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    4.
    发明专利
    未知

    公开(公告)号：DE10349087B4

    公开(公告)日：2009-02-26

    申请号：DE10349087

    申请日：2003-10-22

    Applicant: HOYA CORP

    Inventor： MITSUI MASARU ,  SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

    IPC: C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027

    Abstract: A half-tone film is formed on a transparent substrate (6) by sputtering reactive gas on substrate using a target (5) containing metal and silicon, such that a desired half-tone film optical characteristic is obtained, irrespective of change of the flow amount of gas. The reactive gas is oxygen, carbon, nitrogen or fluorine. An Independent claim is also included for a half-tone-type phase shift mask blank.

    マスクブランクの製造方法
    6.
    发明专利
    マスクブランクの製造方法 有权
    生产面膜的方法

    公开(公告)号：JP2014197149A

    公开(公告)日：2014-10-16

    申请号：JP2013073333

    申请日：2013-03-29

    Applicant: Hoya株式会社 ,  Hoya Corp ,  Hoya株式会社

    Inventor： ISHIHARA SHIGENORI ,  KOIKE KESAHIRO ,  KIKUCHI TOSHIHARU

    IPC: G03F1/50 ,  C03C17/245 ,  C23C14/06 ,  G03F1/54 ,  H01L21/027

    Abstract: 【課題】透光性基板に含まれる水素分子濃度をより簡単に識別することのできる透光性基板を用いたマスクブランクの製造方法を提供する。【解決手段】本発明は、透光性基板の表面に薄膜を形成するマスクブランクの製造方法であり、水素分子濃度がその外観から識別可能である透光性基板を用意する工程と、スパッタリング法により前記薄膜を形成する工程と、アニール処理工程が含まれており、前記薄膜を形成する工程において、スパッタリング条件またはアニール処理条件を基板から識別される水素分子濃度に応じて設定すること、を特徴とする。【選択図】図1

    Abstract translation: 要解决的问题：提供一种使用透光性基板制造掩模坯料的方法，该透光性基板能够更容易地确定透光性基板中所含的氢分子的浓度。解决方案：制造用于在透明基板上形成薄膜的掩模坯料的方法 半透明基板的表面包括制备透光性基板的步骤，该透光性基板能够从外观确定氢分子的浓度，通过溅射形成薄膜的步骤以及进行退火处理的步骤。 在形成薄膜的步骤中，溅射条件或退火处理条件根据从基板的外观确定的氢分子的浓度来设定。

    Sputtering target, and mask blank manufacturing method using the same
    7.
    发明专利
    Sputtering target, and mask blank manufacturing method using the same 有权
    溅射目标和使用其的掩模制造方法

    公开(公告)号：JP2005200682A

    公开(公告)日：2005-07-28

    申请号：JP2004006349

    申请日：2004-01-14

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

    IPC: C23C14/34 ,  G03F1/50 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

    Abstract: PROBLEM TO BE SOLVED: To provide a sputtering target or the like capable of preventing deviation in the direction of gravity when used for the sputter of the inclined system, and reducing abnormality attributable to the deviation.
    SOLUTION: In the sputtering target 2 having a backing plate 5 and a target material 4 joined with the backing plate 5 by bonding agent 30, the target material 4 has a projecting shape shown in the figure, and the backing plate 5 is fitted to the projecting shape of the target material 4. When the sputtering target is inclined, the target material is not moved in the direction of gravity.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种当用于倾斜系统的溅射时能够防止重力方向上的偏差的溅射靶等，并且减少归因于偏差的异常。 解决方案：在具有背板5和通过粘合剂30与背板5连接的靶材4的溅射靶2中，目标材料4具有如图所示的突出形状，背板5是 装配到目标材料4的突出形状。当溅射靶倾斜时，目标材料不沿重力方向移动。 版权所有（C）2005，JPO＆NCIPI

    Method for manufacturing mask blank
    8.
    发明专利
    Method for manufacturing mask blank 有权
    制造掩蔽层的方法

    公开(公告)号：JP2013189684A

    公开(公告)日：2013-09-26

    申请号：JP2012056838

    申请日：2012-03-14

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： ISHIHARA SHIGENORI ,  ISHII TSUTOMU ,  SEDO YUSUKE ,  SUZUKI HISAYUKI

    IPC: C23C14/06 ,  C23C14/34 ,  G03F1/54

    Abstract: PROBLEM TO BE SOLVED: To prevent any increase of the number of particles attributable to deposits fallen from a non-erosion region of a sputtering target during the film deposition by the sputtering method.SOLUTION: This method for manufacturing a mask blank having a thin film on a main surface of a substrate, includes a step of obtaining the size of an erosion area of a sputtered surface of a target for each of a plurality of layers when forming each of the plurality of layers by the sputtering method while the thin film contains the plurality of layers to be respectively formed by the sputtering method by using the same target, a step of selecting the target having the sputtered surface of the same size or the smaller size than that of the erosion area of the minimum size out of the plurality of erosion areas, and a step of respectively forming the plurality of layers by the sputtering method by using the selected target.

    Abstract translation: 要解决的问题：为了防止通过溅射法在膜沉积期间从沉积物的非侵蚀区域引起的沉积物的数量的任何增加。解决方案：该制造具有薄膜的掩模坯料的方法 在基板的主表面上，包括当通过溅射法形成多个层中的每一层时获得靶层的溅射表面的大小的步骤，同时薄膜含有 通过使用相同的靶分别通过溅射法形成的多个层;选择具有与多个相同尺寸的溅射表面相同尺寸或​​更小尺寸的靶的步骤， 的侵蚀区域，以及通过使用所选择的靶材通过溅射法分别形成多个层的步骤。

    Method for manufacturing halftone phase shift mask blank
    9.
    发明专利
    Method for manufacturing halftone phase shift mask blank 有权

    公开(公告)号：JP2004144900A

    公开(公告)日：2004-05-20

    申请号：JP2002308345

    申请日：2002-10-23

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： MITSUI MASARU ,  SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

    IPC: C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027 ,  G03F1/08

    CPC classification number: G03F1/32 ,  C23C14/0641 ,  G03F1/68

    Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a halftone phase shift mask blank with uniform quality and little scatter in the optical characteristics in mass-production.
    SOLUTION: The method for manufacturing a halftone phase shift mask blank having a phase shift film containing at least one layer of a halftone film on a transparent substrate includes a process of forming the halftone film on the transparent substrate by reactive sputtering in an atmosphere containing a reactive gas by using a target containing metal and silicon. The process of forming the halftone film by the reactive sputtering is carried out under the condition of the flow rate of the reactive gas selected from a region where the discharge characteristics are stable against changes in the flow rate of the reactive gas, and by using a target with a selected composition ratio of the metal and silicon so as to obtain desired optical characteristics of the halftone film.
    COPYRIGHT: (C)2004,JPO

    Mask blank, mask for transfer, and manufacturing method of the same
    10.
    发明专利
    Mask blank, mask for transfer, and manufacturing method of the same 有权
    掩蔽罩，转移掩模及其制造方法

    公开(公告)号：JP2014194547A

    公开(公告)日：2014-10-09

    申请号：JP2014086232

    申请日：2014-04-18

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

    IPC: G03F1/32 ,  C23C14/06 ,  H01L21/027

    CPC classification number: G03F1/32 ,  G03F1/26 ,  G03F1/38 ,  G03F1/54

    Abstract: PROBLEM TO BE SOLVED: To provide a mask blank, a manufacturing method of the mask blank, or the like, in which in-plane uniformity of transmittance falls within a predetermined allowable range after heat treatment and forced cooling treatment.SOLUTION: There is provided a mask blank in which a translucent substrate 1 includes a thin film 2 for forming a transfer pattern is on its main surface. The thin film 2 is made of a material which consists of silicon and nitrogen or a material in which one or more elements selected from a semimetal element, a non-metal element and rare gas is contained in the material which consists of silicon and nitrogen, the thin film 2 has, on its surface layer, an oxide layer 22 which has larger oxygen content than a thin film 21 in a region other than the surface layer, the thin film 2 is formed such that thickness of the central part is thicker than thickness of a periphery part on a main surface side, and the oxide layer 22 is formed such that thickness of the central part is thicker than thickness of a periphery part on the main surface side.

    Abstract translation: 要解决的问题：提供掩模坯料，掩模坯料的制造方法等，其中透光率的面内均匀性落在热处理和强制冷却处理之后的预定允许范围内。解决方案：提供 其中透光性基板1包括用于形成转印图案的薄膜2的掩模坯料在其主表面上。 薄膜2由由硅和氮组成的材料或在由硅和氮组成的材料中包含选自半金属元素，非金属元素和稀有气体中的一种或多种元素的材料制成， 薄膜2在其表面层上具有在除了表面层以外的区域中具有比薄膜21更大的氧含量的氧化物层22，形成薄膜2，使得中心部分的厚度比 主表面侧的周边部分的厚度，并且氧化物层22形成为使得中心部分的厚度比主表面侧上的周边部分的厚度更厚。

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