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1.发明专利
公开(公告)号：DE112005001588B4
公开(公告)日：2021-02-25
申请号：DE112005001588
申请日：2005-07-08
Applicant: HOYA CORP
Inventor： KOMINATO ATSUSHI , YAMADA TAKEYUKI , SAKAMOTO MINORU , HASHIMOTO MASAHIRO
Abstract: Durch Erhöhen der Ätzrate einer lichtabschirmenden Schicht kann die Trockenätzzeit verkürzt werden, so dass der Verlust einer Resistschicht vermindert wird. Dadurch kann die Dicke der Resistschicht (auf 300 nm oder weniger) vermindert werden, so dass eine Musterauflösung und eine Mustergenauigkeit (CD-Genauigkeit) verbessert werden können. Außerdem werden durch Verkürzen der Trockenätzzeit ein Fotomaskenrohling und ein Fotomaskenherstellungsverfahren bereitgestellt, durch die ein lichtabschirmendes Schichtmuster mit einer ausgezeichneten Querschnittsform ausgebildet werden kann. Ein Fotomaskenrohling mit einer lichtabschirmenden Schicht auf einem optisch transparenten Substrat ist ein Maskenrohling für einen Trockenätzprozess, der für ein Fotomaskenherstellungsverfahren zum Strukturieren der lichtabschirmenden Schicht durch den Trockenätzprozess unter Verwendung eines auf der lichtabschirmenden Schicht ausgebildeten Resistmusters als Maske geeignet ist, wobei die lichtabschirmende Schicht aus einem Material mit einer Selektivität von mehr als 1 bezüglich des Resistmaterials im Trockenätzprozess hergestellt ist.
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公开(公告)号：DE10393095T5
公开(公告)日：2005-08-25
申请号：DE10393095
申请日：2003-12-24
Applicant: HOYA CORP
Inventor： USHIDA MASAO , TAKEUCHI MEGUMI , SUZUKI OSAMU , SAKAMOTO MINORU
IPC: G03F1/32 , G03F1/48 , G03F1/68 , H01L21/027 , G03F1/08
Abstract: A lithography mask blank used as a material for producing a lithography mask includes at least one thin film which is formed on a substrate and has a desired function. The blank has a nitrogen-containing thin film as the above-mentioned thin film and an ammonium ion production preventing layer for preventing production of ammonium ions, which is formed on the nitrogen-containing thin film or at least at a surface portion of the nitrogen-containing thin film and which is exposed on the surface of the lithography mask after the lithography mask is manufactured.
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公开(公告)号：DE10393095B4
公开(公告)日：2011-07-07
申请号：DE10393095
申请日：2003-12-24
Applicant: HOYA CORP
Inventor： USHIDA MASAO , TAKEUCHI MEGUMI , SUZUKI OSAMU , SAKAMOTO MINORU
IPC: G03F1/32 , G03F1/48 , G03F1/68 , H01L21/027
Abstract: Verfahren zur Herstellung eines Lithografiemaskenrohlings mit den Schritten: Bereitstellen eines Substrats; Ausbilden mindestens einer Lage aus einer Dünnschicht, die Molybdän, Silizium und Stickstoff enthält, auf dem Substrat; und Ausbilden einer Schicht zum Verhindern der Erzeugung von Ammoniumionen an mindestens einem Oberflächenabschnitt der Dünnschicht, wobei die Schicht zum Verhindern der Erzeugung von Ammoniumionen durch Ausführen einer Wärmebehandlung der Dünnschicht, die Molybdän, Silizium und Stickstoff enthält, in einer Atmosphäre hergestellt wird, die Sauerstoff enthält.
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公开(公告)号：DE112005001588T5
公开(公告)日：2007-05-24
申请号：DE112005001588
申请日：2005-07-08
Applicant: HOYA CORP
Inventor： KOMINATO ATSUSHI , YAMADA TAKEYUKI , SAKAMOTO MINORU , HASHIMOTO MASAHIRO
IPC: G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80 , H01L21/027
Abstract: By increasing the dry etching rate of a light shielding film, the dry etching time can be shortened so that loss of a resist film is reduced. As a result, a reduction in thickness (to 300 nm or less) of the resist film becomes possible so that pattern resolution and pattern accuracy (CD accuracy) can be improved. Further, by shortening the dry etching time, a photomask blank and a photomask manufacturing method are provided, which can form a pattern of the light shielding film having an excellent sectional shape. In a photomask blank having a light shielding film on an optically transparent substrate, the photomask blank being a mask blank for a dry etching process adapted for a photomask producing method of patterning the light shielding film by the dry etching process using as a mask a pattern of a resist formed on the light shielding film, the light shielding film is made of a material having a selectivity exceeding 1 with respect to the resist in the dry etching process.
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公开(公告)号：JP2005092241A
公开(公告)日：2005-04-07
申请号：JP2004360171
申请日：2004-12-13
Inventor： USHIDA MASAO , SAKAMOTO MINORU
IPC: G03F1/29 , G03F1/32 , G03F1/58 , H01L21/027 , G03F1/08
Abstract: PROBLEM TO BE SOLVED: To provide a technique capable of easily and accurately adjusting the wavelength dependence of reflectance of a light shielding film so as to properly and rapidly perform redesigning under transition of exposure wavelength, resist drawing wavelength, and inspection wavelength in a halftone phase shift mask. SOLUTION: In a method for adjusting the wavelength dependence of reflectance of the light shielding film 3 in the halftone phase shift mask blank having on a transparent substrate 1 a translucent film 2 having a prescribed transmittance and phase shifting extent to exposure light and the light shielding film 3 formed on on the translucent film 2, the top layer part of the light shielding film 3 is formed as a reflectance adjustment part 3a comprising chromium, carbon, oxygen, and nitrogen and the wavelength dependence of reflectance of the entire light shielding film 3 is adjusted according to the nitrogen content of the reflectance adjusting part 3a. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种能够容易且准确地调节遮光膜的反射率的波长依赖性的技术，以便在曝光波长，抗蚀刻波长和检测波长的转变下适当且快速地进行重新设计 半色调相移掩模。 解决方案：在具有透明基板1的半色调相移掩模坯料中调节遮光膜3的反射率的波长依赖性的方法中，具有规定的透射率和相移范围的曝光光的半透明膜2和 形成在半透膜2上的遮光膜3，遮光膜3的顶层部分形成为包含铬，碳，氧和氮的反射调节部分3a，并且整个光的反射率的波长依赖性 屏蔽膜3根据反射率调节部分3a的氮含量进行调节。 版权所有（C）2005，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：JP2008304955A
公开(公告)日：2008-12-18
申请号：JP2008247284
申请日：2008-09-26
Inventor： KOMINATO ATSUSHI , YAMADA TAKAYUKI , SAKAMOTO MINORU , HASHIMOTO MASAHIRO
IPC: G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing a photomask, in which a dry etching time can be shortened and the film reduction of a resist film can be decreased by increasing a dry etching speed of a light shielding film, and thereby, a resist film can be made thinner (≤300 nm), pattern resolution and pattern accuracy (CD accuracy) can be improved, and a light shielding film pattern having a preferable cross-sectional shape can be formed by shortening the dry etching time. SOLUTION: The mask blank for a dry etching process has a light shielding film on a light transmitting substrate and is applicable to a method of manufacturing a photomask for patterning the light shielding film by a dry etching process using a resist pattern as a mask formed on the light shielding film as a mask. The light shielding film is composed of a material having a selectivity to the resist over 1 in the dry etching process. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种光掩模坯料和制造光掩模的方法，其中可以缩短干蚀刻时间并且可以通过增加光的干蚀刻速度来降低抗蚀剂膜的膜还原 可以使抗蚀剂膜更薄（≤300nm），可以提高图案分辨率和图案精度（CD精度），并且可以通过缩短形成具有优选截面形状的遮光膜图案 干蚀刻时间。 解决方案：用于干式蚀刻工艺的掩模坯料在透光基板上具有遮光膜，并且可应用于通过使用抗蚀图案作为干蚀刻工艺来制造用于图案化遮光膜的光掩模的方法 掩模形成在遮光膜上作为掩模。 遮光膜由在干蚀刻工艺中具有超过1的抗蚀剂选择性的材料构成。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2001011625A
公开(公告)日：2001-01-16
申请号：JP18665499
申请日：1999-06-30
Applicant: HOYA CORP
Inventor： SAKAMOTO MINORU , HIRAIDE KATSUYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a substrate holder or the like for film formation free from the need of exchanging a pallet (with the one) for carrying matching to the size of a substrate, moreover reduced in charging time and capable of reducing the production cost. SOLUTION: This is a substrate holder 1 for film formation having an outer shape form being mountable to substrate fitting holes (e.g. of 3.5 inches) in a pallet for carrying in an inline type sputtering device and a supporting hole 3 for handling. The substrate holder 1 for film formation has substrate fitting holes 2 capable of being mounted with a plurality of substrates (e.g. of 1 inch) for film formation.
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公开(公告)号：JP2009020532A
公开(公告)日：2009-01-29
申请号：JP2008247286
申请日：2008-09-26
Inventor： KOMINATO ATSUSHI , YAMADA TAKAYUKI , SAKAMOTO MINORU , HASHIMOTO MASAHIRO
IPC: G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To shorten a dry etching time and to decrease film reduction in a resist film by increasing the dry etching rate of a light shielding film. SOLUTION: In a photomask blank having a light shielding film on an optically transparent substrate, the photomask blank is a mask blank for a dry etching process adapted for a photomask production method of patterning the light shielding film by the dry etching process using as a mask a pattern of a resist formed on the light shielding film, wherein the light shielding film is made of a material having a selectivity exceeding 1 with respect to the resist in the dry etching process. As a result, a reduction in thickness (to 300 nm or less) of the resist film becomes possible so that pattern resolution and pattern accuracy (CD accuracy) can be improved. Further, by shortening the dry etching time, a pattern of the light shielding film having an excellent sectional shape can be formed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：通过增加遮光膜的干蚀刻速率，缩短干蚀刻时间并降低抗蚀剂膜中的膜还原。 解决方案：在光学透明基板上具有遮光膜的光掩模坯料中，光掩模坯料是用于通过干法蚀刻工艺对遮光膜进行图案化的光掩模生产方法的干蚀刻工艺的掩模坯料，其使用 作为掩模，形成在遮光膜上的抗蚀剂图案，其中，所述遮光膜由在干法蚀刻工艺中相对于抗蚀剂选择性超过1的材料制成。 结果，可以减小抗蚀剂膜的厚度（至300nm或更小），从而可以提高图案分辨率和图案精度（CD精度）。 此外，通过缩短干蚀刻时间，可以形成具有优异截面形状的遮光膜的图案。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008304956A
公开(公告)日：2008-12-18
申请号：JP2008247285
申请日：2008-09-26
Inventor： KOMINATO ATSUSHI , YAMADA TAKAYUKI , SAKAMOTO MINORU , HASHIMOTO MASAHIRO
IPC: G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing a photomask, in which a dry etching time can be shortened and the film reduction of a resist film can be decreased by increasing a dry etching speed of a light shielding film, and thereby, a resist film can be made thinner (≤300 nm), pattern resolution and pattern accuracy (CD accuracy) can be improved, and a light shielding film pattern having a preferable cross-sectional shape can be formed by shortening the dry etching time. SOLUTION: The mask blank for a dry etching process has a light shielding film on a translucent substrate and is applicable to a method of manufacturing a photomask for patterning the light shielding film by a dry etching process using a resist pattern as a mask formed on the light shielding film as a mask. The light shielding film is composed of a material having a selectivity ratio to the resist over 1 in the dry etching process. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种光掩模坯料和制造光掩模的方法，其中可以缩短干蚀刻时间并且可以通过增加光的干蚀刻速度来降低抗蚀剂膜的膜还原 可以使抗蚀剂膜更薄（≤300nm），可以提高图案分辨率和图案精度（CD精度），并且可以通过缩短形成具有优选截面形状的遮光膜图案 干蚀刻时间。 解决方案：用于干蚀刻工艺的掩模坯料在透光性基板上具有遮光膜，并且可应用于通过使用抗蚀剂图案作为掩模的干蚀刻工艺来制造用于图案化遮光膜的光掩模的方法 形成在遮光膜上作为掩模。 在干式蚀刻工艺中，遮光膜由抗蚀剂选择率超过1的材料构成。 版权所有（C）2009，JPO＆INPIT
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10.发明专利Halftone phase shifting mask blank and halftone phase shifting mask 审中-公开HALFTONE相位移位面罩和HALFTONE相位移位面罩
公开(公告)号：JP2003322954A
公开(公告)日：2003-11-14
申请号：JP2003036825
申请日：2003-02-14
Inventor： USHIDA MASAO , SAKAMOTO MINORU , NISHIDA NAOKI
IPC: G03F1/29 , G03F1/32 , G03F1/68 , H01L21/027 , G03F1/08
Abstract: PROBLEM TO BE SOLVED: To reliably detect a defect or foreign matter in a halftone phase shifting mask.
SOLUTION: A halftone phase shifting mask obtained by laminating a translucent film pattern and a light shielding film pattern in this order on a transparent substrate is composed in such a way that the transparent substrate, the translucent film pattern and the light shielding film pattern are made different from each other in reflectance to inspection light to such a degree that the translucent film pattern and the light shielding film pattern can be detected based on light reflected when the mask is irradiated with the inspection light.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：可靠地检测半色调相移掩模中的缺陷或异物。 解决方案：通过在透明基板上依次层叠半透明膜图案和遮光膜图案而获得的半色调相移掩模以这样的方式构成，使得透明基板，半透明膜图案和遮光膜 在检查光的反射率上使图案彼此不同，使得可以基于当用掩模被检查光照射时反射的光来检测半透明膜图案和遮光膜图案。 版权所有（C）2004，JPO
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