公开(公告)号：KR20100095392A

公开(公告)日：2010-08-30

申请号：KR20100015018

申请日：2010-02-19

Applicant: HOYA CORP

Inventor： FUKUMOTO TOMONORI ,  MIYOSHI MASAYUKI

IPC: H01L21/027 ,  G03F1/54 ,  G03F1/58 ,  G03F7/20 ,  H01L21/336 ,  H01L29/786

CPC classification number: G03F1/144 ,  G03F1/54 ,  G03F1/76 ,  H01L21/0273

Abstract: PURPOSE: A method for manufacturing a multi gray scale photo mask and a method for manufacturing a semiconductor transistor are provided to suppress a dark defect by preventing the de-lamination of a resist pattern. CONSTITUTION: A semi-transmitting layer(102) and a shielding layer(103) are successively formed on a transmitting substrate(101). A mask blank with a first resist layer is formed on the uppermost layer. A pattern is drawn and developed on the first resist layer. A transmitting unit(111) is formed with the first resist pattern and the shielding layer pattern. A second resist layer is formed to cover the substrate by removing the first resist pattern. A pattern is drawn and developed on the second resist layer and a second resist pattern is formed. A semi-transmitting unit(112) and a shielding unit(113) are formed.

Abstract translation: 目的：提供一种用于制造多灰度光掩模的方法和制造半导体晶体管的方法，以通过防止抗蚀剂图案的去层压来抑制黑暗缺陷。 构成：半透射层（102）和屏蔽层（103）依次形成在透射基板（101）上。 在最上层形成具有第一抗蚀剂层的掩模坯料。 在第一抗蚀剂层上绘制和显影图案。 发送单元（111）形成有第一抗蚀剂图案和屏蔽层图案。 通过去除第一抗蚀剂图案，形成第二抗蚀剂层以覆盖基板。 在第二抗蚀剂层上绘制和显影图案，并形成第二抗蚀剂图案。 形成半透射单元（112）和屏蔽单元（113）。

公开(公告)号：JP2010191310A

公开(公告)日：2010-09-02

申请号：JP2009037359

申请日：2009-02-20

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： FUKUMOTO TOMONORI ,  MIYOSHI MASAYUKI

IPC: G03F1/54 ,  G03F1/58 ,  G03F7/20 ,  H01L21/027 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To suppress a resist pattern from peeling and to suppress generation of black defects.
SOLUTION: A method for manufacturing a multilevel grayscale photomask is provided, including steps of: preparing a mask blank having a semitransparent film and a light-shielding film formed in this order on a light-transmitting substrate and having a first resist film formed on the outermost layer; forming a light-shielding film pattern by etching the light-shielding film using the first resist pattern as a mask and forming a light-transmitting portion by etching the semitransparent film using the first resist pattern or the light-shielding film pattern as a mask; forming a second resist film covering the whole surface of the substrate which is obtained by removing the first resist pattern; and forming a semitransparent portion and a light-shielding portion by etching the light-shielding film pattern using the second resist pattern as a mask. In the step of forming the second resist film, prior to forming the second resist film, an exposed surface of the light-transmitting substrate appearing by the formation of the light-transmitting portion is subjected to a surface treatment with a Si-containing organic compound.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：抑制抗蚀剂图案的剥离并抑制黑色缺陷的产生。 解决方案：提供一种制造多级灰度光掩模的方法，包括以下步骤：制备具有半透明膜和遮光膜的掩模坯料，该遮光膜依次形成在透光基板上并具有第一抗蚀剂膜 形成在最外层; 通过使用所述第一抗蚀剂图案作为掩模蚀刻所述遮光膜来形成遮光膜图案，并且使用所述第一抗蚀剂图案或所述遮光膜图案作为掩模通过蚀刻所述半透明膜来形成透光部; 形成覆盖基板的整个表面的第二抗蚀剂膜，其通过去除第一抗蚀剂图案而获得; 并且通过使用第二抗蚀剂图案作为掩模蚀刻遮光膜图案来形成半透明部分和遮光部分。 在形成第二抗蚀剂膜的步骤中，在形成第二抗蚀剂膜之前，通过形成透光部分出现的透光性基板的露出表面用含Si的有机化合物进行表面处理 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011048353A

公开(公告)日：2011-03-10

申请号：JP2010168385

申请日：2010-07-27

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： YOSHIKAWA YUTAKA ,  FUKUMOTO TOMONORI

IPC: G02F1/1368 ,  G03F1/50 ,  G03F1/68 ,  G03F1/80 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To uniformize an etching rate within a plane of a light-shielding film regardless of the figure of a transfer pattern, to improve the quality of a multi-gradation photomask, and to improve the production yield.
SOLUTION: The multi-gradation photomask has a predetermined transfer pattern including a light-shielding part, a light-transmitting part and a translucent part formed on a transparent substrate, wherein the light-shielding part comprises an etching balancer film having conductivity, a translucent film and a light-shielding film layered in this order on the transparent substrate, the translucent part comprises the etching balancer film and the translucent film layered in this order on the transparent substrate, and the light-transmitting part comprises an exposed part of the transparent substrate.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了使遮光膜的平面内的蚀刻速率均匀化，而与转印图案的图形无关，为了提高多层次光掩模的质量，并且提高了生产率。 解决方案：多层次光掩模具有包括形成在透明基板上的遮光部分，透光部分和透光部分的预定传输图案，其中遮光部分包括具有导电性的蚀刻平衡膜 ，在透明基板上依次层叠的半透明膜和遮光膜，透光部包括在透明基板上依次层叠的蚀刻平衡膜和透光性膜，透光部包括曝光部 的透明基板。 版权所有（C）2011，JPO＆INPIT