公开(公告)号：KR20180054682A

公开(公告)日：2018-05-24

申请号：KR20187010265

申请日：2016-09-08

Applicant: HOYA CORP

Inventor： MATSUMOTO ATSUSHI ,  SHISHIDO HIROAKI ,  UCHIDA TAKASHI

IPC: G03F1/32 ,  G03F1/58 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58

Abstract: 본발명에의한마스크블랭크(10)는, 차광막(4)이, 단층구조또는복수층의적층구조를갖고, 상기차광막(4)의적어도하나의층은, 전이금속및 규소를함유하고또한질소및 산소를함유하지않는재료, 또는전이금속, 규소및 질소를함유하며, 또한이하의식 (1)의조건을만족하는재료중 어느것에의해형성되고, 위상시프트막(2)이, 표층과표층이외의층을포함하며, 상기표층이외의층은, 전이금속, 규소, 질소및 산소를함유하고, 산소의함유량이 3원자% 이상이며, 또한이하의식 (A)의조건을만족하는재료로형성되어있다.

公开(公告)号：KR20200125586A

公开(公告)日：2020-11-04

申请号：KR20207021047

申请日：2018-10-31

Applicant: HOYA CORP ,  HOYA ELECTRONICS SINGAPORE PTE LTD

Inventor： SHISHIDO HIROAKI ,  HASHIMOTO MASAHIRO ,  UCHIDA TAKASHI ,  UCHIDA MARIKO

IPC: G03F1/26 ,  G03F1/38 ,  H01L21/027

Abstract: EB 결함수정을행한경우에투광성기판의표면거칠함의발생을억제할수 있고, 위상시프트막의패턴에자발성에칭이발생하는것을억제할수 있는마스크블랭크를제공한다. 투광성기판에접하는위상시프트막은최하층을포함하는 2층이상의적층구조를포함하고, 최하층이외의층은반금속원소및 비금속원소로부터선택되는 1 이상의원소와규소를포함하는재료로형성되고, 최하층은규소와질소를포함하는재료, 또는해당재료와반금속원소및 비금속원소로부터선택되는 1 이상의원소를포함하는재료로형성되고, 최하층에있어서, Si3N4 결합의존재수를, Si3N4 결합, SiaNb 결합(단, b/[a+b]

公开(公告)号：SG10202112818PA

公开(公告)日：2021-12-30

申请号：SG10202112818P

申请日：2018-04-02

Applicant: HOYA CORP

Inventor： OHKUBO RYO ,  SHISHIDO HIROAKI ,  UCHIDA TAKASHI

Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

公开(公告)号：SG11201909351RA

公开(公告)日：2019-11-28

申请号：SG11201909351R

申请日：2018-04-02

Applicant: HOYA CORP

Inventor： OHKUBO RYO ,  SHISHIDO HIROAKI ,  UCHIDA TAKASHI

IPC: G03F1/80 ,  G03F1/00 ,  H01L21/3065

Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom% or more, the maximum peak in a Nis narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

公开(公告)号：SG11202005137VA

公开(公告)日：2020-07-29

申请号：SG11202005137V

申请日：2018-10-31

Applicant: HOYA CORP ,  HOYA ELECTRONICS SINGAPORE PTE LTD

Inventor： SHISHIDO HIROAKI ,  HASHIMOTO MASAHIRO ,  UCHIDA TAKASHI ,  UCHIDA MARIKO

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/74 ,  G03F7/20

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]

公开(公告)号：SG10202112473XA

公开(公告)日：2021-12-30

申请号：SG10202112473X

申请日：2018-10-31

Applicant: HOYA CORP ,  HOYA ELECTRONICS SINGAPORE PTE LTD

Inventor： SHISHIDO HIROAKI ,  HASHIMOTO MASAHIRO ,  UCHIDA TAKASHI ,  UCHIDA MARIKO

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]

公开(公告)号：JP2013064797A

公开(公告)日：2013-04-11

申请号：JP2011202351

申请日：2011-09-15

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  UCHIDA TAKASHI

IPC: G03F1/58 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To improve resistance of a semi-translucent film, composed of material containing tantalum, to an etchant for chromium, for reducing damage to the semi-translucent film.SOLUTION: In a mask blank, a semi-translucent film and a light shielding film are formed in order on a translucent substrate. The semi-translucent film is composed of material containing tantalum. On a surface layer of the semi-translucent film on the opposite side of the translucent substrate, a high oxidized layer with an oxygen content of 60 at% or higher is formed, and the oxygen content in the semi-translucent film excluding the high oxidized layer is less than 60 at%.

Abstract translation: 要解决的问题：为了提高由含钽的材料组成的半透明膜对于蚀刻剂的耐蚀性，以减少半透明膜的损伤。 解决方案：在掩模坯料中，在半透明基板上依次形成半透明膜和遮光膜。 半透明膜由含钽的材料构成。 在透光性基板的相反侧的半透光性膜的表面层上形成氧含量为60原子％以上的高氧化层，半透明膜中除氧化物以外的氧含量高 层小于60原子％。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011100108A

公开(公告)日：2011-05-19

申请号：JP2010200543

申请日：2010-09-08

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： OKUBO YASUSHI ,  UCHIDA TAKASHI

IPC: G03F1/50 ,  G03F1/58 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a binary mask blank, a transfer mask and a transfer mask set, suitable for application to double-exposure technology. SOLUTION: A mask blank is provided to be used for manufacturing a binary transfer mask to which ArF exposure light is applied. The mask blank includes, on a light-transmitting substrate 1, successively from the substrate side: a light-shielding film 10 for forming a transfer pattern; and an auxiliary light-shielding film 20 for forming a light-shielding zone in a layered structure with the light-shielding film, wherein the light-shielding film 10 has an optical density of 2.5 or more and 3.1 or less and the auxiliary light-shielding film 20 has an optical density of 0.5 or more. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于双曝光技术的二进制掩模坯料，转印掩模和转印掩模组。

解决方案：提供掩模空白，用于制造施加ArF曝光光的二进制转印掩模。 掩模坯料在透光性基板1上依次从基板侧构成：形成转印图案的遮光膜10; 以及辅助遮光膜20，其形成具有遮光膜的层叠结构的遮光区域，其中，所述遮光膜10的光密度为2.5以上且3.1以下， 屏蔽膜20的光密度为0.5以上。 版权所有（C）2011，JPO＆INPIT