公开(公告)号：KR20100095392A

公开(公告)日：2010-08-30

申请号：KR20100015018

申请日：2010-02-19

Applicant: HOYA CORP

Inventor： FUKUMOTO TOMONORI ,  MIYOSHI MASAYUKI

IPC: H01L21/027 ,  G03F1/54 ,  G03F1/58 ,  G03F7/20 ,  H01L21/336 ,  H01L29/786

CPC classification number: G03F1/144 ,  G03F1/54 ,  G03F1/76 ,  H01L21/0273

Abstract: PURPOSE: A method for manufacturing a multi gray scale photo mask and a method for manufacturing a semiconductor transistor are provided to suppress a dark defect by preventing the de-lamination of a resist pattern. CONSTITUTION: A semi-transmitting layer(102) and a shielding layer(103) are successively formed on a transmitting substrate(101). A mask blank with a first resist layer is formed on the uppermost layer. A pattern is drawn and developed on the first resist layer. A transmitting unit(111) is formed with the first resist pattern and the shielding layer pattern. A second resist layer is formed to cover the substrate by removing the first resist pattern. A pattern is drawn and developed on the second resist layer and a second resist pattern is formed. A semi-transmitting unit(112) and a shielding unit(113) are formed.

Abstract translation: 目的：提供一种用于制造多灰度光掩模的方法和制造半导体晶体管的方法，以通过防止抗蚀剂图案的去层压来抑制黑暗缺陷。 构成：半透射层（102）和屏蔽层（103）依次形成在透射基板（101）上。 在最上层形成具有第一抗蚀剂层的掩模坯料。 在第一抗蚀剂层上绘制和显影图案。 发送单元（111）形成有第一抗蚀剂图案和屏蔽层图案。 通过去除第一抗蚀剂图案，形成第二抗蚀剂层以覆盖基板。 在第二抗蚀剂层上绘制和显影图案，并形成第二抗蚀剂图案。 形成半透射单元（112）和屏蔽单元（113）。

公开(公告)号：JP2009244350A

公开(公告)日：2009-10-22

申请号：JP2008088064

申请日：2008-03-28

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： YAMAGUCHI NOBORU ,  MIYOSHI MASAYUKI

IPC: G02F1/1343 ,  G03F1/54 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To provide a multi-tone photomask of which the variation of in-plane transmittance can be reduced, and to provide a method of manufacturing the same.
SOLUTION: In the method of manufacturing the multi-tone photomask, a light-shielding film and a semi-transmissive film transmitting a portion of exposure light are formed on a transparent substrate and are respectively patterned as prescribed to form a transfer pattern including a light-shielding part, a semi-transmissive part transmitting a portion of exposure light, and a light-transmissive part. In this method, the semi-transmissive film and the light-shielding film are patterned by wet etching to form the transfer pattern, and at least part of the semi-transmissive film of the transfer pattern is subjected to surface modification treatment to change an exposure light transmittance of the semi-transmissive film, whereby a transmittance in-plan distribution range of the semi-transmissive part existing in the transfer pattern is reduced.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供可以减小面内透射率的变化的多色调光掩模，并提供其制造方法。 解决方案：在制造多色调光掩模的方法中，在透明基板上形成遮光膜和透射部分曝光光的半透膜，并按规定分别构图以形成转印图案 包括遮光部分，透射部分曝光光的半透射部分和透光部分。 在该方法中，通过湿式蚀刻来对半透膜和遮光膜进行图案化以形成转印图案，并且将转印图案的半透射膜的至少一部分进行表面改性处理以改变曝光 半透射膜的透光率降低，存在于转印图案中的半透射部的透射率的平面内分布范围减小。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011027878A

公开(公告)日：2011-02-10

申请号：JP2009171827

申请日：2009-07-23

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： YANAI RYOICHI ,  MIYOSHI MASAYUKI

IPC: G03F1/58 ,  G03F1/76

Abstract: PROBLEM TO BE SOLVED: To finely regulate transmittance of a translucent part and to select wavelength dependence of the transmittance of the translucent part to exposure light. SOLUTION: In the multi-gradation photomask, a predetermined transfer pattern including a light-shielding part, a light-transmitting part, and a translucent part is formed on a transparent substrate. In the light-shielding part, a translucent film and a light-shielding film are layered on the transparent substrate. In the light-transmitting part, the transparent substrate is exposed. In the translucent part, the translucent film formed on the transparent substrate is exposed. The translucent film includes a first translucent layer and a second translucent layer layered on the first translucent layer, and the film thickness of the second translucent layer constituting the translucent part is reduced to be smaller than that of the second translucent layer constituting the light-shielding part. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了微调半透明部分的透射率并且选择透光部分的透射率对曝光光的波长依赖性。 解决方案：在多层次光掩模中，在透明基板上形成包括遮光部分，透光部分和半透明部分的预定传送图案。 在遮光部中，在透明基板上层叠半透明膜和遮光膜。 在透光部中，露出透明基板。 在半透明部分中，露出形成在透明基板上的半透明膜。 半透明膜包括在第一半透明层上层叠的第一半透明层和第二透明层，构成透光部的第二透光性层的膜厚比构成遮光性的第二透光性层的膜厚小 部分。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010191310A

公开(公告)日：2010-09-02

申请号：JP2009037359

申请日：2009-02-20

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： FUKUMOTO TOMONORI ,  MIYOSHI MASAYUKI

IPC: G03F1/54 ,  G03F1/58 ,  G03F7/20 ,  H01L21/027 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To suppress a resist pattern from peeling and to suppress generation of black defects.
SOLUTION: A method for manufacturing a multilevel grayscale photomask is provided, including steps of: preparing a mask blank having a semitransparent film and a light-shielding film formed in this order on a light-transmitting substrate and having a first resist film formed on the outermost layer; forming a light-shielding film pattern by etching the light-shielding film using the first resist pattern as a mask and forming a light-transmitting portion by etching the semitransparent film using the first resist pattern or the light-shielding film pattern as a mask; forming a second resist film covering the whole surface of the substrate which is obtained by removing the first resist pattern; and forming a semitransparent portion and a light-shielding portion by etching the light-shielding film pattern using the second resist pattern as a mask. In the step of forming the second resist film, prior to forming the second resist film, an exposed surface of the light-transmitting substrate appearing by the formation of the light-transmitting portion is subjected to a surface treatment with a Si-containing organic compound.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：抑制抗蚀剂图案的剥离并抑制黑色缺陷的产生。 解决方案：提供一种制造多级灰度光掩模的方法，包括以下步骤：制备具有半透明膜和遮光膜的掩模坯料，该遮光膜依次形成在透光基板上并具有第一抗蚀剂膜 形成在最外层; 通过使用所述第一抗蚀剂图案作为掩模蚀刻所述遮光膜来形成遮光膜图案，并且使用所述第一抗蚀剂图案或所述遮光膜图案作为掩模通过蚀刻所述半透明膜来形成透光部; 形成覆盖基板的整个表面的第二抗蚀剂膜，其通过去除第一抗蚀剂图案而获得; 并且通过使用第二抗蚀剂图案作为掩模蚀刻遮光膜图案来形成半透明部分和遮光部分。 在形成第二抗蚀剂膜的步骤中，在形成第二抗蚀剂膜之前，通过形成透光部分出现的透光性基板的露出表面用含Si的有机化合物进行表面处理 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010139876A

公开(公告)日：2010-06-24

申请号：JP2008317384

申请日：2008-12-12

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NODA EISHIRO ,  MIYOSHI MASAYUKI

IPC: B05C3/18 ,  B05C5/02 ,  B05C11/105 ,  B05D1/26 ,  B05D7/00 ,  G03F1/50 ,  G03F1/68 ,  G03F1/82 ,  G03F7/16 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask blank, suppressing a changes in thickness of a resist film, and also to provide a method for manufacturing a photomask, and a coating device.
SOLUTION: In the method for manufacturing a photomask blank, a resist liquid 21 elevated by a coating means 2 that includes a liquid tank 20 and a coating nozzle 22 elevating the resist liquid 21 reserved in the liquid tank 20 by a capillary phenomenon, is brought into contact with the objective surface 10a to be coated of a substrate 10 facing downward, and the coating nozzle 22 and the substrate 10 are relatively moved to form a resist film 21 on the objective surface 10a of the substrate 10. The resist film is formed by the coating means 2 having at least a liquid surface area of the resist liquid 21 in the liquid tank 20, the liquid surface area necessary to control the change in thickness of the resist film to be within a tolerance, which is determined based on the relationship between a height reduction d of the surface of the resist liquid in the liquid tank 20, the height reduced by the consumption of the resist liquid 21 by application of the resist liquid 21 on the substrate 10, and the change in thickness of the resist film formed on the coated surface 10a of the substrate 10.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造光掩模坯料的方法，抑制抗蚀剂膜的厚度变化，以及提供一种制造光掩模的方法和涂覆装置。 解决方案：在制造光掩模坯料的方法中，由涂覆装置2升高的抗蚀剂液体21，其包括液体罐20和涂覆喷嘴22，其通过毛细管现象提升保留在液体罐20中的抗蚀剂液体21 与要面向下方的基板10的待涂覆的物镜10a接触，并且涂布喷嘴22和基板10相对移动，以在基板10的物镜表面10a上形成抗蚀剂膜21.抗蚀剂 膜由具有液体槽20中的抗蚀剂液体21的至少液面积的涂布装置2形成，控制抗蚀剂膜的厚度变化所必需的液面积在公差以内 基于液体罐20中的抗蚀剂液体的表面的高度减小度d之间的关系，通过将抗蚀剂液体21施加在基材上而消除抗蚀剂液体21而降低的高度 te 10，以及形成在基板10的涂覆表面10a上的抗蚀剂膜的厚度变化。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010085863A

公开(公告)日：2010-04-15

申请号：JP2008256781

申请日：2008-10-01

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  MIYOSHI MASAYUKI ,  YAMAGUCHI NOBORU ,  YOSHIDA KOICHIRO

IPC: G03F1/00 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To provide a multilevel gradation photomask to be used for manufacturing a TFT substrate or the like, wherein even when fluctuation in the residual film thickness of a resist exposed through a transflective part is adjusted by a photoirradiation amount, less influence is given to the pattern in another part. SOLUTION: The multilevel gradation photomask 10 comprises a glass substrate 11, a light shielding part 12 where a light-shielding film is formed on the glass substrate 11, a transflective part 13 where a transflective film is formed, a light-transmitting part 14 where neither the light-shielding film nor the transflective film is formed, and a light-shielding part periphery 15 where a transflective film having a prescribed width is formed in a periphery of the light-shielding part 12, the periphery functioning as a boundary against the light-transmitting part 14. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供用于制造TFT基板等的多级渐变光掩模，其中即使通过光照射量调节通过透反射部件曝光的抗蚀剂的残留膜厚度的波动， 对另一部分的模式的影响较小。 解决方案：多级渐变光掩模10包括玻璃基板11，在玻璃基板11上形成有遮光膜的遮光部12，形成透反射膜的透反射部13，透光性 在遮光部12的周围形成具有规定宽度的半透半反射膜的遮光部周边15，作为遮光膜12的外周部的遮光部周边15， 边界相对于透光部分14.版权所有（C）2010，JPO＆INPIT