公开(公告)号：DE3173201D1

公开(公告)日：1986-01-23

申请号：DE3173201

申请日：1981-09-09

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA

IPC: G09G3/28 ,  H01J11/12 ,  H01J17/49

公开(公告)号：DE3265005D1

公开(公告)日：1985-09-05

申请号：DE3265005

申请日：1982-03-18

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA

IPC: H01J11/12 ,  H01J17/49

Abstract: A plasma display device having a multiplayer envelope containing electrodes and enclosing a discharge volume, the innermost layer being a doped refractory oxide layer of magnesium, barium, calcium and/or strontium oxide doped with one or more first series transition metals of Groups VIB, VIIB and VIII (nickel, cobalt, iron, manganese, chromium), the weight percentage of dopant relative to oxide in the layer being preferably three to five and certainly not more than twelve.

公开(公告)号：DE3380469D1

公开(公告)日：1989-09-28

申请号：DE3380469

申请日：1983-09-20

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  TSANG YUK LUN

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/485 ,  H01L29/43 ,  H01L23/48

公开(公告)号：DE3064192D1

公开(公告)日：1983-08-25

申请号：DE3064192

申请日：1980-03-20

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA

IPC: H01J17/49

Abstract: In a direct current gas discharge panel, the cathode conductors (4) are protected from ion bombardment by a refractory oxide (MgO) double isolating layer (10, 12) the outer portion (10), from 2,000 ANGSTROM to 3,000 ANGSTROM thick, being doped with from 10%to25% by volume of a noble metal, the inner portion (12), from 100 ANGSTROM to 10,000 ANGSTROM thick, being not so doped. The anode conductors (6) may be isolated by a single layer (13) which may be non-stoichiometric and effectively form a resistive part of the circuitry of the panel.

公开(公告)号：DE69127037D1

公开(公告)日：1997-09-04

申请号：DE69127037

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872

公开(公告)号：BR9400334A

公开(公告)日：1994-09-27

申请号：BR9400334

申请日：1994-01-26

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  BRADY MICHAEL JOHN ,  KRUSIN-ELBAUM LIAN NMN

IPC: C22C1/00 ,  C22C9/00 ,  C23C14/06 ,  C23C14/16 ,  C23C14/58 ,  C23C30/00

Abstract: A cpd. which is highly resistant to oxidn. and has low resistivity at room temp. comprises stoichiometric Cu3Ge contg. 1-15 at.% Ga and/or Au. The most pref. content of Ga and/or Au in the Cu3Ge is 1-3 at.%. The resistivity of the cpd. at room temp. is 2.6-2.9 micron omega cm.

公开(公告)号：DE69132842T2

公开(公告)日：2002-08-01

申请号：DE69132842

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872 ,  C23F1/18 ,  C23F1/44

公开(公告)号：DE69132842D1

公开(公告)日：2002-01-10

申请号：DE69132842

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872 ,  C23F1/18 ,  C23F1/44

公开(公告)号：DE69127037T2

公开(公告)日：1998-02-12

申请号：DE69127037

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872

公开(公告)号：DE3173485D1

公开(公告)日：1986-02-27

申请号：DE3173485

申请日：1981-03-31

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  SKOLNIK MARVIN BENJAMIN

IPC: H01J17/49 ,  G06F3/147 ,  G11C11/28

Abstract: A D.C. gas discharge display panel for operation in a storage mode with internal memory, comprises a gas filled envelope bounded by a pair of glass plates (2 and 3), which carry on their respective internal surfaces orthogonal arrays of cathode conductors (4) and anode conductors (6) separated by a discharge gap (30). The array of cathode conductors is covered by a layer (10) of resistive material, which in turn is covered by a cermet layer (12). The cermet layer protects the cathode conductors from ion bombardment induced sputtering during discharge. The layers provide a resistance to each discharge cell, and provide isolation between individual cathodes by reducing discharge spreading along the cathode conductors and preventing surface charge build-up during panel operation. By using a combination of metal and insulator in the resistance layer, the D.C. discharge can be sustained at lower operating voltage, permitting a reduction in the power requirements of the panel.