公开(公告)号：WO2005114707A3

公开(公告)日：2006-01-26

申请号：PCT/US2005013497

申请日：2005-04-20

Applicant: HONEYWELL INT INC ,  JIN LEI ,  NAMAN ANANTH ,  LU VICTOR

Inventor： JIN LEI ,  NAMAN ANANTH ,  LU VICTOR

IPC: C23C18/12 ,  H01L21/00 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

CPC classification number: C23C18/122 ,  C23C18/06 ,  C23C18/1212 ,  C23C18/1254 ,  C23C18/1283 ,  H01L21/316 ,  H01L21/76227

Abstract: The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750 °C to about 1000 °C for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.

Abstract translation: 本发明涉及半导体器件制造，更具体地涉及用于在集成电路中形成浅沟槽隔离结构的方法和材料。 通过制备包含含硅预聚物，任选的水和任选的选自鎓化合物和亲核试剂的金属离子的催化剂的组合物来形成二氧化硅介电膜。 然后用该组合物涂覆基材以形成膜。 然后将膜交联以产生凝胶膜。 然后将凝胶膜在约750℃至约1000℃的温度下加热持续有效的时间以去除基本上所有的有机部分并产生基本上无裂纹的二氧化硅介电膜。

公开(公告)号：WO2004068555A3

公开(公告)日：2005-02-03

申请号：PCT/US2004002252

申请日：2004-01-26

Applicant: HONEYWELL INT INC ,  FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

IPC: H01L21/312 ,  H01L21/47 ,  H01L21/76

CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

Abstract translation: 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

公开(公告)号：EP1588411A4

公开(公告)日：2008-10-01

申请号：EP04705341

申请日：2004-01-26

Applicant: HONEYWELL INT INC

Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

IPC: H01L21/312 ,  H01L21/3105 ,  H01L21/768

CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.