公开(公告)号：JPH11150115A

公开(公告)日：1999-06-02

申请号：JP23172998

申请日：1998-08-18

Applicant: IBM

Inventor： CATHERINA E BEIVICH ,  BRUNNER TIMOTHY A ,  ALESSANDRO CAESAR CALEGARI ,  ALFRED GRILL ,  CHRISTOPHER V JARNES ,  BISHUNABAI VITTARUBAI PATEL

IPC: C01B31/00 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To form a resist which has superior optical purity and high adjustability and consists of a plurality of layers by forming an antireflection film on a substrate through vapor deposition. SOLUTION: After an amorphous carbon film a-C:X:H containing hydrogen and fluoride is stuck to a substrate by plasma-intensified chemical gaseous-phase vapor deposition, a photoresist PR containing silicon is applied to the surface of the carbon film a-C:X:H with a spin coater and baked. Then, after the photoresist PR has been developed with a developing solution, the carbon film a-C:X:H is subjected to reactive ion etching in oxygen plasma. As a result, the carbon film a-C:X:H functions as an ideal thick planarized lower antireflection film in a two-layer resist system for ultraviolet and far-infrared rays and can improve line width control and the performance of an integrated circuit.