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    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    1.
    发明申请
    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
    损坏的电介质材料和膜的修复和恢复

    公开(公告)号：WO2004068555A3

    公开(公告)日：2005-02-03

    申请号：PCT/US2004002252

    申请日：2004-01-26

    Applicant: HONEYWELL INT INC ,  FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    IPC: H01L21/312 ,  H01L21/47 ,  H01L21/76

    CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

    Abstract translation: 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

    ANTIREFLECTIVE COATINGS FOR VIA FILL AND PHOTOLITHOGRAPHY APPLICATIONS AND METHODS OF PREPARATION THEREOF
    2.
    发明申请
    ANTIREFLECTIVE COATINGS FOR VIA FILL AND PHOTOLITHOGRAPHY APPLICATIONS AND METHODS OF PREPARATION THEREOF 审中-公开
    用于通过薄膜和光刻机应用的抗反射涂层及其制备方法

    公开(公告)号：WO2005049681A3

    公开(公告)日：2006-04-20

    申请号：PCT/US2004038517

    申请日：2004-11-17

    Applicant: HONEYWELL INT INC ,  LI BO ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  LU VICTOR ,  LEUNG ROGER ,  FRADKIN MARK A ,  HUSSEIN MAKAREM A ,  GOODNER MICHAEL D

    Inventor： LI BO ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  LU VICTOR ,  LEUNG ROGER ,  FRADKIN MARK A ,  HUSSEIN MAKAREM A ,  GOODNER MICHAEL D

    IPC: G03C1/825 ,  C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03C1/83 ,  G03F7/09

    CPC classification number: C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    Abstract: An absorbing composition is described herein that includes at least one inorganic­based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    Abstract translation: 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    MATERIALS SUITABLE FOR SHALLOW TRENCH ISOLATION
    3.
    发明申请
    MATERIALS SUITABLE FOR SHALLOW TRENCH ISOLATION 审中-公开
    适用于浅层分离的材料

    公开(公告)号：WO2005114707A3

    公开(公告)日：2006-01-26

    申请号：PCT/US2005013497

    申请日：2005-04-20

    Applicant: HONEYWELL INT INC ,  JIN LEI ,  NAMAN ANANTH ,  LU VICTOR

    Inventor： JIN LEI ,  NAMAN ANANTH ,  LU VICTOR

    IPC: C23C18/12 ,  H01L21/00 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

    CPC classification number: C23C18/122 ,  C23C18/06 ,  C23C18/1212 ,  C23C18/1254 ,  C23C18/1283 ,  H01L21/316 ,  H01L21/76227

    Abstract: The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750 °C to about 1000 °C for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.

    Abstract translation: 本发明涉及半导体器件制造，更具体地涉及用于在集成电路中形成浅沟槽隔离结构的方法和材料。 通过制备包含含硅预聚物，任选的水和任选的选自鎓化合物和亲核试剂的金属离子的催化剂的组合物来形成二氧化硅介电膜。 然后用该组合物涂覆基材以形成膜。 然后将膜交联以产生凝胶膜。 然后将凝胶膜在约750℃至约1000℃的温度下加热持续有效的时间以去除基本上所有的有机部分并产生基本上无裂纹的二氧化硅介电膜。

    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    4.
    发明公开
    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
    修复和受损DIELEKTRISCHERMATERIALIEN和电影恢复

    公开(公告)号：EP1588411A4

    公开(公告)日：2008-10-01

    申请号：EP04705341

    申请日：2004-01-26

    Applicant: HONEYWELL INT INC

    Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    IPC: H01L21/312 ,  H01L21/3105 ,  H01L21/768

    CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

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