公开(公告)号：JPH05224421A

公开(公告)日：1993-09-03

申请号：JP20784792

申请日：1992-08-04

Applicant: IBM

Inventor： EDOWAADO DAAKO BAABIKU ,  AIRIIN AN GARIGAN ,  JIEFURII DONARUDO JIEROOMU ,  RICHIYAADO PIITAA MAKUGAUEI ,  SHIYARON RUIIZU NUUNISHIYU ,  JIYUURII ROSUTEISURAFU PARASHI ,  RATSUSERU JIYOZEFU SERIINO ,  DEIBITSUDO FURANKU UITSUTOMAN

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To obtain a photoresist composition capable of being made an image by the exposure to an actinic radiation and being developed in a water based basic composition. CONSTITUTION: The photoresist composition contains a polymer selected from the group composed of novolak polymer, poly(p-biphenyl phenol) and the mixture, a 2- or polyfunctional organic metallic material containing a functional group capable of reacting with amino group and selected from a group composed of organosilicon, organo-tin and organo-germanium and the mixture, an amino group-containing polymer having the effective quantity of a usable reactive amino group to cross-linking and the novolak polymer or poly(p-vinyl phenol) and the effective quantity of a cationic photocatalyst to initiate the cross-linking of the organic metallic material and the amino group-containing polymer. The composition can contain a sensitizing agent material for making the composition photosensitive to near UV radiation.