蒸馏的NOVOLAK树脂的分离和其中的光电组合物

    公开(公告)号：WO1997020873A1

    公开(公告)日：1997-06-12

    申请号：PCT/US1996018781

    申请日：1996-11-21

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  LU, Ping-Hung

    IPC: C08G08/08

    CPC classification number: G03F7/0236 ,  C08G8/08 ,  C08G8/10 ,  C08G8/20

    Abstract: The present invention provides a method for producing a water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin without high temperature distillation. A method is also provided for producing photoresist composition from such a novolak resin and for producing semiconductor devices using such a photoresist composition.

    Abstract translation: 本发明提供一种通过在不进行高温蒸馏的情况下分离这种酚醛清漆树脂来制备具有一致分子量和光致抗蚀剂组合物性能优异的水不溶性水溶性酚醛清漆树脂的方法。 还提供了用于由这种酚醛清漆树脂制造光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。

    PHOTOACTIVE COMPOUNDS
    3.
    发明申请
    PHOTOACTIVE COMPOUNDS 审中-公开
    光化合物

    公开(公告)号：WO1996024886A1

    公开(公告)日：1996-08-15

    申请号：PCT/US1996001837

    申请日：1996-02-09

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  CANIZE, Anthony ,  FICNER, Stanley, A. ,  LU, Ping-Hung ,  SPIESS, Walter

    IPC: G03F07/022

    CPC classification number: G03F7/022

    Abstract: A photosensitizer comprising a trishydroxyphenylethane 80/20 to 50/50 2,1,5-/2,1,4-diazonaphthoquinone sulfonate, and a trishydroxybenzophenone 0/100 to 20/80 2,1,5-/2,1,4-diazonaphthoquinone sulfate, and a photoresist composition containing such photosensitizer, the photosensitizer being present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; and a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition.

    Abstract translation: 一种光敏剂，其包含三羟基苯基乙烷80/20至50/50 2,1,5- / 2,1,4-重氮萘醌磺酸盐和三羟基二苯甲酮0/100至20/80 2,1,5- / 2,1,4 和含有这种光敏剂的光致抗蚀剂组合物，光敏剂存在于光致抗蚀剂组合物中，其量足以使光致抗蚀剂组合物均匀地光敏化; 和水不溶性的碱溶性酚醛清漆树脂，所述酚醛清漆树脂以足以形成基本均匀的光致抗蚀剂组合物的量存在于光致抗蚀剂组合物中。

    THERMAL TREATMENT PROCESS OF POSITIVE PHOTORESIST COMPOSITION
    4.
    发明申请
    THERMAL TREATMENT PROCESS OF POSITIVE PHOTORESIST COMPOSITION 审中-公开
    积极光电组合物的热处理工艺

    公开(公告)号：WO1997033206A1

    公开(公告)日：1997-09-12

    申请号：PCT/US1997003075

    申请日：1997-02-27

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  DAMMEL, Ralph, R. ,  LU, Ping-Hung ,  SPAK, Mark, A. ,  ALILE, Oghogho

    IPC: G03F07/38

    CPC classification number: G03F7/38

    Abstract: A flash post exposure bake (Flash PEB) process for a diazonaphthoquinone sulfonate ester-novolak positive photoresist is described which offers significant advantages. This process uses a higher than conventional post exposure baking (PEB) temperature (>/=130 DEG C) and a very short baking time (

    Abstract translation: 描述了用于重氮萘醌磺酸酯 - 酚醛清漆型正性光致抗蚀剂的闪光曝光烘烤（闪光PEB）工艺，其具有显着的优点。 该方法使用比传统的后曝光烘烤（PEB）温度（> / = 130℃）和抗蚀剂的非常短的烘烤时间（

    NOVOLAK/POLYHYDROXYSTYRENE COPOLYMER AND PHOTORESIST COMPOSITIONS
    7.
    发明申请
    NOVOLAK/POLYHYDROXYSTYRENE COPOLYMER AND PHOTORESIST COMPOSITIONS 审中-公开
    NOVOLAK /聚羟基苯乙烯共聚物和光催化组合物

    公开(公告)号：WO1995010073A1

    公开(公告)日：1995-04-13

    申请号：PCT/US1994011253

    申请日：1994-10-04

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  KHADIM, Mohammad, A. ,  LU, Ping-Hung

    IPC: G03F07/023

    CPC classification number: C08G8/38 ,  G03F7/0236

    Abstract: A novolak/polyhydroxystyrene copolymer having a structure as shwon in formula (I), in which R = H, -CH3, -CH2CH3 or -CH2CH2CH3, n = 2 to 15, a process for producing such a copolymer, a photoresist composition containing such a copolymer, a process for producing such a photoresist and a process for producing a semiconductor device using such a photoresist.

    Abstract translation: 具有结构式（I）的酚醛清漆/聚羟基苯乙烯共聚物，其中R = H，-CH 3，-CH 2 CH 3或-CH 2 CH 2 CH 3，n = 2至15，制备这种共聚物的方法，含有该共聚物的光致抗蚀剂组合物 共聚物，制造这种光致抗蚀剂的方法以及使用这种光致抗蚀剂制造半导体器件的方法。

    METAL ION REDUCTION IN THE RAW MATERIALS
    8.
    发明申请
    METAL ION REDUCTION IN THE RAW MATERIALS 审中-公开
    金属离子在原材料中的还原

    公开(公告)号：WO1994014863A1

    公开(公告)日：1994-07-07

    申请号：PCT/US1993012406

    申请日：1993-12-20

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  LU, Ping-Hung ,  AUBIN, Daniel, P. ,  DAMMEL, Ralph, R.

    IPC: C08G08/10

    CPC classification number: C08G8/08 ,  G03F7/0236

    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions and a substantially consistent molecular weight. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.

    Abstract translation: 本发明提供了生产具有非常低水平的金属离子和基本上一致的分子量的水不溶性的碱溶性酚醛清漆树脂的方法。 还提供了用于由这种酚醛清漆树脂制造光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。

    NOVOLAK RESIN MIXTURES
    10.
    发明申请
    NOVOLAK RESIN MIXTURES 审中-公开
    NOVOLAK树脂混合物

    公开(公告)号：WO1994007955A1

    公开(公告)日：1994-04-14

    申请号：PCT/US1993009122

    申请日：1993-09-24

    Applicant: HOECHST CELANESE CORPORATION

    Inventor： HOECHST CELANESE CORPORATION ,  LU, Ping-Hung ,  CANIZE, Anthony ,  KHANNA, Dinesh, N. ,  RAHMAN, M., Dalil

    IPC: C08L61/04

    CPC classification number: G03F7/0236 ,  C08L61/04

    Abstract: The present invention provides mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50 % and having dissolution rates which differ by a factor of at least 2.0. A method is also provided for producing such novolak resin mixtures.

    Abstract translation: 本发明提供了至少两种酚醛清漆树脂的混合物，分子量分布重叠率至少为50％，溶解速率至少为2.0。 还提供了用于生产这种酚醛清漆树脂混合物的方法。

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