公开(公告)号：JPH11316453A

公开(公告)日：1999-11-16

申请号：JP6092499

申请日：1999-03-08

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  OKADA KIMIHIRO ,  SUDA HIDEKI

IPC: H01L21/027 ,  G03F1/32 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part for light excellent in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity. SOLUTION: The producing method of a phase shift mask includes a process for forming a semitransmitting thin film 3a for light as a thin film, which constitutes a semitransparent part on a transparent substrate 1 and a process for forming a resist pattern on the semitransparent thin film 3a. The semitransparent thin film 3a consists of a material essentially comprising nitrogen, metal and silicon as the main structural elements and contains 34 to 60 at.% silicon. The resist pattern formed on the thin film 3a is used as a mask for etching the semitransparent thin film 3a to obtain the desired pattern of the thin film, and then the thin film is subjected to sulfuric acid cleaning.

公开(公告)号：JPH07248609A

公开(公告)日：1995-09-26

申请号：JP4111794

申请日：1994-03-11

Applicant: HOYA CORP

Inventor： OKADA KIMIHIRO

IPC: G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE:To provide a phase shift mask blank forming a single film structure and capable of setting the transmission factor at a prescribed film thickness generating a phase shift in a wide range by providing a specific light half- transmission film for forming a light half-transmission section. CONSTITUTION:This phase shift mask blank is provided with a light half- transmission film 2a transmitting the light having the intensity not practically contributing to an exposure on a transparent substrate 1, and the light half- transmission film 2a is made of a film containing at least one kind of fluorine, carbon, and nitrogen and chromium, i.e., the phase shift mask blank is one on which the light half-transmission film 2a is formed on the transparent substrate 1. A phase shift mask is applied with patterning for removing part of the light half-transmission film 2a of the phase shift mask blank according to a prescribed pattern, and a mask pattern constituted of a light half- transmission section 2 and a light transmission section 3 is formed.

公开(公告)号：JPH10148929A

公开(公告)日：1998-06-02

申请号：JP9804597

申请日：1997-03-31

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  OKADA KIMIHIRO ,  SUDA HIDEKI

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To obtain a phase shift mask having excellent film characteristics, such as weatherability, light resistance, electrical conductivity and refractive index by constituting light translucent parts of thin films consisting of materials consisting of nitrogen, metals and silicon as main constituting elements and specifying the content of the silicon to atom ratios of a specific range. SOLUTION: The mask patterns to be formed on the transparent substrate 1 of the mask for exposure of fine patterns comprises light transparent parts 2 to allow the transmission of the light of the intensity contributing to the exposure and light translucent parts 3 to allow the transmission of the light of the intensity not contributing to the exposure. The phase of the light transmitted through the light translucent parts 3 is shifted to vary the phase of the light transmitted through the light translucent parts 3 from the phase of the light transmitted through the light transparent parts 2, by which the light rays transmitted near the boundaries of the light translucent parts 3 and the light transparent parts 2 are negated with each other. The light translucent parts 3 are composed of the thin films consisting of materials contg. the nitrogen, metals and silicon as the main constituting elements and the content of the silicon is specified to 34 to 60atom.%.

公开(公告)号：JPH11316454A

公开(公告)日：1999-11-16

申请号：JP6092599

申请日：1999-03-08

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  OKADA KIMIHIRO ,  SUDA HIDEKI

IPC: H01L21/027 ,  G03F1/32 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part which is superior in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity, and to provide a producing method of a phase shift mask blank. SOLUTION: By the producing method of a phase shift mask blank, a transparent substrate 1 is disposed in an atmosphere of gaseous mixture, containing nitrogen, and a semitransparent thin film 3a comprising nitrogen, metal and silicon as the main structural elements, is formed on the transparent substrate 1 by DC sputtering of a mixture target of metal and silicon. The amount of silicon in the mixture target is 70 to 95 mol.%.