Radio frequency circuit and memory in thin flexible package

    公开(公告)号:SG46938A1

    公开(公告)日:1998-03-20

    申请号:SG1995000278

    申请日:1995-04-18

    Applicant: IBM

    Abstract: The present invention is a novel thin and flexible radio frequency (RF) tag that comprises a semiconductor circuit that has logic, memory, and radio frequency circuits, connected to an antenna with all interconnections placed on a single plane of wiring without crossovers. The elements of the package (substrate, antenna, and laminated covers) are flexible. The elements of the package are all thin. The tag is thin and flexible, enabling a unique range of applications including: RF ID tagging of credit cards, passports, admission tickets, and postage stamps.

    RADIO FREQUENCY CIRCUIT AND MEMORY IN A THIN FLEXIBLE UNIT

    公开(公告)号:PL318977A1

    公开(公告)日:1997-07-21

    申请号:PL31897795

    申请日:1995-08-08

    Applicant: IBM

    Abstract: The present invention is a novel thin and flexible radio frequency (RF) tag that comprises a semiconductor circuit that has logic, memory, and radio frequency circuits, connected to an antenna with all interconnections placed on a single plane of wiring without crossovers. The elements of the package (substrate, antenna, and laminated covers) are flexible. The elements of the package are all thin. The tag is thin and flexible, enabling a unique range of applications including: RF ID tagging of credit cards, passports, admission tickets, and postage stamps.

    X-RAY LITHOGRAPHIC MASK
    9.
    发明专利

    公开(公告)号:DE3365521D1

    公开(公告)日:1986-10-02

    申请号:DE3365521

    申请日:1983-02-23

    Applicant: IBM

    Abstract: An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375 DEG C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.

Patent Agency Ranking