公开(公告)号：AU5631900A

公开(公告)日：2001-01-09

申请号：AU5631900

申请日：2000-06-22

Applicant: HRL LAB LLC

Inventor： DOCTER DANIEL P ,  MICOVIC MIROSLAV ,  MATLOUBIAN MEHRAN

IPC: H01L21/331 ,  H01L29/737

公开(公告)号：AU5757300A

公开(公告)日：2001-02-05

申请号：AU5757300

申请日：2000-06-21

Applicant: HRL LAB LLC

Inventor： DOCTER DANIEL P ,  KIZILOGLU KURSAD

IPC: H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L21/338

公开(公告)号：AU7049600A

公开(公告)日：2000-11-21

申请号：AU7049600

申请日：2000-05-04

Applicant: HRL LAB LLC

Inventor： MICOVIC MIROSLAV ,  DOCTER DANIEL P

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/331 ,  H01L21/338 ,  H01L29/45 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812

Abstract: A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.

公开(公告)号：WO0068982A9

公开(公告)日：2002-06-13

申请号：PCT/US0012294

申请日：2000-05-04

Applicant: HRL LAB LLC

Inventor： MICOVIC MIROSLAV ,  DOCTER DANIEL P

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/331 ,  H01L21/338 ,  H01L29/45 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812

CPC classification number: B82Y15/00 ,  H01L21/28575 ,  H01L29/452

Abstract: A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.

Abstract translation: 一种降低金属与InP半导体化合物之间的金属与半导体界面的比接触电阻率的方法。 该方法包括增加半导体化合物中的V族元素（P）的量的步骤，使半导体化合物的非化学计量比V族元素的过量浓度高于化学计量值的至少0.1％ 。