公开(公告)号：JPH10172905A

公开(公告)日：1998-06-26

申请号：JP28022397

申请日：1997-10-14

Applicant: IBM

Inventor： ACOSTA RAUL EDMUNDO ,  VISWANATHAN RAMAN GOBICHETTIPA

IPC: G03F1/00 ,  H01L21/027 ,  G03F1/14 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To reduce the absorber stress effect and the in-plane strain, by regulating alternate row regions on a surface of a film transparent to an emitted light, and providing supporting members opaque to the emitted light between these row regions like an interleaving style. SOLUTION: All rows or row regions i.e., mask film pattern sections, and mask film sections having supporting members are arranged in an interleaving style. Namely, a plurality of mask film pattern sections are arranged on a film 32 at intervals to each other, and these intervals correspond to mask film supporting sections individually. Pattern parts 33 of an absorber are formed in the films of the mask film pattern sections i.e., in film regions, and supporting members 35 are fitted to the films of the mask film supporting sections i.e., film sections. The supporting members 35 are made out of material nontransparent to an X-ray emitted light, and silicon is used as a substrate, and a silicon carbide, etc., are used as films.

公开(公告)号：DE3477868D1

公开(公告)日：1989-05-24

申请号：DE3477868

申请日：1984-06-20

Applicant: IBM

Inventor： ACOSTA RAUL EDMUNDO ,  HORKANS WILMA JEAN ,  MUKHERJEE RUBY ,  OLSEN JUDITH DIANE

IPC: H05K1/09 ,  C23C30/00 ,  H01L21/28 ,  H01L29/43 ,  H05K3/24 ,  H05K3/28 ,  H05K3/38 ,  H05K3/46

公开(公告)号：DE3466076D1

公开(公告)日：1987-10-15

申请号：DE3466076

申请日：1984-11-06

Applicant: IBM

Inventor： ACOSTA RAUL EDMUNDO ,  YARMCHUK EDWARD JOHN

IPC: H05K3/18 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40 ,  G01B7/06 ,  H05K1/02 ,  H05K3/00 ,  H05K3/24 ,  G01R17/10

公开(公告)号：SG53103A1

公开(公告)日：1998-09-28

申请号：SG1997003736

申请日：1997-10-14

Applicant: IBM

Inventor： ACOSTA RAUL EDMUNDO ,  VISWANATHAN RAMAN GOBICHETTIPA

IPC: G03F1/00 ,  H01L21/027

Abstract: A membrane mask (30) structure for lithography using a radiation source and steps for fabricating and using the inventive membrane mask structure. The membrane mask (30) structure comprises the following: a support structure formed of a material which is opaque to the lithographic radiation source and comprising support members (35) separated by window areas; a membrane layer overlaying said support members (35) and window areas, said membrane layer comprised of material which is transparent to said radiation source; and a pattern (33) of feature material formed on or embedded in the membrane layer, said feature material being opaque to the radiation source and said feature pattern aligning with the window areas of said support structure. The mask structure may additionally include a plurality of reference markers (71) formed in or on said membrane layer or on said support members of said support structure. In addition, the mask structure may include a protective pellicle (108) of radiation-transparent material, which pellicle (108) is mounted on the surface of said support members (35) not associated with said membrane layer in such a way as to prevent any debris from contacting the membrane areas on which the feature pattern is formed.