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公开(公告)号：JPS59117273A
公开(公告)日：1984-07-06
申请号：JP22640582
申请日：1982-12-24
Applicant: Hoya Corp
Inventor： KASAMA KOUTAROU
CPC classification number: H01L31/1884 , Y02E10/50
Abstract: PURPOSE:To improve mass productivity, by setting an oxygen gas concentration so that an oxide layer is not formed on the surface of a target, forming a film by reactive sputtering, thereby facilitating control of sputtering condition. CONSTITUTION:With a transparent conductive metal material as a target, a sputtering gas is made to be mixed gas including an inactive gas and oxygen gas. The surface of the target is set to be a state of a layer that is not oxidized by the concentration of the oxygen gas. A film of a metal material is formed on a transparent substrate by reactive sputtering. Then heat treatment is performed in air or oxidizing atmosphere at 300-500 deg.C. Then the film is cooled. Indium, tin, or the like is used as a metal material for the transparent conductive film. Argon or the like is used as an inactive gas. Soda lime glass or the like is used for a transparent substrate. Oxygen gas or the like is used as oxidizing atmosphere.
Abstract translation: 目的：为了提高质量生产率，通过设定氧气浓度使得在靶的表面上不形成氧化物层，通过反应溅射形成膜，从而有利于控制溅射条件。 构成：以透明导电性金属材料为目标，将溅射气体作为包含惰性气体和氧气的混合气体。 靶的表面被设定为不被氧气浓度氧化的层的状态。 通过反应溅射在透明基板上形成金属材料膜。 然后在300-500℃的空气或氧化气氛中进行热处理。 然后将薄膜冷却。 铟，锡等用作透明导电膜的金属材料。 氩气等用作惰性气体。 钠钙玻璃等用于透明基材。 使用氧气等作为氧化气氛。
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公开(公告)号：JPS59139033A
公开(公告)日：1984-08-09
申请号：JP1290483
申请日：1983-01-31
Applicant: Hoya Corp
Inventor： KASAMA KOUTAROU , USHIDA MASAO
Abstract: PURPOSE:To obtain antistatic effect and reflection preventive effect of a photomask prepd. by plasma etching using chlorine or similar gas by providing a light shielding metallic film of a specific element on a glass base plate and forming a reflection preventive film of an oxide of a specified element thereon. CONSTITUTION:A light shielding metallic film 3 is formed on a glass base plate 1 using Si, Ge, Sb, or Au. A reflection preventive film 4 is formed further on the film 3 using an oxide of Si, Ge, or Sb. On one hand, a transparent conductive film 2 is formed using an oxide of Fe, In, Re, Pb, Zn, Ni, or Co between the base plate 1 and the film 3. The photomask in accordance with this constitution is easily etched at the film 3 and the film 4 by the plasma etching using chlorine or similar gas, but the conductive film 2 has resistance to the etching. Easily etchable films 3 and 4 serve as masking material, and hardly etchable conductive film 2 has antistatic effect, therefore, the breakage due to electric charge and multiple reflection are both prevented.
Abstract translation: 目的：获得光掩模制剂的抗静电效果和防反射效果。 通过在玻璃基板上设置特定元素的遮光金属膜并在其上形成特定元素的氧化物的防反射膜，通过使用氯或类似气体的等离子体蚀刻。 构成：使用Si，Ge，Sb或Au在玻璃底板1上形成遮光金属膜3。 使用Si，Ge或Sb的氧化物在膜3上进一步形成防反射膜4。 一方面，使用在基板1和膜3之间的Fe，In，Re，Pb，Zn，Ni或Co的氧化物形成透明导电膜2.根据该结构的光掩模容易在 膜3和膜4通过使用氯气或类似气体的等离子体蚀刻，但导电膜2具有耐蚀刻性。 易于蚀刻的膜3和4用作掩模材料，并且几乎不可蚀刻的导电膜2具有抗静电效果，因此，防止了由于电荷和多次反射引起的断裂。
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公开(公告)号：JPS5998407A
公开(公告)日：1984-06-06
申请号：JP20915082
申请日：1982-11-29
Applicant: HOYA CORP
Inventor： KASAMA KOUTAROU , MITSUI MASARU
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公开(公告)号：JPS59139034A
公开(公告)日：1984-08-09
申请号：JP1290583
申请日：1983-01-31
Applicant: Hoya Corp
Inventor： KASAMA KOUTAROU , USHIDA MASAO
Abstract: PURPOSE:To obtain antistatic effect and reflection preventive effect of a photomask prepd. by plasma etching using fluorine or similar gas by providing a light shielding metallic film of a specified element on a glass base plate, forming further a reflection preventive layer of an oxide of a specified element thereon. CONSTITUTION:A light shielding metallic film 3 is provided on a glass base plate 1 using Se, Ge, Re, Ir, V or Ru, and a reflection preventive film 4 is formed thereon using an oxide of Se, Ge, Re, Ir, or V. Further, a transparent conductive film 2 is provided between the base plate 1 and the film 3 using an oxide of Fe, Cr, Pb or Pb.Cr. The films 3 and 4 easily etched, whereas the conductive film 2 has a resistance. Therefore, the easily etchable films 3 and 4 serve as masking material, and the hardly etchable conductive film 2 prevents the breakage due to electric charge and multiple reflection because of its antistatic effect.
Abstract translation: 目的：获得光掩模制剂的抗静电效果和防反射效果。 通过在玻璃基板上设置特定元素的遮光金属膜，通过使用氟或类似气体的等离子体蚀刻，进一步形成其上指定元素的氧化物的防反射层。 构成：使用Se，Ge，Re，Ir，V或Ru在玻璃基板1上设置遮光金属膜3，使用Se，Ge，Re，Ir的氧化物在其上形成防反射膜4， 或V。此外，使用Fe，Cr，Pb或PbCr的氧化物在基板1和膜3之间设置透明导电膜2。 膜3和4容易蚀刻，而导电膜2具有电阻。 因此，易于蚀刻的膜3和4用作掩模材料，并且难以蚀刻的导电膜2由于其抗静电效果而防止由于电荷和多次反射而导致的断裂。
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