公开(公告)号：JP2001351976A

公开(公告)日：2001-12-21

申请号：JP2001117668

申请日：2001-04-17

Applicant: IBM

Inventor： DALTON TIMOTHY J ,  CHRISTOPHER V JARNES ,  JOYCE C RYUU ,  PURUSHOTHAMAN SAMPATH

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a permanent protection hard mask for protecting the dielectric characteristics of a main dielectric layer that has undesired low permittivity of a semiconductor device due to undesired increase in permittivity, undesired increase in current leakage, and a low device yield caused by surface scratch, when a continuous treatment processing is conducted. SOLUTION: This protection hard mask has a one- or two-layer sacrificial hard mask that is especially effective, when interconnection structure such as a via opening and/or a line is formed between low-permittivity materials, while a final product is manufacture. The sacrificial and permanent hard masks are formed of the same precursor substance in a single process, where process conditions are changed for giving a film having different permittivity. Most preferably, dual damascene structure has three-layer hard masks 40, 50, and 60 that are formed on the inter-level dielectric with bulk low permittivity, before the interconnection structure of the inter-level dielectric is formed.

公开(公告)号：JPH11150115A

公开(公告)日：1999-06-02

申请号：JP23172998

申请日：1998-08-18

Applicant: IBM

Inventor： CATHERINA E BEIVICH ,  BRUNNER TIMOTHY A ,  ALESSANDRO CAESAR CALEGARI ,  ALFRED GRILL ,  CHRISTOPHER V JARNES ,  BISHUNABAI VITTARUBAI PATEL

IPC: C01B31/00 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To form a resist which has superior optical purity and high adjustability and consists of a plurality of layers by forming an antireflection film on a substrate through vapor deposition. SOLUTION: After an amorphous carbon film a-C:X:H containing hydrogen and fluoride is stuck to a substrate by plasma-intensified chemical gaseous-phase vapor deposition, a photoresist PR containing silicon is applied to the surface of the carbon film a-C:X:H with a spin coater and baked. Then, after the photoresist PR has been developed with a developing solution, the carbon film a-C:X:H is subjected to reactive ion etching in oxygen plasma. As a result, the carbon film a-C:X:H functions as an ideal thick planarized lower antireflection film in a two-layer resist system for ultraviolet and far-infrared rays and can improve line width control and the performance of an integrated circuit.

公开(公告)号：JP2003249137A

公开(公告)日：2003-09-05

申请号：JP2002330991

申请日：2002-11-14

Applicant: IBM

Inventor： GREENBERG DAVID R ,  DELIGIANNI HARIKLIA ,  ROBERT A GROVES ,  CHRISTOPHER V JARNES ,  LUND JENNIFER L ,  CATHERINE L SAENGER ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H1/24 ,  H01H1/26 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a fine electric mechanical switch having a restoring force large enough to overcome static friction. SOLUTION: This fine electric mechanical switch comprises a conductive beam 10 capable of being warped, and a plurality of electrodes which are covered with elastically deformable conductive layers 11. At first, a restoring force is generated by a single spring constant k0 of the beam 10 by applying a control voltage between the beam 10 capable of being warped and a control electrode 12 which is flush with a switch electrode 13. Then, when the fine electric mechanical switch is approached to the closed state and the conductive layers 11 are compressed, restoring forces due to additional spring constants, k1,..., kn of the plurality of deformable conductive layers 11 are sequentially added to the restoring force due to the spring constant k0 of the beam 10. In another embodiment, deformable spring-like elements are used in place of the deformable layers. Furthermore in the other embodiment, compressible layers or the deformable spring-like elements are mounted on the warping beam which is opposed to the switch electrode. COPYRIGHT: (C)2003,JPO