公开(公告)号：DE69016326T2

公开(公告)日：1995-07-13

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.

公开(公告)号：DE69030074T2

公开(公告)日：1997-09-18

申请号：DE69030074

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  GANIN ETI ,  SAI-HALASZ GEORGE ANTHONY ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN ,  WORDEMAN MATTHEW ROBERT

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L39/02 ,  H01L39/22 ,  H01L39/24

公开(公告)号：DE69132842T2

公开(公告)日：2002-08-01

申请号：DE69132842

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872 ,  C23F1/18 ,  C23F1/44

公开(公告)号：DE69132842D1

公开(公告)日：2002-01-10

申请号：DE69132842

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872 ,  C23F1/18 ,  C23F1/44

公开(公告)号：DE69127037T2

公开(公告)日：1998-02-12

申请号：DE69127037

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872

公开(公告)号：DE69127037D1

公开(公告)日：1997-09-04

申请号：DE69127037

申请日：1991-03-02

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED OSAMA ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/872

公开(公告)号：DE69030074D1

公开(公告)日：1997-04-10

申请号：DE69030074

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  GANIN ETI ,  SAI-HALASZ GEORGE ANTHONY ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN ,  WORDEMAN MATTHEW ROBERT

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L39/02 ,  H01L39/22 ,  H01L39/24

公开(公告)号：DE69016326D1

公开(公告)日：1995-03-09

申请号：DE69016326

申请日：1990-05-12

Applicant: IBM

Inventor： NGUYEN THAO NGOC ,  STEIN KENNETH JAY ,  SUN YUAN-CHEN ,  WEINBERG ZEEV AVRAHAM

IPC: C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40

Abstract: A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4 min ) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.