公开(公告)号：JP2002198540A

公开(公告)日：2002-07-12

申请号：JP2001319918

申请日：2001-10-17

Applicant: HONEYWELL INC

Inventor： HOCKER BENJAMIN G ,  BURNS DAVID W ,  IKINWANDE AKINTUNDE I ,  HORNING ROBERT D ,  MIRZA AMIR R ,  STRATTON THOMAS G ,  SAATHOFF DIEDRICH J ,  CARNEY JAMES K ,  MCPHERSON SCOTT A

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To manufacturing a capacitive sensor device where three wafers are jointed to a pressure pipe. SOLUTION: A first wafer has a metallized layer on the upper surface for forming the upper surface of a diaphragm layer. There is another thermal oxide layer below the diaphragm layer welded to the wafer. There is another metallized layer between the wafer and pressure pipe. On this configuration, a pressure port is provided off the center. Additionally, at least three electric contacts are provided to related layers.

公开(公告)号：JP2002185014A

公开(公告)日：2002-06-28

申请号：JP2001319914

申请日：2001-10-17

Applicant: HONEYWELL INC

Inventor： HOCKER BENJAMIN G ,  BURNS DAVID W ,  IKINWANDE AKINTUNDE I ,  HORNING ROBERT D ,  MIRZA AMIR R ,  STRATTON THOMAS G ,  SAATHOFF DIEDRICH J ,  CARNEY JAMES K ,  MCPHERSON SCOTT A

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To manufacture a sensor, without damaging diaphragms. SOLUTION: A cavity is formed on a surface of a first semiconductor wafer and is almost filled with a material which can be removed without damaging the wafer. Another semiconductor wafer is bonded on the surface of the first semiconductor wafer, an access path to the cavity is formed on the first semiconductor wafer, and the filler is removed from the access path.

公开(公告)号：JP2001223368A

公开(公告)日：2001-08-17

申请号：JP2000376904

申请日：2000-12-12

Applicant: HONEYWELL INC

Inventor： HOCKER BENJAMIN G ,  BURNS DAVID W ,  IKINWANDE AKINTUNDE I ,  HORNING ROBERT D ,  MIRZA AMIR R ,  STRATTON THOMAS G ,  SAATHOFF DIEDRICH J ,  CARNEY JAMES K ,  MCPHERSON SCOTT A

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To improve surface treatment and junction of a wafer. SOLUTION: At least one wafer is immersed in a buffer oxide etchant, and the etchant is rinsed, and the same wafer is immersed in a solution of a hydroxide and H2O2, and the solution is rinsed, and the wafer is brought into contact. Also, a bird's beak upheaval part is removed by an etching processing.

公开(公告)号：AU7060200A

公开(公告)日：2001-03-13

申请号：AU7060200

申请日：2000-08-17

Applicant: HONEYWELL INC

Inventor： YANG WEI ,  KRISHNANKUTTY SUBASH ,  MARSH HOLLY A ,  TORREANO ROBERT C ,  MCPHERSON SCOTT A ,  NOHAVA THOMAS E

IPC: H01L31/0304 ,  H01L31/11 ,  H01L31/00

公开(公告)号：WO0057485A3

公开(公告)日：2001-01-18

申请号：PCT/US0003025

申请日：2000-02-04

Applicant: HONEYWELL INC

Inventor： YANG WEI X ,  NOHAVA THOMAS E ,  MCPHERSON SCOTT A ,  TORREANO ROBERT C ,  KRISHNANKUTTY SUBASH ,  MARSH HOLLY A

IPC: H01L31/00 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/03046 ,  H01L31/03042 ,  H01L31/105 ,  H01L31/1852 ,  Y02E10/544

Abstract: A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, such as sapphire, a transparent AlN buffer and an n-doped AlGaN layer, and to an undoped AlGaN layer where the light is absorbed. The undoped layer is sandwiched between the n-doped AlGaN layer and a p-doped AlGaN layer. Metal contacts are formed on the doped layers to obtain the current caused by the absorbed light in the undoped layer. The mole fractions of the Al and Ga in the undoped and doped layers may be adjusted to obtain a desired wavelength bandpass of light to be detected.

Abstract translation: 由于AlGaN异质结而具有高的响应性和量子效率的p-i-n光电二极管，其中光子在p-n结内被吸收，从而消除由于表面复合和扩散过程引起的载流子损失。 紫外光通过透明基板，例如蓝宝石，透明AlN缓冲层和n掺杂的AlGaN层，以及吸收光的未掺杂的AlGaN层。 未掺杂层夹在n掺杂AlGaN层和p掺杂AlGaN层之间。 在掺杂层上形成金属接触以获得由未掺杂层中的吸收光引起的电流。 可以调节未掺杂和掺杂层中的Al和Ga的摩尔分数，以获得要检测的光的期望的波长带通。

公开(公告)号：WO0113435A3

公开(公告)日：2001-07-12

申请号：PCT/US0022474

申请日：2000-08-17

Applicant: HONEYWELL INC

Inventor： YANG WEI ,  KRISHNANKUTTY SUBASH ,  MARSH HOLLY A ,  TORREANO ROBERT C ,  MCPHERSON SCOTT A ,  NOHAVA THOMAS E

IPC: H01L31/0304 ,  H01L31/11

CPC classification number: H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

Abstract: A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10 . From 360 nm to 400 nm, eight orders of magnitude drop in responsivity were achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

Abstract translation: 在UV透明衬底上依次形成具有AlGaN接触，i-GaN吸收，p-GaN基和n-GaN发射层的GaN / AlGaN异质结双极光电晶体管。 光电晶体管具有大于10 5的增益。 从360纳米到400纳米，响应度已经达到了8个数量级。 光电晶体管具有持久光电导的快速电猝灭，并呈现高黑暗阻抗和无DC漂移。 通过改变淬火周期的频率，可以调整光电晶体管的检测速度以适应特定的应用。 这些结果代表了内部增益紫外检测器，与基于GaN的光导体相比，性能显着提高。