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    NEGATIVE CONTRAST PHOTORESIST DEVELOPABLE BY BASE
    3.
    发明专利
    NEGATIVE CONTRAST PHOTORESIST DEVELOPABLE BY BASE 失效

    公开(公告)号：JPH03152543A

    公开(公告)日：1991-06-28

    申请号：JP25042190

    申请日：1990-09-21

    Applicant: IBM

    Inventor： UIRAADO AARU KONREE JIYUNIA ,  JIEFURII DONARUDO JIEROOMU ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROORUTO ,  GEERII TOMASU SUPINITSURO ,  ROBAATO RABIN UTSUDO

    IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

    Abstract: PURPOSE: To ensure satisfactory contrast and sensitivity by using an arom. hydroxy substd. polymer, a radiation-degradable acid generating agent and a crosslinking agent having two epoxy groups per one molecule. CONSTITUTION: This photoresist contains polyhydroxystyrene, especially poly-p- hydroxystyrene or novolak such as m-cresol novolak or bisphenol A novolak as an arom. hydroxy substd. polymer, a metallic or nonmetallic onium salt or a nonmetallic precursor of sulfonic acid generating the strong acid when exposed with radiation as a radiation-degradable acid generating agent and an epoxide-contg. compd. having two epoxy groups and crosslinking the hydroxy substd. polymer in the presence of the acid generated under radiation. Satisfactory contrast is ensured without reducing sensitivity.

    POLYMER-SHAPED OPTICAL WAVEGUIDE AND MANUFACTURE THEREOF
    4.
    发明专利
    POLYMER-SHAPED OPTICAL WAVEGUIDE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH0815537A

    公开(公告)日：1996-01-19

    申请号：JP4082391

    申请日：1991-02-14

    Applicant: IBM

    Inventor： BANSEN FUAN ,  DONISU JIYOOJI FURAJIERO ,  JIEFURII DONARUDO JIEROOMU ,  MODESUTO MAIKURU OPURISUKO ,  ARUBAATO SUPIISU ,  JIININ MADERIN TOREHOERA

    IPC: B32B7/02 ,  B32B27/38 ,  C08G59/20 ,  G02B1/04 ,  G02B6/12 ,  G02B6/13 ,  G02B6/138

    Abstract: PURPOSE: To make it possible to obtain low propagation loss and high environmental safety by constituting the optical waveguide of a layer of a polymer material contg. epoxy groups having different degrees of polymn. and eventually a preselected range of different refractive indices. CONSTITUTION: This polymer-like optical waveguide consists of the layer of the polymer-like material contg. the epoxy groups having the different degrees of polymn. and eventually the preselected range of the different refractive indices. In such a case, the optical waveguide is constituted by coating a suitable base body 10 with a layer 20 of a coating material, for example, quartz, glass, polymer, etc. This coating layer has the refractive index lower than the refractive index of the core or polymer optical waveguide material and is optical. The layer described above is then coated with a layer 30 of a photosensitive polymer, more typically an Epirezsu 8 having a photoacid. The coatings applied on the base body are then subjected to baking for several minutes. The negative photomask formed in such a manner forms the desired patterns of exposed regions 40 and unexposed regions 50.

    PHOTOSENSITIVE COMPOSITE AND UTILIZATION OF THE SAME
    6.
    发明专利
    PHOTOSENSITIVE COMPOSITE AND UTILIZATION OF THE SAME 失效

    公开(公告)号：JPH0358050A

    公开(公告)日：1991-03-13

    申请号：JP16007690

    申请日：1990-06-20

    Applicant: IBM

    Inventor： JIEFURII DONARUDO JIEROOMU ,  YUUJIIN ROOMAN SUKARUBINKO ,  DEIBITSUDO UEI WAN

    IPC: C08G73/06 ,  C08G73/12 ,  G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    Abstract: PURPOSE: To enhance the resolving power and various mechanical characteristics of a coating film and to form a permanent mask by incorporating a specified curable compd. and a specified photoinitiator into a compsn. CONSTITUTION: This compsn. contains curable cyanate ester or its prepolymer (A) and a cationic photoinitiator (B). A compd. represented by formula I or its prepolymer is preferably used as the component A. Onium salt of a group VIa or VII element is preferably used as the component B when this compsn. is a positive type compsn. and an iron arene compd. represented by formula II is preferably used as the component B when this compsn. is a negative type compsn. In the formula I, A is a single bond, S, etc., R is H, 1-8C alkyl, etc., and (n) is 0-4. In the formula II, L is aryl and X is a non-nucleophilic anion.

    DRY TYPE DEVELOPABLE PHOTO-RESIST AND UTILIZATION THEREOF
    9.
    发明专利
    DRY TYPE DEVELOPABLE PHOTO-RESIST AND UTILIZATION THEREOF 失效

    公开(公告)号：JPH05100425A

    公开(公告)日：1993-04-23

    申请号：JP7064192

    申请日：1992-03-27

    Applicant: IBM

    Inventor： EDOWAADO DAAKO BAABIKU ,  JIEFURII DONARUDO JIEROOMU ,  RONARUDO UEIN NUUNISHIYU ,  SHIYARON RUIIZU NUUNISHIYU ,  JIYUURII ROSUTEISURAFU PARASHI ,  RATSUSERU JIYOZEFU SERIINO

    IPC: G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  G03F7/36 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE: To enable a dry development by constituting a composition from a mixture of a polymer epoxide material containing a glycide group, di- or polyfunctional organosilicon material and a specified amount of an onium salt. CONSTITUTION: This composition is composed of the polymer epoxide material containing the glycide group, the di- or polyfunctional organosilicon material and the onium salt in an effective amount for starting a cross-linking reaction of the organosilicon and the polymer epoxide material. In this case, the onium salt is incorporated, for example, by the amount of increasing the sensitivity of the composition to deep UV radiation. The polymer epoxide material is selected from the group of an epoxide novolak having an average structural formula expressed by formulae I and II. Also an reactive group selected from the group consisting of the epoxy group and an active hydrogen group is incorporated in the organosilicon material. In this way, the dry development is enabled and the composition is suitable for an image forming with an all optical lithographic means.

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