公开(公告)号：US3542550A

公开(公告)日：1970-11-24

申请号：US3542550D

申请日：1966-09-30

Applicant: IBM

Inventor： CONRAD ERNEST E ,  ESCH RONALD P ,  HALLEN ROBERT L ,  LEONARD RICHARD A ,  PLISKIN WILLIAM A

IPC: H01L21/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/485 ,  G03C5/00 ,  H05K3/28

CPC classification number: H01L23/3157 ,  H01L21/00 ,  H01L23/291 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/95 ,  H01L2924/00

公开(公告)号：US3369990A

公开(公告)日：1968-02-20

申请号：US42266764

申请日：1964-12-31

Applicant: IBM

Inventor： HALLEN ROBERT L ,  VALLETTA ROBERT M

IPC: C23C14/34 ,  C23C14/35 ,  C23F4/00 ,  H01J37/34

CPC classification number: C23C14/345 ,  C23C14/3471 ,  C23C14/35 ,  C23F4/00 ,  H01J37/34

公开(公告)号：US3330752A

公开(公告)日：1967-07-11

申请号：US42267764

申请日：1964-12-31

Applicant: IBM

Inventor： HALLEN ROBERT L ,  VALLETTA ROBERT M

IPC: C23C14/35 ,  C23C14/54 ,  G01N15/08 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/541 ,  G01N15/088 ,  H01J37/3402

公开(公告)号：CA1023876A

公开(公告)日：1978-01-03

申请号：CA210639

申请日：1974-10-03

Applicant: IBM

Inventor： COOK HERBERT C ,  FARRAR PAUL A ,  HALLEN ROBERT L

IPC: H05K3/24 ,  H01B1/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/52 ,  H01L23/532 ,  H05K3/38 ,  H05K3/46

Abstract: Disclosed is a method for the manufacture of composite thin films useful among other applications as electronic microcircuit interconnections, fuses, and contacts, terminal pads and voltage distribution ring metallurgy comprising in carrying out an integral circuit fabrication process the steps of first depositing a barrier layer of antidiffusion material, such as chromium, followed by superimposing thereon a film of highly conductive metals susceptible to corrosion and followed by the deposition of a highly corrosive resistant metal film. A subtractive etch pattern is formed in the composite metal film followed by heating the structure to an elevated temperature for a predetermined period of time so that the uppermost layer of the composite flows by diffusion over the edge section to protect the conductive metal film from corrosive effects.

公开(公告)号：FR2286505A1

公开(公告)日：1976-04-23

申请号：FR7525150

申请日：1975-08-07

Applicant: IBM

Inventor： ALBERTS GENE S ,  FARRAR PAUL A ,  HALLEN ROBERT L

IPC: G11C17/00 ,  G11C11/24 ,  G11C11/404 ,  H01L21/00 ,  H01L23/29 ,  H01L23/525 ,  H01L27/10 ,  H01L21/88 ,  H01L21/72

Abstract: Disclosed is an improved method for manufacturing semiconductor integrated circuitry whereby interconnection pad limiting metallurgy and read only fusible link memory structure is simultaneously formed by first blank depositing a composite metal film followed by in situ forming pad metallurgy and said read only link structure utilizing photoresist and etch techniques. Said read only memory link structure is utilized for directing the use of redundant lines in place of defective array bits.