公开(公告)号：JPH05224421A

公开(公告)日：1993-09-03

申请号：JP20784792

申请日：1992-08-04

Applicant: IBM

Inventor： EDOWAADO DAAKO BAABIKU ,  AIRIIN AN GARIGAN ,  JIEFURII DONARUDO JIEROOMU ,  RICHIYAADO PIITAA MAKUGAUEI ,  SHIYARON RUIIZU NUUNISHIYU ,  JIYUURII ROSUTEISURAFU PARASHI ,  RATSUSERU JIYOZEFU SERIINO ,  DEIBITSUDO FURANKU UITSUTOMAN

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To obtain a photoresist composition capable of being made an image by the exposure to an actinic radiation and being developed in a water based basic composition. CONSTITUTION: The photoresist composition contains a polymer selected from the group composed of novolak polymer, poly(p-biphenyl phenol) and the mixture, a 2- or polyfunctional organic metallic material containing a functional group capable of reacting with amino group and selected from a group composed of organosilicon, organo-tin and organo-germanium and the mixture, an amino group-containing polymer having the effective quantity of a usable reactive amino group to cross-linking and the novolak polymer or poly(p-vinyl phenol) and the effective quantity of a cationic photocatalyst to initiate the cross-linking of the organic metallic material and the amino group-containing polymer. The composition can contain a sensitizing agent material for making the composition photosensitive to near UV radiation.

公开(公告)号：JPH05100425A

公开(公告)日：1993-04-23

申请号：JP7064192

申请日：1992-03-27

Applicant: IBM

Inventor： EDOWAADO DAAKO BAABIKU ,  JIEFURII DONARUDO JIEROOMU ,  RONARUDO UEIN NUUNISHIYU ,  SHIYARON RUIIZU NUUNISHIYU ,  JIYUURII ROSUTEISURAFU PARASHI ,  RATSUSERU JIYOZEFU SERIINO

IPC: G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  G03F7/36 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To enable a dry development by constituting a composition from a mixture of a polymer epoxide material containing a glycide group, di- or polyfunctional organosilicon material and a specified amount of an onium salt. CONSTITUTION: This composition is composed of the polymer epoxide material containing the glycide group, the di- or polyfunctional organosilicon material and the onium salt in an effective amount for starting a cross-linking reaction of the organosilicon and the polymer epoxide material. In this case, the onium salt is incorporated, for example, by the amount of increasing the sensitivity of the composition to deep UV radiation. The polymer epoxide material is selected from the group of an epoxide novolak having an average structural formula expressed by formulae I and II. Also an reactive group selected from the group consisting of the epoxy group and an active hydrogen group is incorporated in the organosilicon material. In this way, the dry development is enabled and the composition is suitable for an image forming with an all optical lithographic means.