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    Graytone mask blank, method of manufacturing graytone mask and graytone mask, and pattern transfer method
    1.
    发明公开
    Graytone mask blank, method of manufacturing graytone mask and graytone mask, and pattern transfer method 审中-公开
    GRAYTONE MASK BLANK，制造GRAYTONE MASK和GRAYTONE MASK的方法和图案转移方法

    公开(公告)号：KR20100061435A

    公开(公告)日：2010-06-07

    申请号：KR20100046664

    申请日：2010-05-18

    Applicant: HOYA CORP

    Inventor： SANO MICHIAKI ,  IMURA KAZUHISA ,  MITSUI MASARU

    IPC: G03F1/50 ,  G03F1/54 ,  G03F1/76 ,  H01L21/027

    CPC classification number: G03F1/54 ,  G03F1/08 ,  G03F1/32 ,  G03F1/50 ,  G03F1/76 ,  H01L21/0276

    Abstract: PURPOSE: A gray tone mask blank, a manufacturing method of a gray tone mask using thereof, the gray tone mask, and a pattern transferring method using thereof are provided to obtain an accurate CD of a pattern formed on a mask, and to reduce the change of the pattern. CONSTITUTION: A gray tone mask blank comprises the following: a light-shielding layer(25) pattern formed on a transparent substrate(24); a semi-transparent layer(26) in the front side of the light-shielding layer; and a resist film(27) formed on the semi-transparent layer. The composition of the light-shielding layer changes to the film thickness direction. The surface reflection ratio of the resist film reduces for a laser lithography light with the wavelength of 300~450 nanometers.

    Abstract translation: 目的：提供灰色调掩模空白，使用其的灰度调色掩模的制造方法，灰度色调掩模和使用其的图案转印方法，以获得在掩模上形成的图案的精确的CD，并且减少 模式的变化 构成：灰色掩模坯料包括：形成在透明基板（24）上的遮光层（25）图案; 在遮光层的前侧的半透明层（26）; 和形成在半透明层上的抗蚀剂膜（27）。 遮光层的组成变为膜厚方向。 对于波长为300〜450纳米的激光光刻光，抗蚀剂膜的表面反射率降低。

    Verfahren zur Herstellung einer Halbton-Phasenverschiebungsmaske
    4.
    发明专利
    Verfahren zur Herstellung einer Halbton-Phasenverschiebungsmaske 未知

    公开(公告)号：DE10165081B4

    公开(公告)日：2014-04-30

    申请号：DE10165081

    申请日：2001-09-12

    Applicant: HOYA CORP

    Inventor： NOZAWA OSAMU ,  MITSUI MASARU ,  MITSUI HIDEAKI

    IPC: G03F1/32 ,  B32B17/06 ,  C03C17/22 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027

    Abstract: Verfahren zur Herstellung einer Halbton-Phasenverschiebungsmaske mit einem auf einem transparenten Substrat (100) erzeugten Muster aus einem transluzenten Film (300a), wobei der transluzente Film (300a) Silicium und mindestens eines von Stickstoff und Sauerstoff enthält, wobei das Verfahren die thermische Behandlung des Musters aus dem transluzenten Film (300a) umfasst, durchgeführt unter einer Inertgasatmosphäre bei mehr als 150°C nach der Erzeugung des Musters aus dem transluzenten Film (300a), so dass die Druckspannung des transluzenten Films (300a) verringert wird.

    6.
    发明专利
    未知

    公开(公告)号：DE10393131T5

    公开(公告)日：2005-08-11

    申请号：DE10393131

    申请日：2003-08-19

    Applicant: HOYA CORP TOKIO TOKYO

    Inventor： MITSUI MASARU

    IPC: A61N5/00 ,  C23C14/00 ,  C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  G03F1/24 ,  G03F1/32 ,  G03F1/68 ,  G03F9/00 ,  G21G5/00 ,  H01L21/027 ,  G03F1/08

    Abstract: To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.

    7.
    发明专利
    未知

    公开(公告)号：DE10349087B4

    公开(公告)日：2009-02-26

    申请号：DE10349087

    申请日：2003-10-22

    Applicant: HOYA CORP

    Inventor： MITSUI MASARU ,  SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

    IPC: C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027

    Abstract: A half-tone film is formed on a transparent substrate (6) by sputtering reactive gas on substrate using a target (5) containing metal and silicon, such that a desired half-tone film optical characteristic is obtained, irrespective of change of the flow amount of gas. The reactive gas is oxygen, carbon, nitrogen or fluorine. An Independent claim is also included for a half-tone-type phase shift mask blank.

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