公开(公告)号：US3520784A

公开(公告)日：1970-07-14

申请号：US3520784D

申请日：1968-06-17

Applicant: IBM

Inventor： ALBERTS GENE S ,  BROWNLOW JAMES M ,  GREBE KURT R

IPC: C25D3/38 ,  C25D3/56 ,  H01F10/06 ,  C23F17/00 ,  B23P3/00

CPC classification number: H01F10/06 ,  C25D3/38 ,  C25D3/56

公开(公告)号：US3622469A

公开(公告)日：1971-11-23

申请号：US3622469D

申请日：1968-07-10

Applicant: IBM

Inventor： ALBERTS GENE S ,  BROWNLOW JAMES M

IPC: C25D3/56 ,  C25D5/18 ,  H01F10/06 ,  C23B5/48 ,  C23B5/32 ,  C23B5/34

CPC classification number: C25D5/18 ,  C25D3/562 ,  H01F10/06

Abstract: An improved method of edge-plating large coupled film memories is disclosed. The improvement resides in the edge-plating step in which an etched coupled film device is immersed in a nickel-iron or nickel-iron-copper plating bath comprising K2CO3 0.0 moles to 0.00362 moles; NaK tartrate 0.0248 moles to 0.0532 moles; NiCl2. 6H2O 0.084 moles to 0.211 moles; FeSO4.7H2O 0.0054 moles to 0.0211 moles; CuSO4.5H2O 0.0006 moles to 0.002 moles; saccharin as a 10 percent solution 0.10 g. to 0.06 g.; H2O to make 1 liter; and having a pH of from 3.9 to 5.8. The magnetic edge film is plated by a pulse plating technique in which the current pulses have a duration of about 6 seconds, the solution is stirred for about 4 seconds and the pulse remains off for about 24 seconds before starting the next current pulse.

公开(公告)号：US3647643A

公开(公告)日：1972-03-07

申请号：US3647643D

申请日：1969-09-29

Applicant: IBM

Inventor： ALBERTS GENE S ,  FLUR BARRY L

IPC: G11C11/14 ,  H01F10/06 ,  H01F41/20 ,  H01F41/32 ,  C23B5/46 ,  C23B5/48 ,  G11B5/00

CPC classification number: H01F41/32 ,  H01F10/06

Abstract: MULTILAYER MAGNETIC FILM DEVICES ARE PREPARED IN WHICH A FIRST MAGNETIC FILM IS VACUUM DEPOSITED, AND A SECOND MAGNETIC FILM IS ELECTROPLATED. THE FIRST MAGNETIC FILM IS VACUUM EVAPORATED ON A SUITABLE SUBSTRATE, SUCH AS SILICON MONOXIDE-COATED OR POLYIMIDE-COATED METAL. AN ELECTRICALLY CONTINUOUS COPPER LAYER IS VACUUM EVAPORATED ON THE FIRST MAGNETIC FILM. AN ADDITIONAL THICKNESS OF COPPER IS ELECTROPLATED ON THE ELECTRICALLY CONTINUOUS COPPER LAYER. A SECOND MAGNETIC FILM IS THEN ELECTROPLATED ON THE ADDITIONAL THICKNESS OF COPPER. THE LAYER SO DEPOSITED MAY THEN BE ETCHED INTO ANY ARRAY OF MAGNETIC FILM DEVICES IN A SINGLE STEP ETCHING PROCESS, USING A SUITABLE ETCHANT FOR BOTH THE MAGNETIC FILMS AND THE COPPER, SUCH AS FERRIC CHLORIDE IN THE CASE OF NICKEL-IRON MAGNETIC FILMS. SINGLE

STEP ETCHING RESULTS IN BETTER DEFINITION, ALLOWING SUBSTANTIALLY GREATER DENSITY OF INDIVIDUAL STORAGE LOCATIONS IN A MEMORY EMPLOYING THE MAGNETIC FILM DEVICES.

公开(公告)号：CA955508A

公开(公告)日：1974-10-01

申请号：CA145357

申请日：1972-06-22

Applicant: IBM

Inventor： ALBERTS GENE S

IPC: G03F7/00 ,  G03F7/42 ,  H01L21/311 ,  H01L23/522

公开(公告)号：FR2286505A1

公开(公告)日：1976-04-23

申请号：FR7525150

申请日：1975-08-07

Applicant: IBM

Inventor： ALBERTS GENE S ,  FARRAR PAUL A ,  HALLEN ROBERT L

IPC: G11C17/00 ,  G11C11/24 ,  G11C11/404 ,  H01L21/00 ,  H01L23/29 ,  H01L23/525 ,  H01L27/10 ,  H01L21/88 ,  H01L21/72

Abstract: Disclosed is an improved method for manufacturing semiconductor integrated circuitry whereby interconnection pad limiting metallurgy and read only fusible link memory structure is simultaneously formed by first blank depositing a composite metal film followed by in situ forming pad metallurgy and said read only link structure utilizing photoresist and etch techniques. Said read only memory link structure is utilized for directing the use of redundant lines in place of defective array bits.

公开(公告)号：CA871946A

公开(公告)日：1971-05-25

申请号：CA871946D

Applicant: IBM

Inventor： BROWNLOW JAMES M ,  ALBERTS GENE S