公开(公告)号：KR20200128021A

公开(公告)日：2020-11-11

申请号：KR20207025381

申请日：2019-02-20

Applicant: HOYA CORP

Inventor： SHISHIDO HIROAKI ,  TANIGUCHI KAZUTAKE

IPC: G03F1/34 ,  C23C14/06 ,  H01L21/3065

Abstract: ArF 노광광에대하여 80% 이상의높은투과율을가짐과함께, 투광부에있어서 5% 이상의투과율차를얻을수 있는에칭스토퍼막을구비하는위상시프트마스크용마스크블랭크를제공한다. 투광성기판상에, 에칭스토퍼막과위상시프트막이이 순으로적층된구조를구비하는마스크블랭크이며, 위상시프트막은, 규소및 산소를함유하는재료로이루어지고, 위상시프트막은, 파장 193nm의광에대한굴절률 n1이 1.5 이상이고, 또한파장 193nm의광에대한소쇠계수 k1이 0.1 이하이고, 에칭스토퍼막은, 파장 193nm의광에대한굴절률 n2가 2.5 이상 3.1 이하, 또한파장 193nm의광에대한소쇠계수 k2가 0.4 이하이고, 또한상기굴절률 n2 및소쇠계수 k2가 (조건 1)부터 (조건 5) 중 1 이상의조건을충족하는것을특징으로하는마스크블랭크.

公开(公告)号：KR20180054682A

公开(公告)日：2018-05-24

申请号：KR20187010265

申请日：2016-09-08

Applicant: HOYA CORP

Inventor： MATSUMOTO ATSUSHI ,  SHISHIDO HIROAKI ,  UCHIDA TAKASHI

IPC: G03F1/32 ,  G03F1/58 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58

Abstract: 본발명에의한마스크블랭크(10)는, 차광막(4)이, 단층구조또는복수층의적층구조를갖고, 상기차광막(4)의적어도하나의층은, 전이금속및 규소를함유하고또한질소및 산소를함유하지않는재료, 또는전이금속, 규소및 질소를함유하며, 또한이하의식 (1)의조건을만족하는재료중 어느것에의해형성되고, 위상시프트막(2)이, 표층과표층이외의층을포함하며, 상기표층이외의층은, 전이금속, 규소, 질소및 산소를함유하고, 산소의함유량이 3원자% 이상이며, 또한이하의식 (A)의조건을만족하는재료로형성되어있다.

公开(公告)号：KR20180041266A

公开(公告)日：2018-04-23

申请号：KR20187010644

申请日：2011-04-08

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  SHISHIDO HIROAKI ,  SAKAI KAZUYA

IPC: G03F1/26 ,  C23C14/06 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027

CPC classification number: G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

Abstract: 파장 200㎚이하의노광광에대한천이금속, 규소및 질소를주성분으로하는재료로이루어지는광 반투광막(위상시프트막)의내광성을향상시키고, 마스크수명을개선할수 있는위상시프트마스크블랭크및 그제조방법, 및위상시프트마스크를제공한다. ArF 엑시머레이저노광광이적용되는위상시프트마스크를제작하기위해서사용되는위상시프트마스크블랭크이며, 투광성기판상에광 반투과막을구비하고, 상기광 반투과막은, 천이금속, 규소및 질소를주성분으로하는불완전질화물막으로이루어지고, 상기광 반투과막의천이금속과규소와의사이에있어서의천이금속의함유비율이 9% 미만인것을특징으로하는위상시프트마스크블랭크이다.

公开(公告)号：KR20200125586A

公开(公告)日：2020-11-04

申请号：KR20207021047

申请日：2018-10-31

Applicant: HOYA CORP ,  HOYA ELECTRONICS SINGAPORE PTE LTD

Inventor： SHISHIDO HIROAKI ,  HASHIMOTO MASAHIRO ,  UCHIDA TAKASHI ,  UCHIDA MARIKO

IPC: G03F1/26 ,  G03F1/38 ,  H01L21/027

Abstract: EB 결함수정을행한경우에투광성기판의표면거칠함의발생을억제할수 있고, 위상시프트막의패턴에자발성에칭이발생하는것을억제할수 있는마스크블랭크를제공한다. 투광성기판에접하는위상시프트막은최하층을포함하는 2층이상의적층구조를포함하고, 최하층이외의층은반금속원소및 비금속원소로부터선택되는 1 이상의원소와규소를포함하는재료로형성되고, 최하층은규소와질소를포함하는재료, 또는해당재료와반금속원소및 비금속원소로부터선택되는 1 이상의원소를포함하는재료로형성되고, 최하층에있어서, Si3N4 결합의존재수를, Si3N4 결합, SiaNb 결합(단, b/[a+b]

公开(公告)号：KR20180030471A

公开(公告)日：2018-03-23

申请号：KR20177035245

申请日：2016-08-02

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  SHISHIDO HIROAKI ,  KAJIWARA TAKENORI

IPC: G03F1/32 ,  G03F1/00 ,  G03F7/20

CPC classification number: C23C14/06 ,  G03F1/32

Abstract: ArF 노광광에대하여소정의투과율로투과하는기능과그 투과하는 ArF 노광광에대하여소정의위상차를발생시키는기능을겸비하고, ArF 내광성이높은위상시프트막을구비하는마스크블랭크를제공한다. 위상시프트막은, ArF 노광광을 2% 이상의투과율로투과시키는기능과, 그투과하는 ArF 노광광에대하여 150도이상 180도이하의위상차를발생시키는기능을가지고, 기판측으로부터하층과상층이적층되고, 하층은, 규소, 또는규소에산소이외의비금속원소및 반금속원소에서선택되는 1 이상의원소를함유해서형성되고, 표층이외의상층은, 규소및 질소, 또는이들에산소를제외한비금속원소및 반금속원소에서선택되는 1 이상의원소를함유하는재료로형성되고, 하층은, 굴절률(n)이 1.8 미만이고또한소쇠계수(k)가 2.0 이상이고, 상층은, 굴절률(n)이 2.3 이상이고또한소쇠계수(k)가 1.0 이하이며, 상층은하층보다도두껍다.

Abstract translation: 本发明提供一种掩模基板，其具备以规定的透射率透过ArF曝光光，并对所透射的ArF曝光光产生规定的相位差，同时具有高的ArF耐光性的相移膜。 相移膜以2％或更高的透射率透射ArF曝光光线，并为所透射的ArF曝光光线产生150度和180度之间的相位差。 下层和上层从基材开始层压。 下层由硅或硅和含有一种或多种选自非金属元素（不包括氧和准金属元素）的元素的材料形成。 除了表面层以外的上层由硅和氮或硅，氮和包含选自非氧化物和类金属元素的非金属元素中的一种或多种元素的材料形成。 下层具有小于1.8的折射率n和不小于2.0的消光系数k。 上层具有不小于2.3的折射率n和不大于1.0的消光系数k。 上层比下层厚。

公开(公告)号：SG11202002544SA

公开(公告)日：2020-04-29

申请号：SG11202002544S

申请日：2018-09-06

Applicant: HOYA CORP

Inventor： MAEDA HITOSHI ,  SHISHIDO HIROAKI

IPC: G03F1/32 ,  G01N23/2258 ,  G03F1/58

Abstract: In a mask blank in which a thin film formed of a material consisting of silicon and nitrogen is formed on a transparent substrate, when the thin film is analyzed by secondary ion mass spectrometry to obtain in-depth distribution of a secondary ion intensity of silicon in counts per second, a slope of the secondary ion intensity of silicon with respect to depth in a direction toward the transparent substrate is less than one hundred fifty counts per second per nanometer in an internal region of the thin film other than a substrate neighborhood region and a surface region.

公开(公告)号：SG11201909351RA

公开(公告)日：2019-11-28

申请号：SG11201909351R

申请日：2018-04-02

Applicant: HOYA CORP

Inventor： OHKUBO RYO ,  SHISHIDO HIROAKI ,  UCHIDA TAKASHI

IPC: G03F1/80 ,  G03F1/00 ,  H01L21/3065

Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom% or more, the maximum peak in a Nis narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

公开(公告)号：SG11201908105VA

公开(公告)日：2019-10-30

申请号：SG11201908105V

申请日：2018-02-28

Applicant: HOYA CORP

Inventor： TANIGUCHI KAZUTAKE ,  SHISHIDO HIROAKI

IPC: G03F1/54 ,  G03F1/56 ,  G03F7/20

Abstract: DOCUMENT] Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of .0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n 29.316 x k - 92.292 x k + 72.671 2 Formula (2) 39

公开(公告)号：SG11201907771TA

公开(公告)日：2019-09-27

申请号：SG11201907771T

申请日：2018-01-24

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  OHKUBO RYO ,  SHISHIDO HIROAKI

IPC: G03F1/48 ,  G03F1/20 ,  G03F1/24

Abstract: A light shielding film 2 made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film 3 made up of a material containing chrome, oxygen, and carbon are laminated on a translucent substrate 1. The hard mask film 3 is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow scan spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film 3 have a 50 atom% or more chrome content, and the maximum peak for Cr2p in a narrow scan spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：SG10202112473XA

公开(公告)日：2021-12-30

申请号：SG10202112473X

申请日：2018-10-31

Applicant: HOYA CORP ,  HOYA ELECTRONICS SINGAPORE PTE LTD

Inventor： SHISHIDO HIROAKI ,  HASHIMOTO MASAHIRO ,  UCHIDA TAKASHI ,  UCHIDA MARIKO

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]